c4d02120
Abstract: C4D02120E CSD04060 D0212
Text: C4D02120E–Silicon Carbide Schottky Diode VRRM = 1200 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • Package 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
1200-Volt
O-252-2
C4D02120E
C4D02ody
c4d02120
CSD04060
D0212
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SMA905
Abstract: LDD100-3 ntc pt100 limo FB laser LDD100 SMA905 connector SMA905 CONNECTOR DRAWING diode e 2060 1025-1080nm DIODE 809
Text: LIMO FB Series pump HIGH-POWER DIODE LASER • • • • • • • Optical data High brightness laser for, pump applications SMA905 Plug & Play connector for optical fibres Compact dimensions Passively cooled Dual temperature sensor (NTC/PT100) Optional monitor diode
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SMA905
NTC/PT100)
SMA905
LDD100-3
ntc pt100
limo FB laser
LDD100
SMA905 connector
SMA905 CONNECTOR DRAWING
diode e 2060
1025-1080nm
DIODE 809
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APT100S20B
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode APT100S20B 200V 120A 1 2 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics • Low Losses
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APT100S20B
O-247
APT100S20B
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SIE726DF
Abstract: No abstract text available
Text: New Product SiE726DF Vishay Siliconix N-Channel 30-V D-S MOSFET with Schottky Diode FEATURES PRODUCT SUMMARY • SkyFET Monolithic TrenchFET Power MOSFET and Schottky Diode RoHS • Ultra Low Thermal Resistance Using COMPLIANT Top-Exposed PolarPAK® Package for
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SiE726DF
18-Jul-08
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APT100S
Abstract: No abstract text available
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK APT100S20B APT100S20S 1 2 200V 200V 120A 120A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Soft Recovery Characteristics
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APT100S20B
APT100S20S
O-247
APT100S
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Untitled
Abstract: No abstract text available
Text: C3D04060E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 600 V = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060E
600-Volt
O-252-2
C3D04060E
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C3D04060E
Abstract: CREE C3D04060
Text: C3D04060E–Silicon Carbide Schottky Diode Z-REC RECTIFIER VRRM = 600 V IF =4A TC < 160 °C Qc Features • • • • • • • • = 8.5 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04060E
600-Volt
O-252-2
C3D04060E
C3D04060
CREE C3D04060
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Hitachi DSA002711
Abstract: No abstract text available
Text: HL6726MG Visible High Power Laser Diode Description The HL6726MG is a 0.68µm band AlGaInP laser diode LD with a multi-quantum well (MQW) structure. It is suitable as a light source for large capacity optical disc memories and various other types of optical equipment.
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HL6726MG
HL6726MG
695nm
HL6726MG:
Hitachi DSA002711
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C4D02120E
Abstract: No abstract text available
Text: C4D02120E VRRM = 1200 V Silicon Carbide Schottky Diode IF TC=135˚C = 7 A Z-Rec Rectifier Qc Features • • • • • • 12 nC Package 1.2kV Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation
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C4D02120E
O-252-2
C4D02120E
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Untitled
Abstract: No abstract text available
Text: C3D03065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 5.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 6.7 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03065E
650-Volt
O-252-2
C3D03065E
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Untitled
Abstract: No abstract text available
Text: C3D04065E VRRM = Silicon Carbide Schottky Diode IF TC=135˚C = 7.5 A Z-Rec Rectifier Qc Features • • • • • • • • 650 V = 8.5 nC Package 650-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D04065E
650-Volt
O-252-2
C3D04065E
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marking D03
Abstract: No abstract text available
Text: C3D04060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 4 A Qc = 8.5 nC Features • • • • • • • • Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D04060E
600-Volt
O-252-2
C3D04060E
marking D03
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C3D03060
Abstract: C3D03060E 175C DIODE MARKING 534 C3D03
Text: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
C3D03060
175C
DIODE MARKING 534
C3D03
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C4D02120E
Abstract: c4d02120
