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    HN1D01FU Price and Stock

    Toshiba America Electronic Components HN1D01FU,LF(T

    DIODE ARRAY GP 80V 100MA US6
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    DigiKey HN1D01FU,LF(T Digi-Reel 3,107 1
    • 1 $0.32
    • 10 $0.196
    • 100 $0.32
    • 1000 $0.08035
    • 10000 $0.08035
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    HN1D01FU,LF(T Cut Tape 3,107 1
    • 1 $0.32
    • 10 $0.196
    • 100 $0.32
    • 1000 $0.08035
    • 10000 $0.08035
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    HN1D01FU,LF(T Reel 3,000
    • 1 -
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    • 10000 $0.06591
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    Avnet Americas HN1D01FU,LF(T Reel 20 Weeks 3,000
    • 1 -
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    • 10000 $0.04917
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    Mouser Electronics HN1D01FU,LF(T
    • 1 $0.3
    • 10 $0.183
    • 100 $0.079
    • 1000 $0.071
    • 10000 $0.05
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    Toshiba America Electronic Components HN1D01FU(T5L,F,T)

    Small Signal Switching Diodes 85V Vrm 80VR 300mA 2A IFSM 0.92V VF
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    Mouser Electronics HN1D01FU(T5L,F,T)
    • 1 -
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    • 10000 $0.077
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    Toshiba America Electronic Components HN1D01FU,LF(B

    HN1D01FU,LF(B
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    Verical HN1D01FU,LF(B 1,300 329
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    Quest Components HN1D01FU,LF(B 1,040
    • 1 $0.86
    • 10 $0.86
    • 100 $0.387
    • 1000 $0.258
    • 10000 $0.258
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    Toshiba America Electronic Components HN1D01FU(TE85L,F)

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components HN1D01FU(TE85L,F) 2,032
    • 1 $1.335
    • 10 $1.335
    • 100 $1.335
    • 1000 $0.534
    • 10000 $0.4673
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    HN1D01FU Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    HN1D01FU Toshiba Diode, Ultra High Speed Switching Application Original PDF
    HN1D01FU Toshiba Japanese - Diodes Original PDF
    HN1D01FU Toshiba Diodes Original PDF
    HN1D01FU Unknown The Diode Data Book with Package Outlines 1993 Scan PDF
    HN1D01FU Toshiba DIODE (ULTRA HIGH SPEED SWITCHING APPLICATIONS) Scan PDF
    HN1D01FU,LF Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D01FU,LF(T Toshiba Semiconductor and Storage Discrete Semiconductor Products - Diodes - Rectifiers - Arrays - DIODE ARRAY GP 80V 100MA US6 Original PDF
    HN1D01FU(T5L,F,T) Toshiba HN1D01FU - Diode Switching 85V 0.3A 6-Pin US T/R Original PDF

    HN1D01FU Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)


    Original     		PDF HN1D01FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU 東芝ダイオード シリコンエピタキシャルプレーナ形ダイオード HN1D01FU ○ 超高速スイッチング用 単位: mm z ウルトラスーパーミニ 6 端子 パッケージにアノードコモンを 2 ユニッ トを内蔵しています。


    Original     		PDF HN1D01FU 100mA HN1D01FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage : VF 3 = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01FU HN1D01FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm Small package Low forward voltage : VF 3 = 0.92V (typ.) Fast reverse recovery time : trr = 1.6ns (typ.) Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)


    Original     		PDF HN1D01FU HN1D01FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm z Small package z Low forward voltage: VF 3 = 0.92 V (typ.) z Fast reverse recovery time: trr = 1.6 ns (typ.) z Small total capacitance: CT = 2.2 pF (typ.)


    Original     		PDF HN1D01FU

    HN1D01FU

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA Diode Silicon Epitaxial Planar Type HN1D01FU Ultra High Speed Switching Application Unit in mm l Small package l Low forward voltage : VF 3 = 0.92V (typ.) l Fast reverse recovery time : trr = 1.6ns (typ.) l Small total capacitance : CT = 2.2pF (typ.)


