RF1S630SM9A Search Results

RF1S630SM9A Price and Stock

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Rochester Electronics LLC RF1S630SM9A N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RF1S630SM9A	Bulk			278	1 - 10 - 100 - 1000 $1.08 10000 $1.08	Buy Now
Harris Semiconductor RF1S630SM9A 9A, 200V, 0.400 OHM, N-Channel POWER MOSFET '
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Rochester Electronics	RF1S630SM9A		4,000		1	1 $1.04 10 $1.04 100 $0.9776 1000 $0.884 10000 $0.884	Buy Now

RF1S630SM9A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
RF1S630SM9A		Fairchild Semiconductor	9A, 200V, 0.400 Ohm, N-Channel Power MOSFET		Original	PDF
RF1S630SM9A		Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.		Historical	PDF

RF1S630SM9A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TA17412 Abstract: irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRF630, RF1S630SM TA17412. 1578f TA17412 irf630 irf630 equivalent IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 p IRF630 INTERSIL
irf630 Abstract: rf1s630sm9a IRF630 Fairchild Text: IRF630, RF1S630SM Data Sheet [ /Title IRF63 0, RF1S6 30SM /Subject (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (9A, 200V, 0.400 Ohm, NChannel Power MOSFETs, Intersil Corporation, TO220AB , TO263AB June 1999 9A, 200V, 0.400 Ohm, N-Channel Power	Original	PDF	IRF630, RF1S630SM IRF63 O220AB O263AB RF1S630SM irf630 rf1s630sm9a IRF630 Fairchild
IRF632 datasheet Abstract: IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild Text: IRF630, RF1S630SM Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode	Original	PDF	IRF630, RF1S630SM TA17412. IRF632 datasheet IRF630 datasheet IRF630 IRF632 RF1S630SM RF1S630SM9A TB334 IRF630 mosfet IRF630 Fairchild
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Untitled Abstract: No abstract text available Text: IRF630, RF1S630SM Semiconductor June 1999 Data Sheet 9A, 200V, 0.400 Ohm, N-Channel Power MOSFETs These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a	OCR Scan	PDF	IRF630, RF1S630SM 400i2