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NE8500200 Datasheets (6)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE8500200		NEC	2 W C-Band Power GaAs FET N-Channel GaAs MES FET		Original	PDF
NE8500200-AZ		NEC	FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET		Original	PDF
NE8500200-RG		NEC	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET		Original	PDF
NE8500200-RG-AZ		NEC	FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET		Original	PDF
NE8500200-WB		NEC	2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET		Original	PDF
NE8500200-WB-AZ		NEC	FET Transistor: 2W C-BAND POWER GaAs FET: N-CHANNEL GaAs MESFET		Original	PDF

NE8500200 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
marking code C1E SMD Transistor Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817 Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17	Original	PDF	P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
Untitled Abstract: No abstract text available Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour
80500 TRANSISTOR Abstract: 0-647-55 AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 80500 TRANSISTOR 0-647-55 AN-1001 NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 circulator 0.325 GHz
NE85002 Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid	Original	PDF
80500 TRANSISTOR Abstract: AN-1001 NE85002 NE8500200 NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 Text: NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES SELECTION CHART TYPICAL PERFORMANCE FREQUENCY GL RANGE dBm (GHz) (dB) • CLASS A OPERATION PART NUMBER • HIGH EFFICIENCY: ηADD ≥ 39% TYP POUT • BROADBAND CAPABILITY • PACKAGE OPTIONS: Chip	Original	PDF	NE85002 NE8500200 NE8500295-6 NE8500295-8 NE8500295-4 NE8500295 AN-1001 24-Hour 80500 TRANSISTOR NE85002 NE8500200 NE8500295-4 NE8500295-6 NE8500295-8
NE85002 Abstract: NE8500200 NE8500200-RG NE8500200-WB NE8500295 NE8500295-4 NE8500295-6 NE8500295-8 Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.	Original	PDF	NE85002 NE8500295 NE8500200 NE8500200 NE8500200-RG NE8500200-WB NE8500295-4 NE8500295-6 NE8500295-8
ne900075 Abstract: NE9000 Text: X and Ku-Band Internally Matched GaAs Devices Typical Specifications @ Tc = 25°C Uiwartty Linear Power Added PidB Gain Efficiency1 V d s dBm (dB) (% ) (V) Pmt P out e w w m tf Dootm^ni (A) IMS (dBc) (V) (A) Package Style NEZ1414-2E 14 to 14.5 34.0 7,5 27	OCR Scan	PDF	NEZ1414-2E NEZ1414-4E NEZ1414-8E NEZ1011-2E NEZ1011-8E ne900075 NE9000
80500 TRANSISTOR Abstract: No abstract text available Text: 2 WATT C-BAND POWER GaAs MESFET FEATURES • NE85002 SERIES SELECTION CHART T Y P IC A L P E R F O R M A N C E CLASS A OPERATION • HIGH EFFICIENCY: • BROADBAND CAPABILITY T\|ADD > 3 9 % PA RT NUM B ER TYP FR E Q U E N C Y RANGE G H z Po ut (dB m ) N E 8500200	OCR Scan	PDF	NE85002 NE8500295 AN-1001 80500 TRANSISTOR
nec d 1590 Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped elem ent matching network.	OCR Scan	PDF	NE85002 NE8500295 NE8500200 CODE-95 nec d 1590
80500 TRANSISTOR Abstract: J1186 J56-1 J-2-502 Text: NEC 2 WATT C-B AN D POWER GaAs MESFET FEATURES NE85002 SERIES SELECTION CHART • CLASS A OPERATION • HIGH EFFICIENCY: ^ add 2 39% TYP • BROADBAND CAPABILITY • PACKAGE OPTIONS: TYPICAL PERFORMANCE FREQUENCY G l RANGE dBm (GHz) (dB) PART NUMBER P out	OCR Scan	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 NE8500295 24-Hour 80500 TRANSISTOR J1186 J56-1 J-2-502
Untitled Abstract: No abstract text available Text: PRELIMINARY DATA SHEET GaAs MES FET NE85002 SERIES 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET D E S C R IP T IO N The NE8500295 power GaAs FET covers 3.5 to 8.5 GHz frequency range with three different Class A, 2.0 W partially matched devices. Each packaged device has an input lumped element matching network.	OCR Scan	PDF	NE85002 NE8500295 NE8500200
Untitled Abstract: No abstract text available Text: PRELIMINARY NE85002 SERIES 2 WATT C-BAND POWER GaAs MESFET FEATURES • SELECTION CHART • HIGH EFFICIENCY: r ADD > 3 5 % T Y P • BROADBAND CAPABILITY • TYPICAL PERFORMANCE CLASS A OPERATION PACKAGE OPTIONS: Chip Herm etic Package • PARTIALLY MATCHED INPUT FOR PACKAGED	OCR Scan	PDF	NE8500200 NE8500295-4 NE8500295-6 NE8500295-8 NE85002 AN-1001
NEM0899F01-30 Abstract: No abstract text available Text: Discrete Power Devices Selection Guide, 2-2 Power Devices Selection Guide US BAND INTERNALLY MATCHED GaAs DEVICES Typical Specifications @ Ta = 25'C » r u-v w i JL ct Ruawini i Part Number Frequency Range PidB GHz (dBm) Linearity Linear Power Added	OCR Scan	PDF	NES1821B-30 NES1821P-50 NES2527B-30 NEZ3436-30E NEL200101-24 NEL2004F02-24 NEL2012F03-24 NEM0899F01-30