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    HUF7534 Price and Stock

    onsemi HUF75345S3ST

    MOSFET N-CH 55V 75A D2PAK
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    onsemi HUF75345G3

    MOSFET N-CH 55V 75A TO247-3
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    DigiKey HUF75345G3 Tube 1,569 1
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    onsemi HUF75344P3

    MOSFET N-CH 55V 75A TO220-3
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    DigiKey HUF75344P3 Tube 332 1
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    onsemi HUF75344G3

    MOSFET N-CH 55V 75A TO247-3
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    DigiKey HUF75344G3 Tube 312 1
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    onsemi HUF75343P3

    MOSFET N-CH 55V 75A TO220-3
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    HUF7534 Datasheets (78)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75343G3 Fairchild Semiconductor 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343G3 Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343G3 Harris Semiconductor 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343G3 Intersil 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343G3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75343P3 Fairchild Semiconductor 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343P3 Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343P3 Harris Semiconductor 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343P3 Intersil 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343P3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75343S3 Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343S3 Harris Semiconductor 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343S3 Toshiba Power MOSFETs Cross Reference Guide Original PDF
    HUF75343S3_NL Fairchild Semiconductor 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343S3S Fairchild Semiconductor 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343S3S Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343S3S Harris Semiconductor 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343S3S Intersil 75A, 55V, 0.009 ?, N-Channel UltraFET Power MOSFETs Original PDF
    HUF75343S3ST Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF

    HUF7534 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    75344g

    Abstract: 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet January 2000 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344g 75344P HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    75344G

    Abstract: 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2001 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344p HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST TB334

    fairchild to-220ab 75343P

    Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3S fairchild to-220ab 75343P 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334

    Untitled

    Abstract: No abstract text available
    Text: HUF75344A3 tm N-Channel UltraFET Power MOSFET 55V, 75A, 8mΩ Features Description • RDS on = 6.5mΩ ( Typ.)@ VGS = 10V, ID = 75A • • RoHS compliant This N-channel power MOSFET is produced using Fairchild Semiconductor’s innovative UItraFET process. This advanced


    Original
    PDF HUF75344A3 HUF75344A3

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Data Sheet December 2004 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S

    75343P

    Abstract: 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3S 43oducts 75343P 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S

    fairchild to-220ab 75343P

    Abstract: 75343g 75343s 75343p HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S fairchild to-220ab 75343P 75343g 75343s 75343p HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343

    Untitled

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3, HUF75344S3S Semiconductor Data Sheet March 1999 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75344G3, HUF75344P3, HUF75344S3S 32e-3 52e-2 41e-1 13e-1 83e-2 HUF75344 15e-3

    75345P

    Abstract: fairchild 45g 75345S HUF75345G3 HUF75345P3 HUF75345S3S HUF75345S3ST TA75345 TB334 75345
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet September 2000 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs Title UF7 45G UF75 5P3, UF75 5S3 bt A, V, 07 m, These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S 75345P fairchild 45g 75345S HUF75345G3 HUF75345P3 HUF75345S3S HUF75345S3ST TA75345 TB334 75345

    75344G

    Abstract: No abstract text available
    Text: HUF75344G3, HUF75344P3 Data Sheet N-Channel UltraFET Power MOSFET 55 V, 75 A, 8 mΩ These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original
    PDF HUF75344G3, HUF75344P3 HUF75344P3 75344G

    75345p fairchild

    Abstract: 75345P 75345S HUF75345G3 HUF75345P3 HUF75345S3S HUF75345S3ST TA75345 TB334
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S HUF75345 HUF75345S3S 75345p fairchild 75345P 75345S HUF75345G3 HUF75345P3 HUF75345S3ST TA75345 TB334

    IRF540 complementary

    Abstract: IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR
    Text: Sales type RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L RFP25N05 RFP14N05 HUF75344P3 HUF75344S3S HUF75345S3S HUF75345G3 HUF75343S3S HUF75307D3S HUF75344G3 HUF75345P3 HUF75343P3 HUF5343G3 HUF75321P3 HUF75329P3