    Original     		PDF HN1D01FU HN1D01FU

    SCJ0004N

    Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
    Text: 東芝半導体製品総覧表 2009 年 7 月版 ダイオード 整流ダイオード 可変容量ダイオード 高周波スイッチ用ダイオード ツエナーダイオード スイッチングダイオード ショットキーバリアダイオード


    Original     		PDF SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT

    lm2804

    Abstract: marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983
    Text: 2008-3 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g C O N T E N T S 1 Packaging Information.


    Original     		PDF BCE0030C S-167 BCE0030D lm2804 marking 513 SOD-323 land dpu 230 toshiba diode 1SS416 footprint 5252 F solar sot23 2fv TAH8N401K IC sj 4558 zener diode reference guide rn4983

    Variable Capacitance Diodes

    Abstract: 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24
    Text: Diodes Rectifiers z 252 Variable Capacitance Diodes z 254 Radio-Frequency Switching Diodes z 255 Zener Diodes z 256 Switching Diodes z 262 Schottky Barrier Diodes z 265 Photodiodes z 270 251 Rectifiers General-Purpose Rectifiers Average Forward Current A


    Original     		PDF TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG02 CRG01 CRG04 CMG06 Variable Capacitance Diodes 1SV283B 2fu smd transistor bidirectional zener diode 015DZ4 015AZ15 CRS06 smd diode Lz zener general purpose zener diode 256 CMZ24

    SSM3J307T

    Abstract: SSM3J328R SSM3J334R
    Text: 2011-5 PRODUCT GUIDE General-Purpose Small-Signal Surface-Mount Devices Transistors, MOSFETs, ESD-Protection Diodes, Schottky Barrier Diodes, L-MOS 1- to 3-Gate Logic ICs , LDOs, Operational Amplifiers, Digital-Output Magnetic Sensors SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / e n g


    Original     		PDF 200-mA BCE0030D SSM3J307T SSM3J328R SSM3J334R

    ESM 740

    Abstract: transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126
    Text: 2004-3 PRODUCT GUIDE General-Purpose Surface-Mount Devices semiconductor 2004 http://www.semicon.toshiba.co.jp/eng Greeting from Toshiba Toshiba Corporation has developed and provided key devices such as information equipment and information appliance, employing the most advanced technology.


    Original     		PDF SCE0003A ESM 740 transistor SMD t04 51 D245A LM2804 transistor SMD t04 Solar Garden Light Controller 4 pin 2fu smd transistor transistor t04 smd pnp Octal Darlington Transistor Arrays DIP WB126

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		PDF 5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al

    4558 dd

    Abstract: 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN
    Text: F5/F6 Type No. 1 1 öS Max. Rating V r V SMV/SM6 USV/US8 Structure P(mW)* IO(mA) SMV/SM6 USVAJS6 Connection Mark 1SS308 80 100 300 200 1SS181 X 2 A1 1SS309 80 100 300 200 1SS184 X 2 A2 HN1D01F HN1D01FU 80 100 300 200 1SS181 X 2 HN1D02F HN1D02FU 80 100 300


    OCR Scan     		PDF 1SS308 1SS181 1SS309 1SS184 HN1D01F HN1D01FU HN1D02F HN1D02FU 1SS184X2 4558 dd 5W393 4558 equivalent TA75558 LM358 TA75S393 TA75393 LM393 4558 4558 8 PIN

    diode n1d

    Abstract: HN1D01FU
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr= 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU 961001EAA2' diode n1d HN1D01FU

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA HN1D01FU TO SHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SW ITCHING APPLICATIO N. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse Recovery Time : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU

    Untitled

    Abstract: No abstract text available
    Text: HN1D01FU TOSHIBA TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. • • • • Unit in mm Small Package Low Forward Voltage : Vjr 3 = 0.92V (Typ.) Fast Reverse RecoveryTime : trr = 1.6ns (Typ.) Small Total Capacitance


    OCR Scan     		PDF HN1D01FU 961001EAA2'

    e50e

    Abstract: HN1D01FU MARKING TE US6
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE H N 1 D 0 1 FU ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : trr= 1.6ns Typ. • Small Total Capacitance : Vp (3) = 0.92V (Typ.)


