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    FQU8P10TU Search Results

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    FQU8P10TU Price and Stock

    onsemi FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    DigiKey FQU8P10TU Tube
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    Newark FQU8P10TU Bulk 530 1
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    Rochester Electronics FQU8P10TU 43,870 1
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    Flip Electronics FQU8P10TU 14,136
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    Rochester Electronics LLC FQU8P10TU

    POWER FIELD-EFFECT TRANSISTOR, 6
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    DigiKey FQU8P10TU Bulk 745
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    Flip Electronics FQU8P10TU

    MOSFET P-CH 100V 6.6A IPAK
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    DigiKey FQU8P10TU Bulk 2,000
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    Fairchild Semiconductor Corporation FQU8P10TU

    FQU8P10 - Power Field-Effect Transistor, 6.6A, 100V, 0.53ohm, P-Channel, MOSFET, TO-251
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    Rochester Electronics FQU8P10TU 94,502 1
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    ComSIT USA FQU8P10TU 2,240
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    FQU8P10TU Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FQU8P10TU Fairchild Semiconductor 100V P-Channel QFET Original PDF

    FQU8P10TU Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 mΩ Description Features • -6.6 A, -100 V, RDS on = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary


    Original     		PDF FQD8P10 FQU8P10

    FQU8P10TU

    Abstract: No abstract text available
    Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		PDF FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU