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onsemi FQU8P10TU MOSFET P-CH 100V 6.6A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU8P10TU	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	FQU8P10TU	Bulk	530		1	1 $0.487 10 $0.487 100 $0.447 1000 $0.412 10000 $0.412	Buy Now
Rochester Electronics	FQU8P10TU		43,870		1	1 $0.3875 10 $0.3875 100 $0.3643 1000 $0.3294 10000 $0.3294	Buy Now
Flip Electronics	FQU8P10TU		14,136			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Rochester Electronics LLC FQU8P10TU POWER FIELD-EFFECT TRANSISTOR, 6
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU8P10TU	Bulk			745	1 - 10 - 100 - 1000 $0.4 10000 $0.4	Buy Now
Flip Electronics FQU8P10TU MOSFET P-CH 100V 6.6A IPAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQU8P10TU	Bulk			2,000	1 - 10 - 100 - 1000 - 10000 $0.34	Buy Now
Fairchild Semiconductor Corporation FQU8P10TU FQU8P10 - Power Field-Effect Transistor, 6.6A, 100V, 0.53ohm, P-Channel, MOSFET, TO-251
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	FQU8P10TU		94,502		1	1 $0.3875 10 $0.3875 100 $0.3643 1000 $0.3294 10000 $0.3294	Buy Now
ComSIT USA	FQU8P10TU		2,240			1 - 10 - 100 - 1000 - 10000 -	Get Quote

FQU8P10 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
FQU8P10		Fairchild Semiconductor	100 V P-Channel MOSFET		Original	PDF
FQU8P10		Fairchild Semiconductor	100V P-Channel MOSFET		Original	PDF
FQU8P10TU		Fairchild Semiconductor	100V P-Channel QFET		Original	PDF

FQU8P10 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
FQD8P10 Abstract: FQU8P10 Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V, FQU8P10
FQD8P10 Abstract: FQU8P10 Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V, FQU8P10
Untitled Abstract: No abstract text available Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce	Original	PDF	FQD8P10 FQU8P10
FQD8P10 Abstract: No abstract text available Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce	Original	PDF	FQD8P10 FQU8P10 FQU8P10
Untitled Abstract: No abstract text available Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V, FQD8P10TM FQD8P10TF O-252
Untitled Abstract: No abstract text available Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V,
FQD8P10 Abstract: FQU8P10 Text: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V, FQU8P10
Untitled Abstract: No abstract text available Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET -100 V, -6.6 A, 530 mΩ Description Features • -6.6 A, -100 V, RDS on = 530 mΩ (Max) @ VGS = -10 V, ID = -3.3 A This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary	Original	PDF	FQD8P10 FQU8P10
Untitled Abstract: No abstract text available Text: FQD8P10 / FQU8P10 P-Channel QFET MOSFET - 100 V, - 6.6 A, 530 m Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce	Original	PDF	FQD8P10 FQU8P10
FQU8P10TU Abstract: No abstract text available Text: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to	Original	PDF	FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU
thermistor KSD201 Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp Text: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™	Original	PDF
FLMP SuperSOT-6 Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80 Text: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1	Original	PDF	SC70-6 SC75-6 SuperSOTTM-3/SOT-23 Power247TM, FLMP SuperSOT-6 Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
FQPF*7N65C APPLICATIONS Abstract: bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237 Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	UF4003. UF4004. UF4005. UF4006. UF4007. USB10H. USB1T1102 USB1T11A. vKA75420M W005G FQPF*7N65C APPLICATIONS bc548 spice model bf494 spice model spice model bf199 LM3171 BC517 spice model bc547 spice model BF494 spice MOC3043-M spice model SPICE model BC237
IRFU210A Abstract: IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL Text: Discrete MOSFET TO-251 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-251(IPAK) N-Channel FDU3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDU6512A 20 Single - 0.021 0.031	Original	PDF	O-251 O-251 FDU3706 FDU6512A ISL9N308AD3 ISL9N312AD3 ISL9N306AD3 FDU6644 FDU6680A FDU7037P06 IRFU210A IRFU230A FDU3706 FDU6030BL FDU6512A FDU6612A FDU6644 FDU6680A FDU6692 FDU7030BL

fairchild mosfet selection guide Abstract: FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60 Text: Q-FETTM Line Card Fairchild Power MOSFETs QFETTM Line Card Overview Fairchild Semiconductor, a leading innovator in the design and manufacture of high-performance semiconductors, introduces QFETTM, an advanced technology for power MOSFETs. QFETTM Optoelectronics	Original	PDF	Power247TM, fairchild mosfet selection guide FQP27P06 FQA6N80 FQP2N90 fairchild korea FQP17P06 FQPF*3n60 FQA7N80 fairchild p channel mosfet FQA19N60
thermistor KSD201 Abstract: pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd Text: Fairchild PSG.book Page i Wednesday, July 28, 2004 11:12 AM Fairchild Semiconductor Product Catalog Rev. 1 Analog & Mixed Signal Discrete Power Interface & Logic Microcontrollers Optoelectronics RF Power Front Matter.fm Page ii Monday, August 2, 2004 10:09 AM	Original	PDF	TS-16949 ISO-14001, thermistor KSD201 pin configuration NPN transistor BC548 pin configuration transistor BC547 smd packaging FQPF*7N65C APPLICATIONS BC547 sot package sot-23 pin configuration pnp smd transistor BC557 DIODE 1N4148 LL-34 pin configuration NPN transistor BC547 BC557 sot-23 BC547 smd
FQPf10N60C Abstract: FQPF10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF5n50c IRF650 FQA90N08 Text: Discrete BGA BVDSS Min. V Config. 20 RDS(ON) Max (Ω) @ VGS = 10V 4.5V 2.5V 1.8V Qg Typ. (nC) @VGS = 5V Single – 0.027 0.039 – 7 6 1.7 20 Single – 0.018 0.03 – 11 7.5 1.6 FDZ201N 20 Single – 0.018 0.03 – 11 9 2 FDZ209N 60 Single – 0.08@5V	Original	PDF	FDZ201N FDZ209N FDZ2553N FDZ2553NZ FDZ2551N FDZ7064N SFF9140 FQAF47P06 SSF10N60B SSF7N60B FQPf10N60C FQPF10n20c FQPF10N20C FQP17P06 fqpf6n80 FQP630 equivalent FQU17P06 FQPF5n50c IRF650 FQA90N08