Text: C4D02120E–Silicon Carbide Schottky Diode Z-Rec Rectifier Features • • • • • • IF, TC<135˚C = 6.9 A Qc = 15 nC 1200-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current High-Frequency Operation Temperature-Independent Switching Behavior
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C4D02120E
1200-Volt
O-252-2
C4D02120E
c4d02120
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rectifier diode 3A
Abstract: No abstract text available
Text: C3D03060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 3 A Qc = 6.7 nC Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D03060E
O-252-2
600-Volt
rectifier diode 3A
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C3D02060
Abstract: TO-220 package thermal resistance C3D02060E 175C CSD10060
Text: C3D02060E–Silicon Carbide Schottky Diode VRRM = 600 V Z-Rec Rectifier IF AVG = 2 A Qc Features • • • • • • • • = 4.8 nC Package 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current Zero Forward Recovery Voltage
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C3D02060E
600-Volt
O-252-2
C3D02060E
C3D02060
TO-220 package thermal resistance
175C
CSD10060
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C3D02060
Abstract: No abstract text available
Text: C3D02060E VRRM = Silicon Carbide Schottky Diode 600 V IF TC=135˚C = 4 A Z-Rec Rectifier Qc = Features Package • • • • • • • • TO-252-2 600-Volt Schottky Rectifier Optimized for PFC Boost Diode Application Zero Reverse Recovery Current
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C3D02060E
O-252-2
600-Volt
C3D02060E
C3D02060
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TO63
Abstract: 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629
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f\15i5TDR
2N3773
N5629
N5630
2N5631
2N6259
2N6359
2N3237
N3597
2N3598
TO63
2N3599
2N3772
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2N4039
Abstract: 2N4303 2N4304 t018 transistor T018 2N4417 t071 uhf vhf amplifier 2N4038 2N4221
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2N4304
t018 transistor
T018
2N4417
t071
uhf vhf amplifier
2N4221
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2N4303
Abstract: 2N3437 2n3866 noise 2N5566 2N4039 2N4304 2N4393 uhf vhf amplifier UHF UHF Transistors BF161
Text: DIODE TRA NS I S T O R CO INC 50 4 0 3 5 2 JJZ JJ* GDDG14M •=] DIODE TRANSISTOR CO.,ll\IC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 SILICON FIELD EFFECT TRANSISTORS— N— CHANNEL DEVICES
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DQD0144
2N3069
2N4038
2N4339
2N3436
2N4039
2N4391
2N3437
2N4091
2N4392
2N4303
2n3866 noise
2N5566
2N4304
2N4393
uhf vhf amplifier
UHF UHF Transistors
BF161
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2N4211
Abstract: TO63 2N3237 2N3598 2N3599 2N3772 2N3773 2N5631 2N6259 2N6359
Text: DIODE TRANSISTOR CO INC fl4 DE 1 5640352 00G013Ö 3 ÿ*. J 3 - û DIODE TB<ar\J5J5TQR CO. INC. (201 686-0400 »Telex: 139-385 • Outside NY & N J area call TO LL F R E E 800-526-4581 FAX No. 201-575-5863 Device Type hFE VCEO Max(V) Mln/Max 2N3773 2N5629
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f\15i5TDR
2N3773
N5629
N5630
2N5631
2N6259
2N6359
2N3237
N3597
2N3598
2N4211
TO63
2N3599
2N3772
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2N3214
Abstract: TO37 2N2283 2N2282 TO13 diode e 2060 MT28 2n1755 2N1043 2N1044
Text: DIODE TRANSISTOR CO INC "ai 28483 52 DIODE T R A N S I S T O R CO INC DE~|efli|fl35E O O D D i n 0 I " 84D 00119 D T- J 5- o7 D1QDE TPidf\15J5TQPi CO., INC. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201*575-5883
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afl4fl352
DDD0111
TMI\I515T0R
Tc-25Â
2N2668
2N2669
2N2670
2N1042
2N1043
MT-27
2N3214
TO37
2N2283
2N2282
TO13
diode e 2060
MT28
2n1755
2N1044
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transistor 3504 npn
Abstract: 2N3742 2N3867 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152
Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803
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Efl463S2
TMI\I515TQR
rc-25Â
2N3867
2N3868
2N5147
2N5149
2N5151
2N5153
2N5148
transistor 3504 npn
2N3742
2N5150
2N5152
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2N3867
Abstract: 2N3868 2N5147 2N5148 2N5149 2N5150 2N5151 2N5152 2N5153 2N5154
Text: DIODE T R A N S I S T O R CO INC rnr m-aa/iu-a Ö3 5 2 D’IODE T R A N S I S T O R C Ö “INC DE 12fl4S355 OODOlBt. 0 04 84D 00136 DIODE TRANSISTOR CU.M C. 201 686-0400 • Telex: 139-385 • Outside NY & NJ area call T O LL FR EE 800-526-4581 FA X No. 201-575-5803
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Efl463S2
TMI\I515TQR
rc-25Â
2N3867
2N3868
2N5147
2N5149
2N5151
2N5153
2N5148
2N5150
2N5152
2N5154
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