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    APT36GA60SD15 Price and Stock

    Microchip Technology Inc APT36GA60SD15

    IGBT PT 600V 65A D3PAK
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    Mouser Electronics APT36GA60SD15 52
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    Newark APT36GA60SD15 Bulk 70
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    Future Electronics APT36GA60SD15 70
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    Microchip Technology Inc APT36GA60SD15 Tube 26 Weeks
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    Onlinecomponents.com APT36GA60SD15
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    TME APT36GA60SD15 1
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    NAC APT36GA60SD15 Tube 48
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    Master Electronics APT36GA60SD15
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    APT36GA60SD15 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT36GA60SD15 Microsemi Insulated Gate Bipolar Transistor - Power MOS 8; Package: D3; BV(CES) (V): 600; VCE(sat) (V): 2; IC (A): 36; Original PDF

    APT36GA60SD15 Datasheets Context Search

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    SD15

    Abstract: APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -2 47 achieved through leading technology silicon design and lifetime control processes. A D3PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 SD15 APT36GA60B APT36GA60BD15 APT36GA60SD15 MIC4452 400v 20A ultra fast recovery diode J750 1800g TF328

    439J

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15 APT36GA60SD15 439J

    Untitled

    Abstract: No abstract text available
    Text: APT36GA60BD15 APT36GA60SD15 600V High Speed PT IGBT TO APT36GA60SD15 POWER MOS 8 is a high speed Punch-Through switch-mode IGBT. Low Eoff is -24 7 achieved through leading technology silicon design and lifetime control processes. A D 3 PAK reduced Eoff - VCE ON tradeoff results in superior efficiency compared to other IGBT


    Original     		PDF APT36GA60BD15 APT36GA60SD15