nec 2571 4 pin
Abstract: gl 2576 NEZ7785-15D NEZ3642-15D NEZ4450-15D NEZ5964-15D NEZ6472-15D nez5964-15dd
Text: PRELIMINARY DATA SHEET GaAs MES FET 15 W C-BAND POWER GaAs FET NEZ SERIES 15 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer 0.5 ±0.1 for microwave and satellite communications.
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NEC 2561
Abstract: 2561 nec NEC semiconductor 2561 17-33 0952 2561 a nec NE6501077 nec 0882 p 2 nec 2561 4 pin
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S 17.5 ±0.5
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NE6501077
NE6501077
NEC 2561
2561 nec
NEC semiconductor 2561
17-33 0952
2561 a nec
nec 0882 p 2
nec 2561 4 pin
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NE6500496
Abstract: 094-3 MAG
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
094-3 MAG
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C-Band Power GaAs FET
Abstract: NEZ3642-4D NEZ3642-8D NEZ4450-4D NEZ4450-8D NEZ5964-4D NEZ5964-8D NEZ6472-4D NEZ7177-4D NEZ7785-4D
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm 0.5±0.1 The NEZ Series of microwave power GaAs FETs offer C1.5 4PLACES GATE 2.5MIN. high output power, high gain and high efficiency at C-band
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NE85002
Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.
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NE85002
NE8500295
NE8500200
NE8500200
NE8500200-RG
NE8500200-WB
NE8500295-4
NE8500295-6
NE8500295-8
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F A 505
Abstract: MGFC45V5053A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5053A 5.05~5.25GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5053A is an internally impedance matched GaAs power FET especially designed for use in 5.05~5.25
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MGFC45V5053A
25GHz
MGFC45V5053A
25GHz
-45dBc
160mA
Item-51
F A 505
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fet data book free download
Abstract: MGFC45V5964A
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC45V5964A 5.9~6.4GHz BAND 32W INTERNALLY MATCHD GaAs FET DESCRIPTION Until : millimeters inches OUTLINE DRAWING The MGFC45V5964A is an internally impedance matched GaAs power FET especially designed for use in 5.9~6.4
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MGFC45V5964A
MGFC45V5964A
-42dBc
160mA
Item-51
10MHz
fet data book free download
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Nec K 872
Abstract: NE85001 NE8500100 NE8500100-RG NE8500100-WB NE8500199
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
Nec K 872
NE8500100-RG
NE8500100-WB
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TC-2303
Abstract: NEC 3377 NE76184A transistor NEC D 582 transistor NEC D 587 NE76184A-SL NE76184A-T1 NE76184A-T1A p1085
Text: DATA SHEET GaAs MES FET NE76184A GENERAL PURPOSE FET N-CHANNEL GaAs MES FET DESCRIPTION NE76184A is a N-channel GaAs MES FET housed in ceramic package. The device is fabricated by ion implantation for improved RF and DC performance reliability and uniformity. Its
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NE76184A
NE76184A
NE76184A-SL
NE76184A-T1
NE76184A-T1A
TC-2303
NEC 3377
transistor NEC D 582
transistor NEC D 587
NE76184A-SL
NE76184A-T1
NE76184A-T1A
p1085
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4433 fet
Abstract: F4535 high power FET transistor s-parameters MGFC42V3436 VDS-10
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V3436 3.4 - 3.6GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING The MGFC42V3436 is an internally impedance-matched Unit: millimeters GaAs power FET especially designed for use in 3.4 - 3.6 24+/-0.3
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MGFC42V3436
MGFC42V3436
4433 fet
F4535
high power FET transistor s-parameters
VDS-10
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MGFC39V5964A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V5964A 5.9 ~ 6.4GHz BAND 8W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC39V5964A is an internally impedance-matched GaAs power FET especially designed for use in 5.9 ~ 6.4 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V5964A
MGFC39V5964A
28dBm
10MHz
June/2004
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MGFC39V3436
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC39V3436 3.4 ~ 3.6GHz BAND 8W INTERNALLY MATCHED GaAs FET . DESCRIPTION The MGFC39V3436 is an internally impedance-matched GaAs power FET especially designed for use in 3.4 ~ 3.6 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC39V3436
MGFC39V3436
28dBm
Oct-03
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MGFC42V7785A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC42V7785A
MGFC42V7785A
32dBm
10MHz
June/2004
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MGFC36V4450A
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V4450A
MGFC36V4450A
25dBm
10MHz
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MGFC36V4450A
Abstract: MGFC36V4450
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC36V4450A 4.4 ~ 5.0GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V4450A is an internally impedance-matched GaAs power FET especially designed for use in 4.4 ~ 5.0 GHz band amplifiers.The hermetically sealed metal-ceramic
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MGFC36V4450A
MGFC36V4450A
25dBm
10MHz
June/2004
MGFC36V4450
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET 4W/8W C-BAND POWER GaAs FET NEZ Series 4W/8W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS unit: mm The NEZ Series of microwave power GaAs FETs offer high output power, high gain and high efficiency at C-band
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NEZ3642-4D,
NEZ4450-4D,
NEZ5964ter
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sn 0716
Abstract: NEC D 587
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6500496 4W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET PACKAGE DIMENSION UNIT: mm DESCRIPTION The NE6500496 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. 1.0 ± 0.1
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NE6500496
NE6500496
sn 0716
NEC D 587
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2407A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2407A
MGFC2400
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M 1661 S
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC2415A C - Ku BAND MEDIUM-POWER GaAs FET DESCRIPTION The MGFC2400 series GaAs FETs were designed for high frequency, medium and high power GaAs FET with N-channel Schottky barrier gate type. FEATURES • High output power
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MGFC2415A
MGFC2400
150mA
M 1661 S
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NEC 2561
Abstract: sn 1699 NEC 2561 E 2561 a nec sn 0952 2561 nec nec d 1590 NEC semiconductor 2561 NEC 1357 NEC 2561 h
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.
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NE6501077
NE6501077
NEC 2561
sn 1699
NEC 2561 E
2561 a nec
sn 0952
2561 nec
nec d 1590
NEC semiconductor 2561
NEC 1357
NEC 2561 h
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mitsubishi f
Abstract: No abstract text available
Text: MITSUBISHI SEMICONDUCTOR GaAs FET MGFC36V7785A 7.7~8.5GHz BAND 4W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC36V7785A is an internally impedance-matched GaAs power FET especially designed "for use in 7.7~8.5GHz band amplifiers. The hermetically sealed
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MGFC36V7785A
MGFC36V7785A
--51D
45dBc
Item-01
Item-51
mitsubishi f
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NEC 1357
Abstract: Nec K 872
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85001 SERIES 1 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500199 Power GaAs FET covers 2 GHz to 10 GHz frequency range for commercial amplifier, oscillator applications and so on. NE8500100 is the two-cells recessed gate chip used in ‘99’ package.
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NE85001
NE8500199
NE8500100
NE8500100
NEC 1357
Nec K 872
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nec 2561
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS
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NE6501077
NE6501077
nec 2561
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nec d 1590
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.
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NE85002
NE8500295
NE8500200
CODE-95
nec d 1590
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