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Toshiba America Electronic Components 1SS372(TE85L,F) DIODE SCHOTTKY 10V 100MA USM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS372(TE85L,F)	Digi-Reel	8,755		1	1 $0.29 10 $0.18 100 $0.29 1000 $0.07327 10000 $0.07327	Buy Now
	1SS372(TE85L,F)	Cut Tape	8,755		1	1 $0.29 10 $0.18 100 $0.29 1000 $0.07327 10000 $0.07327	Buy Now
	1SS372(TE85L,F)	Reel	6,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.06114	Buy Now
Avnet Americas	1SS372(TE85L,F)	Reel		24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $0.0447	Buy Now
Mouser Electronics	1SS372(TE85L,F)		16,353			1 $0.24 10 $0.163 100 $0.072 1000 $0.064 10000 $0.042	Buy Now
Quest Components	1SS372(TE85L,F)		7,325			1 $0.605 10 $0.605 100 $0.605 1000 $0.605 10000 $0.1815	Buy Now
TTI	1SS372(TE85L,F)	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $0.042	Buy Now

Avnet Asia	1SS372(TE85L,F)			24 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Chip1Stop	1SS372(TE85L,F)	Cut Tape	21,033			1 - 10 $0.231 100 $0.0753 1000 $0.0719 10000 $0.0712	Buy Now
Micro Commercial Components 1SS372-TP DIODE ARR SCHOT 10V 100MA SOT323
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	1SS372-TP	Bulk			3,000	1 - 10 - 100 - 1000 - 10000 $0.05666	Buy Now
Mouser Electronics	1SS372-TP					1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components 1SS372TE85LF Diode Small Signal Schottky 15V 0.1A 3-Pin USM T/R
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Verical	1SS372TE85LF		21,033		331	1 - 10 - 100 - 1000 $0.0941 10000 $0.0919	Buy Now
	1SS372TE85LF		6,000		360	1 - 10 - 100 - 1000 $0.2032 10000 $0.1919	Buy Now
	1SS372TE85LF		386		360	1 - 10 - 100 - 1000 $0.2179 10000 $0.2179	Buy Now
Toshiba America Electronic Components 1SS372(TE85L F)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	1SS372(TE85L F)		1,555			1 $0.775 10 $0.775 100 $0.775 1000 $0.31 10000 $0.31	Buy Now
Toshiba America Electronic Components 1SS372(TE85L)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Quest Components	1SS372(TE85L)		853			1 $2.12 10 $2.12 100 $2.12 1000 $0.8745 10000 $0.8745	Buy Now

1SS372 Datasheets (10)

Part	Manufacturer	Description	Datasheet Type	PDF
1SS372	Galaxy Semi-Conductor Holdings	Schottky Barrier Diode	Original	PDF
1SS372	Kexin	High Speed Switching Diode	Original	PDF
1SS372	Toshiba	Japanese - Diodes	Original	PDF
1SS372	Toshiba	shottky barrier diode	Original	PDF
1SS372	TY Semiconductor	Silicon Epitaxial Schottky Barrier Diode - SOT-323	Original	PDF
1SS372	TY Semiconductor	High Speed Switching Diode - SOT-323	Original	PDF
1SS372	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF
1SS372	Toshiba	DIODE (HIGH SPEED SWITCHING APPLICATION)	Scan	PDF
1SS372	Toshiba	DIODE	Scan	PDF
1SS372(TE85L,F)	Toshiba America Electronic Components	SMALL-SIGNAL SCHOTTKY BARRIER DI	Original	PDF

1SS372 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM	Original	PDF	1SS372
schottky marking code PD Abstract: No abstract text available Text: 1SS372W SILICON EPITAXIAL SCHOTTKY BARRIER DIODE Applications • High speed switching 3 1 2 Marking Code: ME Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Maximum Peak Reverse Voltage VRM 15 V Reverse Voltage VR 10 V Average Forward Current	Original	PDF	1SS372W schottky marking code PD
Untitled Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit in mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage	Original	PDF	1SS372
Untitled Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15	Original	PDF	1SS372 SC-70
diode marking N9 Abstract: SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K Text: BL Galaxy Electrical Production specification Schottky Barrier Diode 1SS372 FEATURES z Small surface mounting type. z Small package. z Low forward voltage:VF=0.23V typ . Pb Lead-free APPLICATIONS z For general purpose applications. SOT-323 ORDERING INFORMATION	Original	PDF	1SS372 OT-323 BL/SSSKF013 100mA diode marking N9 SOT-323 n9 diode N9 1SS372 sot 323 marking code sot323 marking K
Untitled Abstract: No abstract text available Text: Product specification 1SS372 Features Low forward voltage:VF = 0.23 V Typ @ IF = 5mA Absolute M axim um R atings T a = 25 Param eter M axim um (peak) reverse voltage Sym bol Rating Unit V RM 15 V Reverse voltage VR 10 V M axim um (peak) forward current I FM	Original	PDF	1SS372
Untitled Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage	Original	PDF	1SS372 SC-70 100mA
MARKING N9 Abstract: diode marking N9 Text: 1SS372 Schottky Barrier Diodes SOT-323 Features Small surface mounting type. Small package. Low forward voltage:VF=0.23V typ . Applications For general purpose applications. Dimensions in inches and (millimeters) Ordering Information Type No. Marking	Original	PDF	1SS372 OT-323 1SS372 100mA MARKING N9 diode marking N9
1SS372 Abstract: No abstract text available Text: Diodes SMD Type Silicon Epitaxial Schottky Barrier Type 1SS372 Features Small package Low forward voltage : VF = 0.23V typ. @ IF=5mA 1 ANODE 3 CATHODE/ANOD 2 CATHODE Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Maximum (Peak) reverse voltage	Original	PDF	1SS372 100mA 1SS372
1SS372 Abstract: No abstract text available Text: 1SS372 東芝ダイオードシリコンエピタキシャルショットキバリア形 1SS372 ○ 高速スイッチング用単位: mm z 小型外囲器なので高密度実装に最適です。 z 順方向電圧が低い。 : VF = 0.23V 標準 @IF = 5mA	Original	PDF	1SS372 100mA 1SS372
1SS372 Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15	Original	PDF	1SS372 SC-70 1SS372
PBD 3511 Abstract: No abstract text available Text: WON-TOP ELECTRONICS Material Composition Declaration Package Information Package SOT-323 Package Weight mg 6 Product Group Type No. MMBD352W RB706F-40, RB715F, RB717F BAS70W / AW / CW / SW 1SS372 MMBD717W / AW / CW / SW BAT54W / AW / CW / SW MMBD330 BAS40W / AW / CW / SW	Original	PDF	OT-323 MMBD352W RB706F-40, RB715F, RB717F BAS70W 1SS372 MMBD717W BAT54W MMBD330 PBD 3511
Untitled Abstract: No abstract text available Text: 1SS372 SURFACE MOUNT SCHOTTKY BARRIER DIODE WON-TOP ELECTRONICS Pb Features  Low Turn-On Voltage   Fast Switching Speed PN Junction Guard Ring for Transient and ESD Protection For General Purpose Switching Applications Plastic Material – UL Recognition Flammability	Original	PDF	1SS372 OT-323, MIL-STD-202,
1SS372 Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm l Small package l Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage	Original	PDF	1SS372 1SS372

