CMA31
Abstract: Linear Image sensor IC for CIS HV7131X Color CIS line sensor H1A424M167
Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.01 Author Doowon Choi IT Application Team System IC SBU Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date
|
Original
|
PDF
|
H1A424M167
HV7121X)
CMA31
Linear Image sensor IC for CIS
HV7131X
Color CIS line sensor
H1A424M167
|
hyundai
Abstract: CMA31 hyundai 235 flicker automatic exposure gain multiple 176X144 320X240 640X480 H1A424M167 HV7131B high frequency linear cmos IMAGE SENSOR
Text: H1A424M167 Image Signal Processor for Hyundai CMOS Image Sensor Data Sheet Version 1.0 Electronics Industries Co., Ltd Hyundai Electronics Industries Co., Ltd. H1A424M167 REVISION HISTORY Revision Issue Date Comments 0.45 April 28, 1999 Draft 0.9 June 15, 1999
|
Original
|
PDF
|
H1A424M167
HV7121X)
hyundai
CMA31
hyundai 235
flicker automatic exposure gain multiple
176X144
320X240
640X480
H1A424M167
HV7131B
high frequency linear cmos IMAGE SENSOR
|
dn729
Abstract: P2254 P22154 P22264 P22328 P2252
Text: RELIABILITY MONITOR DS1210S JAN '98 MONITOR-HYUNDAI DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1210 C1 9750 DN738347AAA 16 PIN SOIC HYUNDAI-KOREA HEI PROCESS Single Poly, Single Metal 3.0 µm POCL3 reFlow (3um only); FLASH E2PROM (all other tech. numbers)
|
Original
|
PDF
|
DS1210S
DS1210
DN738347AAA
P21776
P22233
P22310
P22312
P22230
P22309
P22311
dn729
P2254
P22154
P22264
P22328
P2252
|
OSD 9616
Abstract: SERVICE MANUAL tv hyundai data transistor horisontal tv GMS800 GMS81C4040 GMS87C4060 icar capacitor bpl color tv circuit diagram
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team [email protected] [email protected] 2000 HYUNDAI Micro Electronics All right reserved.
|
Original
|
PDF
|
GMS87C4060
GMS81C4040
OSD 9616
SERVICE MANUAL tv hyundai
data transistor horisontal tv
GMS800
GMS81C4040
GMS87C4060
icar capacitor
bpl color tv circuit diagram
|
SERVICE MANUAL tv hyundai
Abstract: OSD 9616 1207H
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team [email protected] [email protected] 2000 HYUNDAI Micro Electronics All right reserved.
|
Original
|
PDF
|
GMS87C4060
GMS81C4040
SERVICE MANUAL tv hyundai
OSD 9616
1207H
|
SERVICE MANUAL tv hyundai
Abstract: television service manual hyundai data transistor horisontal tv YSS 928 icar capacitor OSD 9616 tv hyundai GMS81C4040 Hyundai HD 170 intel 27010 eprom
Text: 8-BIT SINGLE-CHIP MICROCONTROLLERS GMS87C4060 GMS81C4040 User’s Manual MicroElectronics Semiconductor Group of Hyundai Electronics Industrial Co., Ltd. Version 1.00 Published by MCU Application Team [email protected] [email protected] 2000 HYUNDAI Micro Electronics All right reserved.
