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KEMET Corporation EB2-12NU RELAY GEN PURPOSE DPDT 1A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EB2-12NU	Tube	4,166		1	1 $2.72 10 $2.373 100 $2.10013 1000 $1.81059 10000 $1.64729	Buy Now
Mouser Electronics	EB2-12NU		2,870			1 $2.27 10 $2.13 100 $1.89 1000 $1.31 10000 $1.24	Buy Now
Newark	EB2-12NU	Bulk			3,600	1 - 10 - 100 - 1000 - 10000 $1.44	Buy Now
Avnet Abacus	EB2-12NU			15 Weeks	3,600	1 - 10 - 100 - 1000 - 10000 -	Buy Now
KEMET Corporation EB2-12NU-L RELAY GEN PURPOSE DPDT 1A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EB2-12NU-L	Cut Tape	4,166		1	1 $2.85 10 $2.491 100 $2.1759 1000 $2.06192 10000 $2.06192	Buy Now
	EB2-12NU-L	Digi-Reel	4,166		1	1 $2.85 10 $2.491 100 $2.1759 1000 $2.06192 10000 $2.06192	Buy Now
	EB2-12NU-L	Reel	1,500		750	1 - 10 - 100 - 1000 $1.93652 10000 $1.72738	Buy Now
Avnet Americas	EB2-12NU-L	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.31074	Buy Now
Mouser Electronics	EB2-12NU-L		2,996			1 $2.33 10 $2.15 100 $1.72 1000 $1.34 10000 $1.27	Buy Now
Verical	EB2-12NU-L		1,500		1,500	1 - 10 - 100 - 1000 - 10000 $1.96	Buy Now
	EB2-12NU-L		1,397		4	1 - 10 $1.592 100 $1.592 1000 $1.592 10000 $1.592	Buy Now
Arrow Electronics	EB2-12NU-L	Cut Strips	1,397	99 Weeks	1	1 - 10 - 100 $1.567 1000 $1.491 10000 $1.491	Buy Now

Newark	EB2-12NU-L	Reel			1,500	1 $1.84 10 $1.84 100 $1.84 1000 $1.84 10000 $1.51	Buy Now
Onlinecomponents.com	EB2-12NU-L		1,500			1 - 10 - 100 - 1000 - 10000 $1.99	Buy Now
Bristol Electronics	EB2-12NU-L		35		3	1 - 10 $2.464 100 $1.232 1000 $1.232 10000 $1.232	Buy Now
	EB2-12NU-L		3			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Quest Components	EB2-12NU-L		28			1 $3.3 10 $2.2 100 $1.65 1000 $1.65 10000 $1.65	Buy Now
KEMET Corporation EB2-12TNU-L RELAY GEN PURPOSE DPDT 1A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EB2-12TNU-L	Cut Tape	1,500		1	1 $3.47 10 $3.035 100 $2.6511 1000 $2.5122 10000 $2.5122	Buy Now
	EB2-12TNU-L	Reel	1,500		750	1 - 10 - 100 - 1000 $1.88417 10000 $1.72262	Buy Now
Mouser Electronics	EB2-12TNU-L		1,643			1 $2.85 10 $2.67 100 $2.14 1000 $1.66 10000 $1.58	Buy Now
Newark	EB2-12TNU-L	Reel			1,500	1 $2.28 10 $2.28 100 $2.28 1000 $2.28 10000 $1.88	Buy Now
KEMET Corporation EB2-12SNU-L RELAY GEN PURPOSE DPDT 1A 12V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	EB2-12SNU-L	Reel			1,500	1 - 10 - 100 - 1000 - 10000 $1.66301	Buy Now
Mouser Electronics	EB2-12SNU-L					1 - 10 - 100 - 1000 $1.66 10000 $1.66	Get Quote
Newark	EB2-12SNU-L	Reel			1,500	1 $1.94 10 $1.94 100 $1.94 1000 $1.94 10000 $1.6	Buy Now
Skyworks Solutions Inc 531EB212M500DG XTAL OSC XO 212.5000MHZ LVPECL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	531EB212M500DG				50	1 - 10 - 100 $13.4754 1000 $13.4754 10000 $13.4754	Buy Now
Mouser Electronics	531EB212M500DG					1 $15.41 10 $14.44 100 $13.47 1000 $13.2 10000 $13.2	Get Quote
Richardson RFPD	531EB212M500DG				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

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EB212 Datasheets (58)

Part	Manufacturer	Description	Datasheet Type	PDF
EB2-12	IMO Industrial Control	DPDT Surface Mount Signal Relay	Original	PDF
EB212	Motorola	Using Data Sheet Impedances for RF LDMOS Devices	Original	PDF
EB2-12	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12-L	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NU	IMO Industrial Control	DPDT Surface Mount Signal Relay	Original	PDF
EB2-12NU	KEMET	Relays - Signal Relays, Up to 2 Amps - RELAY GEN PURPOSE DPDT 1A 250V	Original	PDF
EB2-12NU	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUE	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUE-L	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUE-R	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUH	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUH-L	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUH-R	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NU-L	KEMET	Relays - Signal Relays, Up to 2 Amps - RELAY GEN PURPOSE DPDT 1A 250V	Original	PDF

