SPF-2086TKZ
Abstract: spf2086tkz SPF-2086TKZ applications 54-101 SPF-2086tk SPF2086TK hbt sot-86
Text: SPF-2086TKZ SPF-2086TKZ Low Noise pHEMT GaAs FET 0.1 GHz to 12 GHz Operation LOW NOISE pHEMT GaAs FET 0.1 GHz to 12 GHz OPERATION NOT FOR NEW DESIGNS RFMD Green, RoHS Compliant, Pb-Free Package: SOT-86 Product Description Features Si BiCMOS SiGe HBT 20 10
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SPF-2086TKZ
OT-86
EDS-101225
SPF-2086TKZ
spf2086tkz
SPF-2086TKZ applications
54-101
SPF-2086tk
SPF2086TK
hbt sot-86
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TC2181
Abstract: TC1101 0736 27319
Text: TRANSCOM TC2181 January 2002 Low Noise and High Dynamic Range Packaged GaAs FETs FEATURES • 0.5 dB Typical Noise Figure at 12 GHz PHOTO ENLARGEMENT • High Associated Gain: Ga = 12 dB Typical at 12 GHz • 18 dBm Typical Power at 12 GHz • 13 dB Typical Linear Power Gain at 12 GHz
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TC2181
TC2181
TC1101
ELECTRICAL98
0736
27319
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE722S01 C to X BAND LOW NOISE, HIGH-GAIN AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • Power gain: GS = 6.0 dB TYP. @ f = 12 GHz • Output power: PO 1 dB = 15 dBm TYP. @ f = 12 GHz • Noise figure, associated gain: NF = 0.9 dB TYP., Ga = 12 dB TYP. @ f = 4 GHz
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NE722S01
NE722S01-T1
NE722S01-T1B
NE722S01)
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9435 GM
Abstract: TC1201 9435 72 TRANSCOM TC1201 6526 89 18 8244-27 TC2201
Text: TC2201 REV.2_04/12/2004 Plastic Packaged Low Noise PHEMT GaAs FETs FEATURES • • • • • • • PHOTO ENLARGEMENT 1.5 dB Typical Noise Figure at 12 GHz High Associated Gain: Ga = 7 dB Typical at 12 GHz 21.5 dBm Typical Power at 12 GHz 8 dB Typical Linear Power Gain at 12 GHz
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TC2201
TC2201
TC1201
9435 GM
9435 72
TRANSCOM TC1201
6526 89 18
8244-27
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F5049
Abstract: siemens gaas fet 76 marking code SIEMENS gaas fet marking a CFY30 HL 050 118 31 04 FET marking code FET marking codes FET transistors with s-parameters Q62703-F97
Text: CFY 30 GaAs FET Datasheet * Low noise Fmin = 1.4 dB @ 4 GHz * High gain ( 11.5 dB typ. @ 4 GHz ) * For oscillators up to 12 GHz * For amplifiers up to 6 GHz
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Q62703-F97
OT-143
F5049
siemens gaas fet
76 marking code SIEMENS
gaas fet marking a
CFY30
HL 050 118 31 04
FET marking code
FET marking codes
FET transistors with s-parameters
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TRANSISTOR C 6090 lg
Abstract: TRANSISTOR C 6090 TC1101 8484 au
Text: TRANSCOM TC1101 January 2002 Low Noise and Medium Power GaAs FETs FEATURES • Low Noise Figure: PHOTO ENLARGEMENT NF = 0.5 dB Typical at 12 GHz • High Associated Gain: Ga = 12 dB Typical at 12 GHz • High Dynamic Range: 1 dB Compression Power P-1 = 18 dBm at 12 GHz
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TC1101
TC1101
TRANSISTOR C 6090 lg
TRANSISTOR C 6090
8484 au
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a970 transistor
Abstract: A970 MWT-A970 A973 mwt 971 transistor a970 A971 MwT-A9
Text: MwT-A9 18 GHz High Gain, Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns 75 FEATURES • IDEAL FOR HIGH DYNAMIC RANGE RECEIVER APPLICATIONS • 1.6 dB NOISE FIGURE AT 12 GHz • +24.5 dBm OUTPUT POWER AT 12 GHz • 9 dB SMALL SIGNAL GAIN AT 12 GHz
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4511 gm
Abstract: um 5506 gm 4511 AFM02N6-000 AFM02N6
