APT30S20B
Abstract: APT20M36BLL APT30S20S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT30S20B APT30S20S 200V 200V 45A 45A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
|
Original
|
PDF
|
APT30S20B
APT30S20S
O-247
APT30S20B
APT20M36BLL
APT30S20S
|
APT54GA60B
Abstract: APT54GA60BD30 APT54GA60SD30 MIC4452 SD30
Text: APT54GA60BD30 APT54GA60SD30 600V High Speed PT IGBT TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is APT54GA60SD30 -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low gate charge and a greatly reduced ratio of Cres/Cies provide excellent noise
|
Original
|
PDF
|
APT54GA60BD30
APT54GA60SD30
APT54GA60B
APT54GA60BD30
APT54GA60SD30
MIC4452
SD30
|
APT36GA60B
Abstract: APT36GA60S MIC4452 c 1853
Text: APT36GA60B APT36GA60S 600V High Speed PT IGBT APT36GA60S TO -2 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved 47 D3PAK through leading technology silicon design and lifetime control processes. A reduced Eoff VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
|
Original
|
PDF
|
APT36GA60B
APT36GA60S
APT36GA60B
APT36GA60S
MIC4452
c 1853
|
APT20M36BLL
Abstract: APT60S20B APT60S20S
Text: 1 2 TO -24 7 1 - Cathode 2 - Anode Back of Case - Cathode D3PAK 1 2 APT60S20B APT60S20S 200V 200V 75A 75A 2 1 HIGH VOLTAGE SCHOTTKY DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS • Parallel Diode • Ultrafast Recovery Times • Low Losses
|
Original
|
PDF
|
APT60S20B
APT60S20S
O-247
APT20M36BLL
APT60S20B
APT60S20S
|
SD15
Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT
|
Original
|
PDF
|
APT36GA60BD15
APT36GA60SD15
SD15
APT36GA60B
APT36GA60BD15
APT36GA60SD15
MIC4452
400v 20A ultra fast recovery diode
J750
1800g
TF328
|
APT68GA60B
Abstract: APT68GA60S MIC4452
Text: APT68GA60B APT68GA60S 600V High Speed PT IGBT APT68GA60S TO POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
|
Original
|
PDF
|
APT68GA60B
APT68GA60S
APT68GA60B
APT68GA60S
MIC4452
|
APT1201R2BFLL
Abstract: APT1201R2SFLL APT1201R2BFLLG 1400G
Text: APT1201R2BFLL G APT1201R2SFLL(G) 1200V 12A 1.25 Ω POWER MOS 7 R BFLL FREDFET D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
|
Original
|
PDF
|
APT1201R2BFLL
APT1201R2SFLL
O-247
O-247
APT1201R2BFLLG
1400G
|
APT8043BLL
Abstract: APT8043SLL
Text: APT8043BLL APT8043SLL 800V POWER MOS 7 R MOSFET BLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT8043BLL
APT8043SLL
O-247
O-247
unles84
APT8043BLL
APT8043SLL
|
APT8052BFLL
Abstract: APT8052SFLL
Text: APT8052BFLL APT8052SFLL 800V 15A POWER MOS 7 R FREDFET 0.520Ω BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT8052BFLL
APT8052SFLL
O-247
O-247
Ratin78
APT8052BFLL
APT8052SFLL
|
APT10086BLC
Abstract: APT10086SLC
Text: APT10086BLC APT10086SLC 1000V 13A 0.860W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
|
Original
|
PDF
|
APT10086BLC
APT10086SLC
O-247
O-247
APT10086
APT10086BLC
APT10086SLC
|
APT5017
Abstract: APT5017BLC APT5017SLC
Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.