EB2-12NUL	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NU-L	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUL-L	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NUL-R	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12NU-R	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF
EB2-12-R	NEC	COMPACT AND LIGHT WEIGHT SURFACE MOUNTING TYPE	Original	PDF

EB212 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Motorola transistors MRF Abstract: motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180 Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by EB212/D SEMICONDUCTOR ENGINEERING BULLETIN EB212 Using Data Sheet Impedances for RF LDMOS Devices Prepared by: Darin Wagner Motorola Semiconductor Products Sector Freescale Semiconductor, Inc.	Original	PDF	EB212/D EB212 Motorola transistors MRF motorola MRF agilent ads balun LDMOS push pull EB212 MRF19125 MRF21180
agilent ads balun Abstract: EB212 MRF19125 MRF21180 J493 advanced design system Text: Freescale Semiconductor Engineering Bulletin EB212 Rev. 0, 1/2004 Using Data Sheet Impedances for RF LDMOS Devices By: Darin Wagner INTRODUCTION This document explains the format used by Freescale for presenting LDMOS impedance information for both single - ended and push - pull devices on RF Power data	Original	PDF	EB212 agilent ads balun EB212 MRF19125 MRF21180 J493 advanced design system
12065G105AT2A Abstract: j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18125BH Rev. 0, 11/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S18125BHR3 MRF7S18125BHSR3 Designed for GSM and GSM EDGE base station applications with	Original	PDF	MRF7S18125BH MRF7S18125BHR3 MRF7S18125BHSR3 MRF7S18125BHR3 12065G105AT2A j292 MRF7S18125 F 365 R A114 A115 AN1955 C101 JESD22 RF35
MRF6S21140HR3 Abstract: MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors Text: Freescale Semiconductor Technical Data Document Number: MRF6S21140H Rev. 5, 2/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF6S21140H MRF6S21140HR3 MRF6S21140HSR3 MRF6S21140HSR3 AN1955 MRF6S21140H D2080 Nippon capacitors
mrfe6vp5600hs Abstract: MRFE6VP5600H Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6V2150N Rev. 0, 2/2007 RF Power Field - Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6V2150NR1 MRF6V2150NBR1 Designed primarily for CW large - signal output and driver applications with	Original	PDF	MRF6V2150N MRF6V2150NR1 MRF6V2150NBR1 MRF6V2150NR1
Untitled Abstract: No abstract text available Text: Document Number: AFT26P100−4WS Rev. 0, 5/2013 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N−Channel Enhancement−Mode Lateral MOSFET This 22 watt symmetrical Doherty RF power LDMOS transistor is designed for cellular base station applications requiring very wide instantaneous	Original	PDF	AFT26P100â
IrL 1540 N Abstract: A114 A115 AN1955 C101 JESD22 MRF8S18120HR3 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g Text: Freescale Semiconductor Technical Data Document Number: MRF8S18120H Rev. 0, 9/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF8S18120HR3 MRF8S18120HSR3 Designed for GSM and GSM EDGE base station applications with frequencies from 1805 to 1880 MHz. Can be used in Class AB and Class C for	Original	PDF	MRF8S18120H MRF8S18120HR3 MRF8S18120HSR3 MRF8S18120HR3 IrL 1540 N A114 A115 AN1955 C101 JESD22 MRF8S18120HSR3 C3225X7R2A225KT IrL 1540 g
303 2170 001 Abstract: ATC100B0R6BT500XT J637 MRF8S21200HR6 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453 Text: Freescale Semiconductor Technical Data Document Number: MRF8S21200H Rev. 1, 11/2009 RF Power Field Effect Transistors MRF8S21200HR6 MRF8S21200HSR6 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA and LTE base station applications with frequencies	Original	PDF	MRF8S21200H MRF8S21200HR6 MRF8S21200HSR6 MRF8S21200HR6 303 2170 001 ATC100B0R6BT500XT J637 MRF8S21200HSR6 A114 A115 AN1955 JESD22 j453
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5300N Rev. 0, 3/2014 RF Power LDMOS Transistors MRFE6VP5300NR1 MRFE6VP5300GNR1 High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR	Original	PDF	MRFE6VP5300N MRFE6VP5300NR1 MRFE6VP5300GNR1 MRFE6VP5300NR1
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT09S200W02N Rev. 0, 4/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 56 W RF power LDMOS transistors are designed for cellular base station applications requiring very wide instantaneous bandwidth capability	Original	PDF	AFT09S200W02N 716lidated AFT09S200W02NR3 AFT09S200W02GNR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: AFT21S230S_232S Rev. 3, 3/2014 RF Power LDMOS Transistors N-Channel Enhancement-Mode Lateral MOSFETs These 50 W RF power LDMOS transistors are designed for cellular base station applications covering the frequency range of 2110 to 2170 MHz.	Original	PDF	AFT21S230S AFT21S230SR3 AFT21S230-12SR3 AFT21S232SR3 AFT21S230SR3 AFT21S230-12SR3
ATC200B103KT50X Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP61K25H Rev. 4.1, 3/2014 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace	Original	PDF	MRFE6VP61K25H MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HR6 MRFE6VP61K25HR5 MRFE6VP61K25HSR5 MRFE6VP61K25GSR5 ATC200B103KT50X
ATC 1084 Abstract: MW7IC18100NR1 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100GNR1 MW7IC18100NBR1 Text: Freescale Semiconductor Technical Data Document Number: MW7IC18100N Rev. 1, 6/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC18100N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 2050 MHz. This multi - stage	Original	PDF	MW7IC18100N MW7IC18100N MW7IC18100NR1 MW7IC18100GNR1 MW7IC18100NBR1 ATC 1084 MA3531 A114 A115 AN1977 AN1987 JESD22 MW7IC18100NBR1

