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    NEC Electronics Group NE722S01-T1

    RF SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 1-ELEMENT, X BAND, GALLIUM ARSENIDE, N-CHANNEL, METAL SEMICONDUCTOR FET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components NE722S01-T1 690
    • 1 $5.4
    • 10 $5.4
    • 100 $2.34
    • 1000 $2.16
    • 10000 $2.16
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    NE722S01 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE722S01 NEC NECs C TO x BAND N-CHANNEL GaAs MES FET Original PDF
    NE722S01-AZ NEC FET Transistor: C to x BAND LOW NOISE: HIGH-GAIN AMPLIFIER: C to x BAND OSC N-CHANNEL GaAs MESFET Original PDF
    NE722S01-T1 NEC C TO x BAND N-CHANNEL GaAs MESFET Original PDF
    NE722S01-T1 NEC L to x band N-channel GaAs MESFET. Original PDF
    NE722S01-T1-AZ NEC FET Transistor: C to x BAND LOW NOISE: HIGH-GAIN AMPLIFIER: C to x BAND OSC N-CHANNEL GaAs MESFET: Tape And Reel Original PDF
    NE722S01-T1B NEC C TO x BAND N-CHANNEL GaAs MESFET Original PDF
    NE722S01-T1B NEC L to x band N-channel GaAs MESFET. Original PDF
    NE722S01-T1B1 NEC NECs C TO x BAND N-CHANNEL GaAs MES FET Original PDF
    NE722S01-T1B-AZ NEC FET Transistor: C to x BAND LOW NOISE: HIGH-GAIN AMPLIFIER: C to x BAND OSC N-CHANNEL GaAs MESFET: Tape And Reel Original PDF

    NE722S01 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NONLINEAR MODEL NE722S01 CGD_PKG SCHEMATIC 0.001pF Ldx DRAIN Q1 Lgx GATE Rgx 1 ohms 0.5nH Rdx 1 ohms 0.71nH Lsx 0.13nH CGS_PKG 0.08pF CDS_PKG 0.1PF Rsx 0.01 ohms SOURCE FET NONLINEAR MODEL PARAMETERS Parameters Q1 Parameters Q1 VTO -2.24 RG 8 VTOSC RD ALPHA


    Original     		PDF NE722S01 001pF 2e-10 1e-14 3e-12 19e-12 92e-12 05e-12 150e-6 second2/2002

    Untitled

    Abstract: No abstract text available
    Text: DATA SHEET GaAs MES FET NE722S01 C to X BAND LOW NOISE, HIGH-GAIN AMPLIFIER C to X BAND OSC N-CHANNEL GaAs MES FET FEATURES • Power gain: GS = 6.0 dB TYP. @ f = 12 GHz • Output power: PO 1 dB = 15 dBm TYP. @ f = 12 GHz • Noise figure, associated gain: NF = 0.9 dB TYP., Ga = 12 dB TYP. @ f = 4 GHz


    Original     		PDF NE722S01 NE722S01-T1 NE722S01-T1B NE722S01)

    NE722S01

    Abstract: NEC Ga FET marking A mesfet lnb NE722S01-T1 NE722S01-T1B1
    Text: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz


    Original     		PDF NE722S01 NE722S01 noi39 24-Hour NEC Ga FET marking A mesfet lnb NE722S01-T1 NE722S01-T1B1

    NE722S01

    Abstract: nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf
    Text: NEC's C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 ± 0.2 • LOW NOISE/HIGH GAIN:


    Original     		PDF NE722S01 NE722S01 19e-12 92e-12 05e-12 2e-10 nec 151 NE722S01-T1 NE722S01-T1B1 mesfet lnb k BAND LOW PHASE gaAs FET NEC Ga FET marking Rf

    mesfet lnb

    Abstract: NE722S01 NE722S01-T1 NE722S01-T1B1
    Text: C TO X BAND N-CHANNEL GaAs MESFET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB comprehension): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN:


    Original     		PDF NE722S01 NE722S01 24-Hour mesfet lnb NE722S01-T1 NE722S01-T1B1

    X band low noise

    Abstract: mesfet lnb transistor GaAS marking 576 NE722S01 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12
    Text: C TO X BAND N-CHANNEL GaAs MES FET NE722S01 OUTLINE DIMENSION FEATURES • HIGH POWER GAIN: GS = 6 dB TYP at f = 12 GHz Units in mm PACKAGE OUTLINE SO1 • OUTPUT POWER (at 1 dB compression): 15 dB TYP at f = 12 GHz 2.0 – 0.2 • LOW NOISE/HIGH GAIN: NF = 0.9 dB TYP, Ga = 12 dB TYP at f = 4 GHz


    Original     		PDF NE722S01 NE722S01 X band low noise mesfet lnb transistor GaAS marking 576 NE722S01-T1 NE722S01-T1B1 lnb schematic k BAND LOW PHASE gaAs FET nec gaas fet marking lg s12

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		PDF R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic

    transistor NEC D 586

    Abstract: C10535E NE722S01 NE722S01-T1 NE722S01-T1B
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		PDF G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77

    nec b1007

    Abstract: T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G
    Text: California Eastern Laboratories Package Dimensions PART NUMBER DESCRIPTION NE68018 NEC part numbers are specified by die and package number. NE680 Die "18" Package PACKAGE MARKINGS NEC devices are marked with various indications which indicate part type, lot code year and month . Due to size constraints,


    Original     		PDF NE68018 NE680 UPA801TC UPA808TC UPA821TC UPA826TC UPA861TD UPA831TC UPA862TD UPA835TC nec b1007 T79 code marking C3206 marking s16 marking code C1H qfn marking t88 C3H marking NE02107 T79 marking C3206G

    marking code C1E SMD Transistor

    Abstract: TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817
    Text: RF & Microwave Device Overview 2003 NEC Electronics Europe GmbH Oberrather Str. 4 40472 Düsseldorf, Germany Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 - Podbielskistr. 164 30177 Hannover, Germany Tel. (05 11) 3 34 02-0 Fax (05 11) 3 34 02-34 - Arabellastr. 17


    Original     		PDF P14740EE5V0PF00 marking code C1E SMD Transistor TRANSISTOR SMD MARKING CODE s01 FMCW Radar transistor smd c1y NE92039 g2b 6-pin smd NE582M03 NE3210SO1 smd transistor g1-L smd code marking NEC 817

    UAA 1006

    Abstract: manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71
    Text: NEC Offices NEC Electronics Europe GmbH Oberrather Str. 4 D-40472 Düsseldorf, Tel. (02 11) 65 03 01 Fax (02 11) 65 03-3 27 NEC Electronics Italiana S.R.L. Via Fabio Filzi, 25A I-20124 Milano Tel. (02) 66 75 41 Fax (02) 66 75 42 99 NEC Electronics (Germany) GmbH


    Original     		PDF D-40472 I-20124 I-00139 D-30177 GB-MK14 D-81925 S-18322 F-78142 E-28007 UAA 1006 manual* cygnus sl 5000 transistor marking T79 ghz PC1658G NEC Ga FET marking code T79 gaas fet T79 pc1658 MC-7712 2SC5431 NEC U71