SEC irf630
Abstract: IRF630 SEC irf630 datasheet CIRF630 irf630 IRF630 p 4.5V to 100V input regulator 4.5V TO 100V INPUT REGULATORS
Text: IRF630 ! POWER MOSFET GENERAL DESCRIPTION FEATURES This Power MOSFET is designed for low voltage, high Dynamic dv/dt Rating speed power switching applications such as switching Repetitive Avalanche Rated regulators, converters, solenoid and relay drivers.
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IRF630
O-220
IRF630.
SEC irf630
IRF630 SEC
irf630 datasheet
CIRF630
irf630
IRF630 p
4.5V to 100V input regulator
4.5V TO 100V INPUT REGULATORS
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irf630
Abstract: mosfet irf630
Text: DC COMPONENTS CO., LTD. IRF630 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF N-CHANNEL POWER MOSFET VDSS = 200 Volts RDS ON = 0.4 Ohm ID = 9.0 Amperes Features * Repetitive Avalanche Rated * Fast Switching * Ease of Paralleling * Simple Drive Requirements
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IRF630
O-220AB
irf630
mosfet irf630
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
O-220
O-220
12-Mar-07
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IRF630
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630
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IRF630pbf
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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PDF
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
IRF630pbf
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Untitled
Abstract: No abstract text available
Text: <zz>£tni-C.onauctoi J loaucti, L/nc, LJ TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. N-Channel MOSFET Transistor IRF630 0(2) DESCRIPTION • Drain Current -ID=9A@ TC=25°C • Drain Source Voltage-
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IRF630
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IRF630 MOSFET driver
Abstract: SiHF630 irf630 IRF630PBF SiHF630-E3 IRF630 p
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
O-220
O-220
18-Jul-08
IRF630 MOSFET driver
irf630
IRF630PBF
SiHF630-E3
IRF630 p
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IRF630PBF
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
11-Mar-11
IRF630PBF
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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PDF
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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PDF
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IRF630,
SiHF630
2002/95/EC
O-220AB
2011/65/EU
2002/95/EC.
2002/95/EC
2011/65/EU.
12-Mar-12
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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PDF
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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Untitled
Abstract: No abstract text available
Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements
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Original
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PDF
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IRF630,
SiHF630
2002/95/EC
O-220AB
2002/95/EC.
2002/95/EC
2011/65/EU.
JS709A
02-Oct-12
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irf630
Abstract: rf1s630sm9a IRF630 Fairchild
Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power
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IRF630,
RF1S630SM
IRF63
O220AB
O263AB
RF1S630SM
irf630
rf1s630sm9a
IRF630 Fairchild
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TA17412
Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode
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IRF630,
RF1S630SM
TA17412.
1578f
TA17412
irf630
irf630 equivalent
IRF632
RF1S630SM
RF1S630SM9A
TB334
IRF630 p
IRF630 INTERSIL
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Untitled
Abstract: No abstract text available
Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed
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M1910B/C
M1910B/C
M1910C
IRF840
10uH/1A
1N5819
M1910C
500mA
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ac dc led constant current driver
Abstract: No abstract text available
Text: 一華半導體股份有限公司 LED DRIVER MOSDESIGN SEMICONDUCTOR CORP. M1910B/C HIGH BRIGHTNESS LED DRIVER GENERAL DESCRIPTION The M1910B/C is a PWM high-efficiency LED driver control IC. It allows efficient operation of High Brightness HB LEDs. The M1910B/C controls an external MOSFET at fixed switching frequency up to 300 kHz. The frequency can be programmed
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M1910B/C
M1910B/C
M1910C
500mA
015X45
ac dc led constant current driver
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Untitled
Abstract: No abstract text available
Text: BACK HV91 Series Application Note AN-H21 Calculating Power Dissipation and Supply Current in HV91 Series Parts Part I The internal circuitry of the HV9110/11/12/13/14 and HV9120/23 uses very little current by itself—generally less than 1mA. However, when driving a large MOSFET very fast, considerable
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AN-H21
HV9110/11/12/13/14
HV9120/23
IRF630
750KHz.
IRF630,
10-9F
000Hz
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rf630
Abstract: IRF630 IRF632 OT391 IRF631 IRF633 j01 relay
Text: Ql DE I 3 f l 7 5 G f l l 3 8 75081 G E S O L I D S T A T E D O l ö B S¡14 D r 0 1 E 18354 dT^ 37~ / / - Standard Power MOSFETs IRF630, IRF631, IRF632, IRF633 File Number 1578 Power MOS Field-Effect Transistors N -CH A N N EL E N H A N C EM E N T M O D E
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3fl75Dfll
IRF630,
IRF631,
IRF632,
IRF633
50V-200V
IRF632
IRF633
rf630
IRF630
OT391
IRF631
j01 relay
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MOSFET IRF 630
Abstract: IRF630 f630 IRF630R 633R
Text: S H A R R IS IR F 630/631/632/633 IRF630R/631R/632R/633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Features Package T 0 -2 2 0 A B TOP VIEW • 8.0A and 9.0A , 150 V - 2 0 0 V • r 0 s ° n = 0 .4 Î Î and 0 .6 Î Î • Single Puise A valanche Energy R ated*
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IRF630R/631R/632R/633R
IRF630,
IRF631,
IRF632,
IRF633
IRF630R,
IRF631R,
IRF632R
IRF633R
MOSFET IRF 630
IRF630
f630
IRF630R
633R
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irf 4110
Abstract: for IRF630 1RF631 IRF6322 MOTOROLA IRF630 MTM8N20 IRF630 IRF631 irf 1962 SS-AT9
Text: MOTOROLA SC X S T R S /R F IME D II b3fej?554 0 0 0 ^ ^ 3 3 MOTOROLA I • SEMICONDUCTOR TECHNICAL DATA IRF630 IRF631 IRF632 P o w e r Field E ffe c t T ran sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Power FETs are designed fo r low
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IRF630
IRF631
IRF632
IRF630,
IRF632
irf 4110
for IRF630
1RF631
IRF6322
MOTOROLA IRF630
MTM8N20
irf 1962
SS-AT9
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IRF630 MOTOR CONTROL CIRCUIT
Abstract: H11L MOS-Gated Thyristor GE h11l1 IRF630 Transistor
Text: Application Notes Common-Drain Power-MOSFET Gate-Drive Solutions Using the H11N/L Optoisolators Introduction Power-MOSFET devices in the ha lf-brid ge con figura tion, Fig. 1, are becom ing popular fo r both sw itching-pow ersuppliesandP W M pulse-w idth-m odulated m otor controls.
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H11N/L
92Cs-«
IRF630 MOTOR CONTROL CIRCUIT
H11L
MOS-Gated Thyristor
GE h11l1
IRF630 Transistor
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Untitled
Abstract: No abstract text available
Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a
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PDF
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IRF630,
RF1S630SM
400i2
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1RF630
Abstract: No abstract text available
Text: 43 0 2 2 7 1 0054053 0L.5 • HAS HARRIS ÈRF630/631/632/633 IR F630R /631R /632R /633R N-Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -22 0A B TOP VIEW • 8.0A and 9.0A, 150V - 200V • n a s io n = and ° - 6 fi • Single Pulse Avalanche Energy Rated*
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RF630/631/632/633
F630R
/631R
/632R
/633R
IRF630,
IRF631,
IRF632,
IRF633
IRF630R,
1RF630
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