Text: Low Noise GaAs MESFET Chip AFM02N6-000 • Low Noise Figure, 1.0 dB @ 12 GHz ■ Passivated Surface 100 ■ 0.25 µm Ti/Pd/Au Gates 200 ■ High MAG, >12 dB @ 12 GHz 300 ■ High Associated Gain, 9.5 dB @ 12 GHz 400 Dims µms : X = 400, Y = 620 Features 100
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AFM02N6-000
AFM02N6-000
6/99A
4511 gm
um 5506
gm 4511
AFM02N6
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transistor nec D78
Abstract: D78 NEC NEC D73 d3055 J100 J150 NE76000 transistor d176
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: Pm Low noise figure NF = 1.6 dB TYP. at f = 12 GHz High associated gain 450 57 Ga = 9.0 dB TYP. at f = 12 GHz DRAIN DRAIN VDS 5.0 V
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NE76000
transistor nec D78
D78 NEC
NEC D73
d3055
J100
J150
NE76000
transistor d176
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pseudomorphic HEMT
Abstract: CF003-03 Hemt transistor
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
CF003-03-000X
pseudomorphic HEMT
Hemt transistor
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Untitled
Abstract: No abstract text available
Text: GaAs Pseudomorphic HEMT Transistor July 2008 - Rev 19-Jul-08 CF003-03 Features Low Noise Figure 1 dB @ 12 GHz High Gain: 10 dB at 12 GHz P1dB Power: 20 dBm Wafer Qualification Procedure Customer Wafer Selection Available General Description Mimix CF003-03 GaAs-based transistor is a 600 um gate width,
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19-Jul-08
CF003-03
CF003-03
for-000X
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vp 3082
Abstract: AFM02N6-212 AFM02N6-213 MESFET
Text: Low Noise Packaged GaAs MESFET Chips AFM02N6-212, AFM02N6-213 Features 213 Drain • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz Source Source ■ High MAG, > 8.5 dB @ 12 GHz Gate Drain Source ■ 0.25 µm Ti/Pd/Au Gates ■ Passivated Surface
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AFM02N6-212,
AFM02N6-213
6/99A
vp 3082
AFM02N6-212
AFM02N6-213
MESFET
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DC TO 20GHZ RF AMPLIFIER MMIC
Abstract: Mach-Zehnder modulator Traveling Wave Amplifier DC-20 MAAPSM0015 VD196 dc to 12 GHz driver amplifier
Text: DC-20 GHz GaAs MMIC Amplifier Preliminary MAAPSM0015 Rev. 2.0 DC-20 GHz GaAs MMIC Amplifier Features ¢ ¢ ¢ ¢ ¢ ¢ ¢ Wide Frequency Range: DC-20 GHz On Chip Bias Network High Gain : 11 dB Gain Flatness: + 0.75 dB Typical Psat: 21 dBm Return Loss: 12 dB
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DC-20
MAAPSM0015
100mA
MAAPSM0015
DC TO 20GHZ RF AMPLIFIER MMIC
Mach-Zehnder modulator
Traveling Wave Amplifier
VD196
dc to 12 GHz driver amplifier
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sy 171
Abstract: diode sy 171 MwT-173
Text: MwT-1 12 GHz High Gain GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM FEATURES 50 • 10 dB GAIN AT 12 GHz • EXCELLENT FOR FEEDBACK AMPLIFIER APPLICATIONS 100 MHz TO 12 GHz • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 630 MICRON GATE WIDTH • CHOICE OF CHIP AND THREE PACKAGE TYPES
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CI 7422
Abstract: AFM02N6-000
Text: ESAlpha Low Noise GaAs MESFET Chip AFM02N6-000 Features • Low Noise Figure, 1.0 dB @ 12 GHz ■ High Associated Gain, 9.5 dB @ 12 GHz ■ High MAG, >12 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface Description 1 cm = 38.7 urn The AFM02N6-000 low noise GaAs MESFET chip has
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AFM02N6-000
AFM02N6-000
6/99A
CI 7422
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CF003
Abstract: CF003-01 CF003-02 CF003-03 CFC003