|
Original
|
PDF
|
GMS87C4060
GMS81C4040
SERVICE MANUAL tv hyundai
television service manual hyundai
data transistor horisontal tv
YSS 928
icar capacitor
OSD 9616
tv hyundai
GMS81C4040
Hyundai HD 170
intel 27010 eprom
|
GMS87C1202
Abstract: GMS800 GMS87C1102 GMS87C1102E GMS87C1202E
Text: HYUNDAI MicroElectronics GMS87C1102 / GMS87C1202 GMS87C1102 / GMS87C1202 CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER 1. OVERVIEW 1.1 Description The GMS87C1102 and GMS87C1202 are an advanced CMOS 8-bit microcontroller with 2K bytes of ROM. The HYUNDAI MicroElectronics GMS87C1102 and GMS87C1202 are a powerful microcontroller which provides a highly flexible and cost
|
Original
|
PDF
|
GMS87C1102
GMS87C1202
GMS87C1202
GMS800
GMS87C1102E
GMS87C1202E
|
GMS87C1202
Abstract: RC01 c3h01
Text: HYUNDAI MicroElectronics GMS87C1102 / GMS87C1202 GMS87C1102 / GMS87C1202 CMOS SINGLE-CHIP 8-BIT MICROCONTROLLER 1. OVERVIEW 1.1 Description The GMS87C1102 and GMS87C1202 are an advanced CMOS 8-bit microcontroller with 2K bytes of ROM. The HYUNDAI MicroElectronics GMS87C1102 and GMS87C1202 are a powerful microcontroller which provides a highly flexible and cost
|
Original
|
PDF
|
GMS87C1102
GMS87C1202
GMS87C1202
RC01
c3h01
|
arm piccolo
Abstract: GMS30C7201 SERVICE MANUAL tv hyundai GMS30C USB 2.0 SD card reader 1999 scr tic 106 The ARM7TDMI Debug Architecture piccolo ATC 1084 carrier detect phase shift key hyundai L19 2
Text: GMS30C7201 Data Sheet Issued: December 1998 Copyright Advanced RISC Machines Ltd ARM 1998 Copyright HYUNDAI MicroElectronics Co Ltd 1999 All rights reserved Preliminary Proprietary Notice HME logo are trademarks of HYUNDAI MicroElectronics Ltd. Neither the whole nor any part of the information contained in, or the product described in, this document may be adapted or
|
Original
|
PDF
|
GMS30C7201
GMS30C7201
arm piccolo
SERVICE MANUAL tv hyundai
GMS30C
USB 2.0 SD card reader 1999
scr tic 106
The ARM7TDMI Debug Architecture piccolo
ATC 1084
carrier detect phase shift key
hyundai L19 2
|
hyundai eon wiring diagram
Abstract: SV1 3100 B 14 BITS HM11S110 3570 1201 hyundai 290 electronic circuit diagram aon 2850
Text: HM11S110 H M11S110 65 COM/ 132 SEG STN LCD DRIVER & CONTROLLER Preliminary FEB, 2000 Hyundai Electronics Industries System IC SBU 1 Preliminary HM11S110 CONTENTS INTRODUCTION FEATURES BLOCK DIAGRAM PAD CONFIGURATION PIN DESCRIPTION FUCTION DESCRIPTION INSTRUCTION DESCRIPTION
|
Original
|
PDF
|
HM11S110
M11S110
HM11S110
hyundai eon wiring diagram
SV1 3100 B 14 BITS
3570 1201
hyundai 290 electronic circuit diagram
aon 2850
|
DS2107A
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jul-97 9706 A6 HYUNDAI DL643858AAB 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
|
Original
|
PDF
|
DS2107A
Jul-97
DL643858AAB
P-20056
P-20077
P-20078,
P-20107
P-20108
DS2107A
|
Untitled
Abstract: No abstract text available
Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220B
32Bit
HY57V653220B
864-bit
288x32.
11/Dec
400mil
|
Untitled
Abstract: No abstract text available
Text: HY57V643220C 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V6V3220C is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V643220C is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V643220C
32Bit
HY57V6V3220C
864-bit
HY57V643220C
288x32.
400mil
86pin
|
Untitled
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Jan-97 9639 A6 HYUNDAI DL611233ACA1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
|
Original
|
PDF
|
Jan-97
P-18944
P-18964
P-18965,
P-19008
P-19009
P-19010
C/100%
P-19011
DL611233ACA1
|
|
|
DS2107A
Abstract: DL643857AAA1
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS2107A Apr-97 9708 A6 HYUNDAI DL643857AAA1 1.2µ NITRIDE 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
|
Original
|
PDF
|
DS2107A
Apr-97
DL643857AAA1
P-19648
P-19689
P-19690,
P-19742
P-19743
DS2107A
DL643857AAA1
|
74 HTC 192
Abstract: DS2165Q
Text: RELIABILITY MONITOR DS1000M-100 JAN '99 MONITOR-HYUNDAI,CHINA DEVICE REVISION DATE CODE LOT NUMBER PINS PACKAGE WIDTH ASSEMBLY SITE DS1000 E3 DIP 300 CPS China 9847 PROCESS Single Poly, Single Metal DH833179ADA 8 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60%
|
Original
|
PDF
|
DS1000M-100
DS1000
DH833179ADA
HOUR99
DS87C520
DN825394AAB
J-STD-020
30C/60%
74 HTC 192
DS2165Q
|
Untitled
Abstract: No abstract text available
Text: HY57V653220B 4 Banks x 512K x 32Bit Synchronous DRAM Preliminary DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220B
32Bit
HY57V653220B
864-bit
288x32.
