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    HUF75343S3ST Search Results

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    HUF75343S3ST Price and Stock

    onsemi HUF75343S3ST

    MOSFET N-CH 55V 75A D2PAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey HUF75343S3ST Reel
    • 1 -
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    Harris Semiconductor HUF75343S3ST

    0.009OHM, N-CHANNEL, SI, POWER, MOSFET, TO-263AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HUF75343S3ST 1,750
    • 1 $1.575
    • 10 $1.575
    • 100 $1.575
    • 1000 $0.7245
    • 10000 $0.6615
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    HUF75343S3ST Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HUF75343S3ST Fairchild Semiconductor 75 A, 55 V, 0.009 ohm, N-Channel UltraFET Power MOSFET Original PDF
    HUF75343S3ST Intersil MOSFET, Enhancement, N Channel, 55V, TO-263, 3-Pin Original PDF
    HUF75343S3S/T Toshiba Power MOSFETs Cross Reference Guide Original PDF

    HUF75343S3ST Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    fairchild to-220ab 75343P

    Abstract: 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet December 2001 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3S fairchild to-220ab 75343P 75343p 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334

    75343P

    Abstract: 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3S 43oducts 75343P 75343G 4352 HUF75343G3 HUF75343P3 HUF75343S3S HUF75343S3ST TA75343 TB334 75343S

    fairchild to-220ab 75343P

    Abstract: 75343g 75343s 75343p HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Data Sheet 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S fairchild to-220ab 75343P 75343g 75343s 75343p HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343

    HRF3205 equivalent

    Abstract: HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A
    Text: Date Created: 3/29/2004 Date Issued: 4/6/2004 PCN # 20041001-A DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0041001-A 0030402-A. RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 RFP45N06 HRF3205 equivalent HUF75343S3 RFP70N06 100C BUZ11 HUF75344P3 HUF75329D3ST RFD16N05LSM9A

    75343p

    Abstract: 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S S E M I C O N D U C T O R 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs August 1997 Features Description • 75A, 55V The HUF75343 N-Channel power MOSFET is manufactured using the innovative UltraFET™ process. This advanced


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S HUF75343 1-800-4-HARRIS 75343p 75343 75343G 75343S HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343

    rh-24v

    Abstract: JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C
    Text: Date Created: 2/24/2004 Date Issued: 4/8/2004 PCN # 20040802 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF RFG70N06 RFP45N06 HRF3205 HUF75307D3ST HUF75309D3S HUF75309T3ST HUF75321D3ST HUF75321S3ST R4908 HUF75329D3ST rh-24v JESD22-A105 a105 transistor HUF75309D3ST HRF3205 equivalent JESD22-A110 RFD3055LESM9A rfp70n06 transistor a105 100C

    HUF75309D3ST

    Abstract: HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference
    Text: Date Created: 3/8/2004 Date Issued: 3/23/2004 PCN # 20041001 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL Reference FCST PCN number 20030402-A. This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		PDF 0030402-A. ClinF75345P3 HUF75345S3ST RFD14N05 RFD14N05LSM9A RFD16N05 RFD16N05SM RFD3055LE RFD3055SM RFG70N06 HUF75309D3ST HRF3205 equivalent RFD3055LESM9A RFP70N06 HUF75344P3 100C BUZ11 RFP50N06 RFD16N05LSM9A rfp50n06 reference

    12SnOFC

    Abstract: PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532
    Text: Date Created: 12/30/2003 Date Issued: 1/15/2004 PCN # 20040002 FORECAST CHANGE NOTIFICATION This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence. This is a preliminary notification. A final PCN will


    Original     		PDF fairchildF76143S3S HUF76145S3S HUF76419S3ST HUF76432S3S HUF76439S3S HUF76445S3ST HUF76639S3S HUF76645S3ST ISL9N303AS3 ISL9N306AS3ST 12SnOFC PMC-90 PMC-90 leadframe material 92.5Pb5Sn2.5Ag Tamac4 MKT-TO263A02 pmc90 PMC-90 to-263 RF1S640SM9A FDB2532

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		PDF 1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note

    75343P

    Abstract: 75343S 75343G HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343 TB334
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S S E M I C O N D U C T O R 75A, 55V, 0.009 Ohm, N-Channel, UltraFET Power MOSFETs October 1997 Features Description • 75A, 55V • Ultra Low On-Resistance, rDS ON = 0.009Ω • Diode Exhibits Both High Speed and Soft Recovery


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S TB334, HUF75343 75343P 75343S 75343G HUF75343G3 HUF75343P3 HUF75343S3 HUF75343S3S HUF75343S3ST TA75343 TB334

    75343p

    Abstract: 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    Original     		PDF HUF75343G3, HUF75343P3, HUF75343S3S 75343p 75343G fairchild to-220ab 75343P HUF75343G3 75343 HUF75343p3 75343S HUF75343S3S HUF75343S3ST TA75343

    02e4

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S Semiconductor Data Sheet 75A, 55V, 0.009 Ohm, N-Channel, UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75343G3, HUF75343P3, HUF75343S3, HUF75343S3S O-263AB O-263AB 02e4

    75343P

    Abstract: No abstract text available
    Text: HUF75343G3, HUF75343P3, HUF75343S3S Semiconductor Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75343G3, HUF75343P3, HUF75343S3S 48e-1 23e-1 96e-2 HUF75343 15e-3 50e-2 40e-2 75343P

    75343P

    Abstract: 75343G
    Text: HUF75343G3, HUF75343P3, HUF75343S3S in t e r s i I Data Sheet June 1999 75A, 55V, 0.009 Ohm, N-Channel UltraFET Power MOSFETs These N-Channel power MOSFETs are manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area,


    OCR Scan     		PDF HUF75343G3, HUF75343P3, HUF75343S3S HUF7S343G3, AN7254 AN7260. 75343P 75343G