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ PjdB Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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CF003
CF003-01,
CF003-02
CF003-03
CF003-01
CFC003
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Untitled
Abstract: No abstract text available
Text: CF003 Series GaAs Pseudomorphic HEMT and MESFET Chips □ Low Noise Figure: 1.0 dB at 12 GHz □ High Gain: 10 dB at 12 GHz □ Pj{jg Power: +22 dBm at 12 GHz □ Wide Dynamic Range □ Active Layers Include: Pseudomorphic HEMT, Epitaxial and Ion Implanted
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CF003
CF003-03
CF003
CF003-01
n745D3
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SPF 455
Abstract: SPF-1576 SPF 455 H 5 SPF-1676
Text: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available
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SPF-1576,
SPF-1576
SPF 455
SPF 455 H 5
SPF-1676
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S8818
Abstract: JS8818-AS
Text: Low Noise GaAs FET Chip Form JS8818-AS FEATURES: LOW NOISE FIGURE 1.4 d B a tf = 12 GHz 2.1 d B a tf = 18 GHz • HIGH ASSOCIATED GAIN 10 dB at f = 12 GHz 7.5 dB at f = 18 GHz 0.3 Mm GATE LENGTH CHIP FORM HIGH MAXIMUM AVAILABLE GAIN 11 dB at f = 12 GHz 9.0 dB a t f = 18 GHz
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JS8818-AS
12GHz
18GHz
12GHz
RQR72SD
S8818
JS8818-AS
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Untitled
Abstract: No abstract text available
Text: DATA SHEET GaAs MES FET NE76000 C to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • CHIP DIMENSIONS Unit: //m Low noise figure NF = 1.6 dB TYP. at f = 12 GHz • High associated gain Ga = 9.0 dB TYP. at f = 12 GHz • Gate length: Lg = 0 .3 //m
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NE76000
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4511 gm
Abstract: No abstract text available
Text: Low Noise GaAs MESFET Chip AFM02N5-00 Dimensions in Microns Thickness = 100 Features 78 50 Low Noise Figure, 1.0 dB at 12 GHz I High Associated Gain, 9.5 dB at 12 GHz 50 ¿ U - J i _ 350 High MAG, > 12 dB at 12 GHz [50 125 0.25 u,m Ti/Pt/Au Gates Passivated Surface
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AFM02N5-00
AFM02N5-00
Sou01
4511 gm
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AFM02N5-55
Abstract: No abstract text available
Text: Low Noise Packaged GaAs MESFET ED Alpha m i m u T iir in iiiiiiii I iiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiiii ii iiir AFM02N5-55, AFM02N5-56 Features Drain Source • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz
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AFM02N5-55,
AFM02N5-56
AFM02N5-55
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Untitled
Abstract: No abstract text available
Text: Low Noise Packaged GaAs MESFET AFM02N&-212, AFM02N6-213 Features Drain • Low Noise Figure, 1.1 dB at 12 GHz ■ High Associated Gain, 8.0 dB at 12 GHz ■ High MAG, > 8.5 dB at 12 GHz ■ 0.25 ^im Ti/Pt/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFM02N
AFM02N6-213
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L to Ku Band Low Noise GaAs MESFET
Abstract: AFM02N6-212 AFM02N6-213 S-12 61770
Text: Low Noise Packaged GaAs MESFET Chips ESAlpha AFM02N6-212, AFM02N6-213 Features 213 • Low Noise Figure, 1.1 dB @ 12 GHz ■ High Associated Gain, 8.0 dB @ 12 GHz ■ High MAG, > 8.5 dB @ 12 GHz ■ 0.25 |im Ti/Pd/Au Gates ■ Passivated Surface ■ Low Cost Metal Ceramic Package
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AFM02N6-212,
6/99A
L to Ku Band Low Noise GaAs MESFET
AFM02N6-212
AFM02N6-213
S-12
61770
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