    Original
    PDF RFP6N50 RFD16N03LSM RFP15N05L RFP50N05 RFP15N05 RFP50N05L RFD14N05L RFD14N05LSM RFD14N05SM RFP14N05L IRF540 complementary IRFZ44N complementary std2n52 TOSHIBA IRFZ44A datasheet STP2NA60 SSH6N80 rfp60n06 ste38na50 IRF630 complementary IRF3205 IR

    75345P

    Abstract: No abstract text available
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S 75345P

    75343p

    Abstract: 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S S E M I C O N D U C T O R 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 75A, 55V The HUF75343 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original
    PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S HUF75343 1-800-4-HARRIS 75343p 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343

    75345p

    Abstract: TA75345 75345S HUF75345G3 HUF75345P3 HUF75345S3S HUF75345S3ST TB334
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet September 2000 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S 75345p TA75345 75345S HUF75345G3 HUF75345P3 HUF75345S3S HUF75345S3ST TB334

    SSI5N60A

    Abstract: FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3
    Text: Discrete MOSFET TO-262 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-262(I2PAK) N-Channel ISL9N303AS3 30 Single 0.0032 0.005 - - 61 75 215 HUF75345S3 55 Single 0.007 -


    Original
    PDF O-262 O-262 ISL9N303AS3 HUF75345S3 HUF75333S3 FQI85N06 FQI65N06 FQI55N06 FQI50N06 FQI30N06 SSI5N60A FQI13N06 FQI20N06 FQI30N06 FQI50N06 FQI55N06 FQI65N06 FQI85N06 HUF75333S3 HUF75345S3

    75345p

    Abstract: No abstract text available
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet December 2001 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S HUF75345S3 O-262 75345p

    Irfp250 irfp460

    Abstract: FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3
    Text: Discrete MOSFETs TO-247 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-247 N-Channel HUF75345G3 55 Single 0.007 - - - 125 75 325 HUFA75345G3 55 Single 0.007 - - - 125


    Original
    PDF O-247 O-247 HUF75345G3 HUFA75345G3 HUF75344G3 HUFA75344G3 HUF75343G3 HUFA75343G3 HUF75339G3 HUFA75339G3 Irfp250 irfp460 FDH44N50 IRFP460 IRFP250N IRFP240 IRFP9150 HUF75639 N-channel MOSFET to-247 HUF75344G3 HUF75345G3

    75345P

    Abstract: HUF75345S3ST 75345S HUF75345G3 HUF75345P3 HUF75345S3S TA75345 TB334 780E3
    Text: HUF75345G3, HUF75345P3, HUF75345S3S Data Sheet June 1999 75A, 55V, 0.007 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original
    PDF HUF75345G3, HUF75345P3, HUF75345S3S 43ucts 75345P HUF75345S3ST 75345S HUF75345G3 HUF75345P3 HUF75345S3S TA75345 TB334 780E3

    02e4

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Semiconductor Data Sheet 75A, 55V, 0.009 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S O-263AB O-263AB 02e4

    75343P

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan
    PDF HUF75343G3, HUF75343P3, HUF75343S3S 48e-1 23e-1 96e-2 HUF75343 15e-3 50e-2 40e-2 75343P

    75343P

    Abstract: 75343G
    Text: HUF75343G3, HUF75343P3, HUF75343S3S in t e r s i I Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75343G3, HUF75343P3, HUF75343S3S HUF7S343G3, AN7254 AN7260. 75343P 75343G

    75343p

    Abstract: 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor June 1999 Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75343G3, HUF75343P3, HUF75343S3S 85e-2 76e-3 35e-3 64e-2 48e-1 23e-1 96e-2 75343p 75343 75343G 02-E4 TA75343 91E2 27e5 HUF75343P

    75344G

    Abstract: 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST
    Text: interrii HUF75344G3, HUF75344P3, HUF75344S3S January 2000 Data Sheet 75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs -9 These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


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    PDF HUF75344G3, HUF75344P3, HUF75344S3S 75344G 75344P 75344 RELAY TC1 TA75344 HUF75344 HUF75344G3 HUF75344P3 HUF75344S3S HUF75344S3ST