400mil
86pin
|
DS87520
Abstract: P2305 P23855
Text: RELIABILITY MONITOR DS1000M-100 JAN '99 MONITOR-HYUNDAI,CHINA DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1000 E3 DH833179ADA 8 PIN PDIP CHIPPAC, CHINA CPS 9847 PROCESS Single Poly, Single Metal 1.2 µm Standard Process JOB NO DESCRIPT Cf: 60%
|
Original
|
PDF
|
DS1000M-100
DS1000
DH833179ADA
P23057
P23178
DN825394AAB
P23415
P23306
P23307
J-STD-020
DS87520
P2305
P23855
|
DS87520
Abstract: dm8304 P2271 DS2165Q
Text: RELIABILITY MONITOR DS1232L OCT '98 MONITOR-HYUNDAI,KOREA DEVICE REVISION DATE CODE LOT NUMBER PACKAGE ASSEMBLY SITE DS1232L C1 DL817678ABB 8 PIN SOIC CHIPPAC, KOREA 9830 PROCESS Single Poly, Single Metal 0.8 µm Standard Process JOB NO DESCRIPT Cf: 60% Ea: 0.7
|
Original
|
PDF
|
DS1232L
DL817678ABB
P22755
P22778
J-STD-020
DS87520
DN825394AAB
DS87C520
P23306
dm8304
P2271
DS2165Q
|
19768
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1210 Apr-97 9710 C1 HYUNDAI DL650775AAE 3.0µ OX/NI 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
|
Original
|
PDF
|
Apr-97
P-19646
P-19693
P-19694,
P-19765
P-19766
P-19767
C/100%
P-19768
DL650775AAE
19768
|
DS1210
Abstract: No abstract text available
Text: RELIABILITY MONITOR PRODUCT MONITOR DATE DATE CODE ASSEMBLY FACILITY ASSEMBLY LOT NO PROCESS TYPE PACKAGE TYPE DS1210 Apr-97 9710 C1 HYUNDAI DL650775AAE 3.0µ OX/NI 16 SOIC STRESS/JOB NO. READPOINT Sample Size/No. of Fails Preconditioning (P/C): HTC Vapor Phase
|
Original
|
PDF
|
DS1210
Apr-97
DL650775AAE
P-19646
P-19693
P-19694,
P-19765
P-19766
DS1210
|
Untitled
Abstract: No abstract text available
Text: HY57V653220C 4 Banks x 512K x 32Bit Synchronous DRAM Target Spec. DESCRIPTION The Hyundai HY57V653220B is a 67,108,864-bit CMOS Synchronous DRAM, ideally suited for the memory applications which require wide data I/O and high bandwidth. HY57V653220B is organized as 4banks of 524,288x32.
|
Original
|
PDF
|
HY57V653220C
32Bit
HY57V653220B
864-bit
288x32.
400mil
86pin
|
HY514260
Abstract: HY5118160 HY5116160 HY5117404 HY51V65400 HY511616
Text: •'HYUNDAI — • TABLE OF CONTENTS 1. TABLE OF CONTENTS Index 2. PRODUCT QUIC REFERENCE DRAM Part Numbering Ordering Information 3. DRAM DATA SHEETS 1M-bit DRAM Page HY531000A. 1M x1-bit, 5V, F P .
|
OCR Scan
|
PDF
|
HY531000A.
HY534256A.
256Kx4-bit,
HY512260.
128KX16-bit,
HY514260
HY5118160
HY5116160
HY5117404
HY51V65400
HY511616
|
Untitled
Abstract: No abstract text available
Text: HY51V4260B Series HYUNDAI 256Kx 16-bit CMOS DRAM with 2CAS DESCRIPTION The HY51V4260B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advance submicron CMOS process technology and advanced circuit design techniques to achieve
|
OCR Scan
|
PDF
|
HY51V4260B
256Kx
16-bit
400mil
40pin
40/44pin
0D04273
|