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    Vishay Siliconix SIHF630STRL-GE3

    SIHF630STRL-GE3 N-channel MOSFET Transistor, 9 A, 200 V, 3-Pin D2PAK | Siliconix / Vishay SIHF630STRL-GE3
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    SIHF630 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 O-220 O-220 12-Mar-07

    IRF630PBF

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 11-Mar-11 IRF630PBF

    IRF630

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF630

    IRF630pbf

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF630pbf

    Untitled

    Abstract: No abstract text available
    Text: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF630S SiHF630S AN609, 8742m 0026m 8165m 3067m 9761m

    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 18-Jul-08

    sihf630s

    Abstract: SMD diode NC
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


    Original     		PDF IRF630S, SiHF630S SMD-220 12-Mar-07 SMD diode NC

    AN609

    Abstract: IRF630 SiHF630
    Text: IRF630_RC, SiHF630_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF630 SiHF630 AN609, 09-Mar-10 AN609

    smd e3a

    Abstract: IRF630S SiHF630S SiHF630S-E3 SMD-220 IRF630STRLPBF
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


    Original     		PDF IRF630S, SiHF630S SMD-220 SMD-220 18-Jul-08 smd e3a IRF630S SiHF630S-E3 IRF630STRLPBF

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF630STRLPBF

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 IRF630STRLPBF

    AN609

    Abstract: IRF630S SiHF630S
    Text: IRF630S_RC, SiHF630S_RC Vishay Siliconix R-C Thermal Model Parameters DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. R-C values for the electrical circuit in the Foster/tank and Cauer/filter configurations are included. When implemented in P-SPICE,


    Original     		PDF IRF630S SiHF630S AN609, 12-Mar-10 AN609

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    IRF630S

    Abstract: SiHF630S SiHF630S-E3 SiHF630S-GE3
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Halogen-free According to IEC 61249-2-21 Definition • Surface Mount • Available in Tape and Reel • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Fast Switching


    Original     		PDF IRF630S, SiHF630S 2002/95/EC O-263) 11-Mar-11 IRF630S SiHF630S-E3 SiHF630S-GE3

    IRF630 MOSFET driver

    Abstract: SiHF630 irf630 IRF630PBF SiHF630-E3 IRF630 p
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) (Ω) VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 O-220 O-220 18-Jul-08 IRF630 MOSFET driver irf630 IRF630PBF SiHF630-E3 IRF630 p

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: IRF630, SiHF630 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Dynamic dV/dt Rating 200 RDS(on) () VGS = 10 V • Repetitive Avalanche Rated 0.40 Qg (Max.) (nC) 43 • Fast Switching Qgs (nC) 7.0 • Ease of Paralleling 23 • Simple Drive Requirements


    Original     		PDF IRF630, SiHF630 2002/95/EC O-220AB 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: IRF630S, SiHF630S Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS V • Surface Mount 200 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 43 • Dynamic dV/dt Rating Qgs (nC) 7.0 • Repetitive Avalanche Rated 23 • Fast Switching Qgd (nC) Configuration


    Original     		PDF IRF630S, SiHF630S SMD-220 18-Jul-08

    ca3103

    Abstract: 2n2222 -331 Cd4093 SiHF
    Text: VISHAY SILICONIX Power MOSFETs Application Note AN-937 Gate Drive Characteristics and Requirements for Power MOSFETs TABLE OF CONTENTS Page Gate Drive vs. Base Drive . 2


    Original     		PDF AN-937 ca3103 2n2222 -331 Cd4093 SiHF