    OCR Scan     		PDF HN1D01FU N1D01 961001EAA2' e50e HN1D01FU MARKING TE US6

    sm2006

    Abstract: lu2b
    Text: TOSHIBA HN1D01FU TOSHIBA DIODE SILICON EPITAXIAL PLANAR TYPE n n 1 F 11 h n i m m m 'm m mmr ULTRA HIGH SPEED SWITCHING APPLICATION. Unit in mm • Small Package • Low Forward Voltage • Fast Reverse Recovery Time : tr r = 1.6ns Typ. • Small Total Capacitance


    OCR Scan     		PDF HN1D01FU 961001EA sm2006 lu2b

    2N3904 331 transistor

    Abstract: C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737
    Text: 1 • ALPHANUMERICAL INDEX • Transistors Type No. Page Type No. Page Type No. Page Type No. Page * 2N3903 — 2SA1213 163 *2SC1815(L) — * 2SC2995 — * 2N3904 — 2SA1245 167 *2SC1923 — 2SC2996 266 * 2N3905 — 2SA1255 170 *2SC1959 — 2SC3011 272


    OCR Scan     		PDF 2N3903 2N3904 2N3905 2N3906 2N4123 2N4124 2N4125 2N4126 2N4401 2N4402 2N3904 331 transistor C549 transistor 2SK1227 transistor 1201 1203 1205 transistor C549 transistor Hand book 2N5551 2SC1815 2SK246 2n4401 331 02CZ27 transistor 737

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 MA122 MA123 30MAX ES1100 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    1SS309

    Abstract: DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC
    Text: 17 4 - - nï m it « s fe aï V r rm Vr V (V) (fliA) 80 80 300 300 Io ,If* I fm <°C) (nA) I fsm cc> (A) 1SS308 1SS309 DA-3N DA-3P DA-4N * ') *s y * y -y y 85 85 35 35 35 DA-4P DA-6NC DA-6PC DA-8N DA-8P * * * * * y y y •) ') V y y * y î? y & y 35 35 35


    OCR Scan     		PDF 1SS309 MA123 E1388 11MIN -16UNF' 48MAX DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401 DA6PC

    628B

    Abstract: 1SS309 DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401
    Text: - 1 74 - nï m it « 1SS308 1SS309 DA-3N DA-3P DA-4N s * ' *s y * y -y y Vr V) (V) (fliA) <°C) 80 80 300 300 85 85 35 35 35 fe aï Vr r m If m I o , If * (nA) cc> (A) Vpm a x m* iSÆismtÉ (WJAfc I Rmax fkñ (V) IF <mA) ( ß A) V f (V) IR'JWl If s m <°C)


    OCR Scan     		PDF 1SS309 IMP11 DAP202Kia LB1105M MA6S121 MA6S718 100MHz) MA122 MA123 628B DAN-10 DAN401 DAN403 DAN601 DAN801 DAN802 DAN803 DAP401

    S3 DIODE schottky

    Abstract: S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B
    Text: Ultra S u per Mini Diodes Type No. F6 Electrical Characteristics {Ta=25°C Application Va V) lo(mA) trr(ns) 1SS300 High-speed switching 80 100 1.6TYP 1SS301 High-speed switching 60 100 1.6TYP 1SS302 High-speed switching 60 100 1.6TYP 1SS322 High-speed switching


    OCR Scan     		PDF 1SS300 1SS301 1SS302 1SS322 1SS357 1SS367 1SS370 1SS372 1SS378 HN1D01FU S3 DIODE schottky S4 DIODE schottky 2SA1015 MARK MQ 1S1585 common anode schottky diode DIODE MARK B