|
Original
|
PDF
|
APT5017BLC
APT5017SLC
O-247
O-247
APT5017
APT5017
APT5017BLC
APT5017SLC
|
APT64GA90B
Abstract: MIC4452 DIODE 76A
Text: APT64GA90B APT64GA90S 900V High Speed PT IGBT TO APT64GA90S POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is achieved -2 47 through leading technology silicon design and lifetime control processes. A reduced Eoff D3PAK VCE ON tradeoff results in superior efficiency compared to other IGBT technologies. Low
|
Original
|
PDF
|
APT64GA90B
APT64GA90S
APT64GA90B
MIC4452
DIODE 76A
|
mj 1504 transistor
Abstract: AN569 MTV32N20E SMD310 mj 1504 scheme
Text: MOTOROLA Order this document by MTV32N20E/D SEMICONDUCTOR TECHNICAL DATA Advance Information MTV32N20E TMOS E-FET. Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 200 VOLTS RDS on = 0.075 OHM N–Channel Enhancement–Mode Silicon Gate
|
Original
|
PDF
|
MTV32N20E/D
MTV32N20E
MTV32N20E/D*
mj 1504 transistor
AN569
MTV32N20E
SMD310
mj 1504 scheme
|
V 7271 U
Abstract: APT4012BVFR APT4012SVFR
Text: APT4012BVFR APT4012SVFR 400V POWER MOS V 0.120Ω 37A BVFR FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT4012BVFR
APT4012SVFR
O-247
O-247
APT4012BVFR
V 7271 U
APT4012SVFR
|
|
|
mj 1504 transistor
Abstract: mj 1504 scheme transistor mj 1504 Transistor motorola 418 of mj 1504 transistor MGV12N120D IGBT 0623
Text: MOTOROLA Order this document by MGV12N120D/D SEMICONDUCTOR TECHNICAL DATA Product Preview Data Sheet MGV12N120D Insulated Gate Bipolar Transistor with Anti-Parallel Diode N–Channel Enhancement Mode Silicon Gate IGBT & DIODE IN D3PAK 12 A @ 90°C 20 A @ 25°C
|
Original
|
PDF
|
MGV12N120D/D
MGV12N120D
MGV12N120D/D*
mj 1504 transistor
mj 1504 scheme
transistor mj 1504
Transistor motorola 418
of mj 1504 transistor
MGV12N120D
IGBT 0623
|
Untitled
Abstract: No abstract text available
Text: APT6040BVR APT6040SVR 600V 16A 0.400Ω Ω BVR POWER MOS V D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT6040BVR
APT6040SVR
O-247
O-247
|
diode 17a 400v
Abstract: No abstract text available
Text: APT6038BFLL APT6038SFLL 600V 17A 0.380Ω POWER MOS 7 R FREDFET BFLL D3PAK Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
|
Original
|
PDF
|
APT6038BFLL
APT6038SFLL
O-247
O-247
diode 17a 400v
|
APT8052BLL
Abstract: No abstract text available
Text: APT8052BLL APT8052SLL 800V 15A 0.520W POWER MOS 7TM BLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT8052BLL
APT8052SLL
O-247
O-247
APT8052BLL
|
ad 3830
Abstract: No abstract text available
Text: APT30M61BFLL APT30M61SFLL 300V 54A 0.061Ω POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT30M61BFLL
APT30M61SFLL
O-247
O-247
ad 3830
|
Untitled
Abstract: No abstract text available
Text: APT6035SVR 600V 18A 0.350Ω POWER MOS V D3PAK V® Power MOS is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®
|
Original
|
PDF
|
APT6035SVR
|
Untitled
Abstract: No abstract text available
Text: APT20M34BFLL APT20M34SFLL 200V 74A 0.034W POWER MOS 7TM FREDFET BFLL D3PAK Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON
|
Original
|
PDF
|
APT20M34BFLL
APT20M34SFLL
O-247
O-247
|
Thunderbolt IGBT
Abstract: No abstract text available
Text: APT60GT60BR_SR APT60GT60BR APT60GT60SR 600V Thunderbolt IGBT B T • High Freq. Switching to 150KHz • Low Tail Current • Ultra Low Leakage Current • Avalanche Rated • RBSOA and SCSOA Rated MAXIMUM RATINGS Symbol 24 D3PAK 7 C The Thunderbolt IGBT® is a new generation of high voltage power IGBTs.
|
Original
|
PDF
|
APT60GT60BR
APT60GT60BR
APT60GT60SR
150KHz
Thunderbolt IGBT
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by M TV10N100E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV10N 100E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TM OS POWER FET 10 AMPERES 1000 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
TV10N100E/D
TV10N
MTV10N100E/D
|
Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MTV32N25E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M TV32N 25E TMOS E-FET™ Power Field Effect Transistor D3PAK for Surface Mount TMOS POWER FET 32 AMPERES 250 VOLTS N-Channel Enhancement-Mode Silicon Gate
|
OCR Scan
|
PDF
|
MTV32N25E/D
TV32N
|
