HYM536410BM Search Results

HYM536410BM Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
HY5117400B Abstract: HY514100A Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed	Original	PDF	HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin
Z0301 Abstract: No abstract text available Text: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	HYM53641 36-bit HYM536410B HY5117400 HYM536410BM/BLM HYM536410BMG/BLMG C55-BEFORE-KÃ 1CE07-00-MAY93 Z0301
HYM53641 Abstract: No abstract text available Text: •HYUNDAI SEMICONDUCTOR HYM 536410 B S e rie s 4M X 36-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM53641 OB is a 4M x 36-blt Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.	OCR Scan	PDF	36-bit HYM53641 36-blt HY5117400 HYM53641OBM/BLM HYM53641OBMG/BLMG 1CE07-00-MAY93 HYM536410B

Catalog Datasheet

MFG & Type

PDF

Document Tags

HY5117400B

Abstract: HY514100A
Text: HYM536410B M-Series 4Mx36 bit FP DRAM MODULE based on 4Mx4 DRAM, with Parity, 5V, 2K-Refresh GENERAL DESCRIPTION The HYM536410B M-Series is a 4Mx36-bit Fast Page mode CMOS DRAM module consisting of eight HY5117400B in 24/26 pin SOJ and four HY514100A in 20/26 pin SOJ on a 72 pin glass-epoxy printed

Original

PDF

HYM536410B 4Mx36 4Mx36-bit HY5117400B HY514100A HYM536410BM HYM536410BMG 72-Pin

Z0301

Abstract: No abstract text available
Text: •HYUNDAI HYM53641 OB Series SEMICONDUCTOR 4M X 36-bit CMOS DRAM MODULE PRELIMINARY DESCRIPTION The HYM536410B is a 4M x 36-bit Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. Q.22pF decoupling capacitor is mounted for each DRAM.

OCR Scan

PDF

HYM53641 36-bit HYM536410B HY5117400 HYM536410BM/BLM HYM536410BMG/BLMG C55-BEFORE-KÃ 1CE07-00-MAY93 Z0301

HYM53641

Abstract: No abstract text available
Text: •HYUNDAI SEMICONDUCTOR HYM 536410 B S e rie s 4M X 36-bit CMOS ORAM MODULE PRELIMINARY DESCRIPTION The HYM53641 OB is a 4M x 36-blt Fast page mode CMOS DRAM module consisting of nine HY5117400 in 24/28 pin SOJ on a 72 pin glass-epoxy printed circuit board. 0.22^F decoupling capacitor is mounted for each DRAM.