MGFC42V7785A Search Results

MGFC42V7785A Datasheets (2)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
MGFC42V7785A		Mitsubishi	7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET		Original	PDF
MGFC42V7785A		Mitsubishi	7.7-8.5GHz Band 16W Internally Matched GaAs FET		Scan	PDF

MGFC42V7785A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
MGFC42V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC42V7785A 7.7 – 8.5 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC42V7785A MGFC42V7785A -45dBc
Untitled Abstract: No abstract text available Text: < C band internally matched power GaAs FET > MGFC42V7785A 7.7 – 8.5 GHz BAND / 16W DESCRIPTION unit : m m OUTLINE The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic	Original	PDF	MGFC42V7785A MGFC42V7785A -45dBc
delta 6 radio Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC42V7785A MGFC42V7785A 32dBm 10MHz June/2004 delta 6 radio
MGFC42V7785A Abstract: No abstract text available Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC42V7785A 7.7 ~ 8.5GHz BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally impedance-matched GaAs power FET especially designed for use in 7.7 ~ 8.5 GHz band amplifiers.The hermetically sealed metal-ceramic	Original	PDF	MGFC42V7785A MGFC42V7785A 32dBm 10MHz
C42V5964 Abstract: MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776 Text: Please Read “Notes” First! Contents Notes Contact Addresses MITSUBISHI ELECTRIC CORPORATION Contents Si Devices GaAs Devices Optical Devices Applications Quality Assurance and Reliability Testing Optical Modules Top Page © MITSUBISHI ELECTRIC CORPORATION	Original	PDF	M6STA-005VA/WA/SA MF-156STA-006VA/WA/SA MF-156SRA-002VA/WA/SA MF-622STA-004VA/WA/SA MF-622STA-005VA/WA/SA MF-622STA-006VA/WA/SA MF-622SRA-002VA/WA/SA MF-2500STA-002VA/WA, 003VA/WA, 004VA/WA C42V5964 MGF1302 TRANSISTOR MGF1601 MGFC1402 M57721 M67760LC H2 MARKING SOT-89 mmIC 2SC5125 MITSUBISHI M57710-A M68776
MGF4937 Abstract: MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1 Text: HIGH FREQUENCY DEVICES High Frequency Devices The Best Solution for Realizing the Information Era. Communication networks, such as high speed Internet, video-on-demand and high-speed data communcation, are developing rapidly. We are ready to offer the best solution to the systems for realizing the information era by providing a variety of GaAs/GaN products designed	Original	PDF	H-CX587-R KI-1311 MGF4937 MGFG5H1503 MGF4937AM GD-32 MGFG5H1502 MGF0904 mgfc39v5964 MGF2430 MGF0909A BA012J1
MGFC42V7785A Abstract: No abstract text available Text: 27-March'98 MITSUBISHI SEMICONDUCTOR <GaAs FET> MG FC42V7785A 7.7-8.5GHZ BAND 16W INTERNALLY MATCHED GaAs FET DESCRIPTION The MGFC42V7785A is an internally Impedance-matched OUTLINE DRAWING Uritimllinreters inches GaAs power FET especially designed for use in 7.7-8.5	OCR Scan	PDF	27-March FC42V7785A MGFC42V7785A -42dBc 32dBm 25deg VDS-10V