mosfet j172 Abstract: GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X Text: Freescale Semiconductor Technical Data Document Number: MRF8S9200N Rev. 0, 8/2009 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 920 to 960 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8S9200N MRF8S9200NR3 mosfet j172 GRM55DR61H106K atc100b6r8 J263 J181 ATC100B1R2BT500XT MRF8S9200N MRF8S9200NR3 j139 ATC100B100JT500X
MRF1550 Abstract: FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N MRF1550NT1 VK200 Text: Freescale Semiconductor Technical Data Document Number: MRF1550N Rev. 13, 6/2008 RF Power Field Effect Transistors MRF1550NT1 MRF1550FNT1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for broadband commercial and industrial applications with frequencies to 175 MHz. The high gain and broadband performance of these devices	Original	PDF	MRF1550N MRF1550NT1 MRF1550FNT1 MRF1550NT1 MRF1550 FM LDMOS freescale transistor MRF1550N UHF AN721 MRF1550FNT1 AN215A S11 zener diode MRF1550N VK200
MCR50V107M8X11 Abstract: 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HR3 MRF7S19080HSR3 CRCW120610R0FKTA Text: Freescale Semiconductor Technical Data Document Number: MRF7S19080H Rev. 0, 1/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19080HR3 MRF7S19080HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19080H MRF7S19080HR3 MRF7S19080HSR3 MRF7S19080HR3 MCR50V107M8X11 81c79 A114 A115 AN1955 C101 JESD22 MRF7S19080HSR3 CRCW120610R0FKTA
100B101JW Abstract: 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 Text: Freescale Semiconductor Technical Data Document Number: MRF7S18170H Rev. 0, 10/2006 RF Power Field Effect Transistors MRF7S18170HR3 MRF7S18170HSR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1805 to	Original	PDF	MRF7S18170H MRF7S18170HR3 MRF7S18170HSR3 MRF7S18170HR3 DataMRF7S18170H 100B101JW 232272461009 465B A114 A115 AN1955 JESD22 MRF7S18170H MRF7S18170HSR3
J294 Abstract: 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HS Text: Freescale Semiconductor Technical Data Document Number: MRF7S19170H Rev. 0, 10/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S19170HR3 MRF7S19170HSR3 Designed for CDMA base station applications with frequencies from 1930 to	Original	PDF	MRF7S19170H MRF7S19170HR3 MRF7S19170HSR3 MRF7S19170HR3 DataMRF7S19170H J294 200B104MW 465B A114 A115 AN1955 JESD22 MRF7S19170HSR3 MRF7S19170HS
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF8P20161HS Rev. 0, 10/2010 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for CDMA base station applications with frequencies from 1880 to 2025 MHz. Can be used in Class AB and Class C for all typical cellular base	Original	PDF	MRF8P20161HS MRF8P20161HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S27050H Rev. 1, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S27050HR3 MRF6S27050HSR3 Designed for CDMA base station applications with frequencies from 2500 to	Original	PDF	MRF6S27050H MRF6S27050HR3 MRF6S27050HSR3 MRF6S27050HR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MD7P19130H Rev. 2, 8/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be	Original	PDF	MD7P19130H MD7P19130HR3 MD7P19130HSR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRFE6S9205H Rev. 0, 10/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRFE6S9205HR3 MRFE6S9205HSR3 Designed for broadband commercial and industrial applications with	Original	PDF	MRFE6S9205H MRFE6S9205HR3 MRFE6S9205HSR3 MRFE6S9205HR3
Untitled Abstract: No abstract text available Text: Freescale Semiconductor Technical Data Document Number: MRF6S19140H Rev. 5, 5/2007 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. Suitable for TDMA, CDMA and multicarrier amplifier	Original	PDF	MRF6S19140H MRF6S19140HR3 MRF6S19140HSR3

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EB212 Price and Stock

KEMET Corporation EB2-12NU

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Skyworks Solutions Inc 531EB212M500DG

EB212 Datasheets (58)

EB212 Datasheets Context Search

Motorola transistors MRF

agilent ads balun

12065G105AT2A

MRF6S21140HR3

mrfe6vp5600hs

Untitled

Untitled

IrL 1540 N

303 2170 001

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ATC200B103KT50X

ATC 1084

mosfet j172

MRF1550

MCR50V107M8X11

100B101JW

J294

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