1SS372 Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm Small package Low forward voltage: VF = 0.23V typ. @IF = 5mA Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15 V Reverse voltage	Original	PDF	1SS372 1SS372
1SS372 Abstract: No abstract text available Text: 1SS372 TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS372 High Speed Switching Application Unit: mm z Small package z Low forward voltage: VF = 0.23V typ. @IF = 5mA Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit VRM 15	Original	PDF	1SS372 SC-70 1SS372
Untitled Abstract: No abstract text available Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Diodes 1SS372 SCHOTTKY BARRIER DIODE SOT-323 FEATURES  Small Package  Low Forward Voltage APPLICATIONS  High Speed Switching MARKING: N9 MAXIMUM RATINGS Ta=25℃ unless otherwise noted	Original	PDF	OT-323 1SS372 OT-323 100mA
Untitled Abstract: No abstract text available Text: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# 1SS372 Features • • • • • Halogen free available upon request by adding suffix "-HF" High reliability	Original	PDF	1SS372 OT-323
SCJ0004N Abstract: JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT Text: 東芝半導体製品総覧表 2009 年 7 月版ダイオード整流ダイオード可変容量ダイオード高周波スイッチ用ダイオードツエナーダイオードスイッチングダイオードショットキーバリアダイオード	Original	PDF	SCJ0004N TPC6K01 HMG01 CRG02 CRG07 CRG03 CMG05 CMG07 CMG02 CRG01 SCJ0004N JDV2S71E DF2S6.8UFS 015AZ3.3 1ss421 CMG07 CMZ24 CRS06 DF2S5.6SC DF3S6.8ECT
Untitled Abstract: No abstract text available Text: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 . Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i 3 - MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS372 SS372
1SS372 Abstract: No abstract text available Text: TOSHIBA 1SS372 TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL SCHOTTKY BARRIER TYPE 1SS372 Unit in mm 2.1 ± 0.1 • • Small Package Low Forward Voltage : Vjn = 0.23V TYP. @Ijr = 5mA ,1 .2 5 ± 0 .1 oo + I 3E- •a 2 MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS372 1SS372
Untitled Abstract: No abstract text available Text: TOSHIBA 1SS372 TO SHIBA DIODE SILICON EPITAXIAL SCH OTT KY BARRIER TYPE 1 HIGH SPEED SWITCHING APPLICATION • Small Package • Low Forward Voltage : Vf = 0.23V TY P . @Ijr = 5 m A M A X IM U M RATINGS (Ta = 25°C) SYMBOL RATING UNIT VRM 15 V Reverse Voltage	OCR Scan	PDF	1SS372
SS372 Abstract: No abstract text available Text: 1SS372 T O SH IB A TOSHIBA DIODE HIGH SPEED SWITCHING APPLICATION 1 SS372 SILICON EPITAXIAL SCHOTTKY BARRIER TYPE Unit in mm 2.1 ± 0.1 • • 1.2 5 ± 0.1 Small Package Low Forward Voltage : Vp = 0.23V TYP. @Ip = 5mA o c + i MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	PDF	1SS372 SS372 SS372
1S1585 Abstract: 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241 Text: Super-Mini Diodes SOT-23MOD, SOT-143MOD. F6 Mark Equivalent other package Type No. A3 1S1585 Anode common Cathode comon Electrical Characteristics (Ta=25°C) Type No. Application V r(V) IO(mA) trr (ns) Connection JX. Remarks 1SS181 High-speed switching 80	OCR Scan	PDF	OT-23MOD, OT-143MOD. 1S1585 107YP 1SS239 1S1585 equivalent 1SV147 1ss193 equivalent 1SS SOT mark 1SS337 J9 1SV99 1SV103 1SS241

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Toshiba America Electronic Components 1SS372(TE85L,F)

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1SS372 Datasheets (10)

1SS372 Datasheets Context Search

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schottky marking code PD

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diode marking N9

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MARKING N9

1SS372

1SS372

1SS372

PBD 3511

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1SS372

1SS372

1SS372

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SCJ0004N

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1SS372

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SS372

1S1585