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    APT5017 Price and Stock

    Microchip Technology Inc APT5017BVRG

    MOSFET N-CH 500V 30A TO247
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    Microchip Technology Inc APT5017SVRG

    MOSFET N-CH 500V 30A D3PAK
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    Microchip Technology Inc APT5017BVFRG

    MOSFET N-CH 500V 30A TO247
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    NAC APT5017BVFRG Tube 29
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    APT5017 Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT5017 Advanced Power Technology Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. Original PDF
    APT5017BLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5017BVFR Advanced Power Technology High voltage N-Channel enhancement mode power MOSFET Original PDF
    APT5017BVFR Microsemi Power MOS V FREDFET Original PDF
    APT5017BVFRG Microchip Technology MOSFET N-CH 500V 30A TO247 Original PDF
    APT5017BVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5017BVRG Microchip Technology MOSFET N-CH 500V 30A TO247 Original PDF
    APT5017HLL Unknown High Voltage, 500V 25A, MOS-FET N-Channel enhanced Original PDF
    APT5017SLC Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5017SVFR Microsemi Power MOS V FREDFET Original PDF
    APT5017SVR Advanced Power Technology N-Channel enhancement mode power MOSFET Original PDF
    APT5017SVRG Microchip Technology MOSFET N-CH 500V 30A D3PAK Original PDF

    APT5017 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    APT5017

    Abstract: APT5017BLC APT5017SLC
    Text: APT5017BLC APT5017SLC 500V 30A 0.170W BLC POWER MOS VITM D3PAK Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5017BLC APT5017SLC O-247 O-247 APT5017 APT5017 APT5017BLC APT5017SLC

    APT5017

    Abstract: APT5017HLL
    Text: APT5017HLL 500V 25A 0.170W POWER MOS 7 MOSFET ® Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT5017HLL O-258 O-258 APT5017 APT5017HLL

    APT5017BVFR

    Abstract: No abstract text available
    Text: APT5017BVFR 30A 0.170Ω 500V POWER MOS V FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5017BVFR O-247 O-247 APT5017BVFR

    APT5017BVFR

    Abstract: APT5017SVFR
    Text: APT5017BVFR APT5017SVFR 500V 30A 0.170Ω POWER MOS V FREDFET TO-247 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5017BVFR APT5017SVFR O-247 O-247 APT5017BVFR APT5017SVFR

    APT5017BVR

    Abstract: No abstract text available
    Text: APT5017BVR 500V 30A 0.170Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5017BVR O-247 O-247 APT5017BVR

    Untitled

    Abstract: No abstract text available
    Text: APT5017BFLC 500V POWER MOS VITM 30A 0.170W FREDFET Power MOS VITM is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss.


    Original     		PDF APT5017BFLC O-247 O-247 APT5017BFLC

    Untitled

    Abstract: No abstract text available
    Text: APT5017SVR 500V 30A 0.170Ω POWER MOS V Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.


    Original     		PDF APT5017SVR

    Untitled

    Abstract: No abstract text available
    Text: APT5017BVFR APT5017SVFR 500V 30A 0.170Ω POWER MOS V FREDFET TO-247 D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    Original     		PDF APT5017BVFR APT5017SVFR O-247 O-247 APT5017BVFR

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT10026JN

    Abstract: apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR
    Text: 1999 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 APT10026JN apt1004rbn APT10050JN FREDFETs APT8030jn APT4020BN APT5010LVFR APT5014LVR arf444 APT10M09LVR

    IRF1830G

    Abstract: IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696
    Text: Power MOSFETs Cross-reference guide May 2005 www.st.com/pmos Contents 2 Alpha and Omega Semiconductor 3 AnalogicTech 3 Anpec 3 APEC 3 APT 4 AUK 4 Fairchild 4 Fuji 12 Hi-Sincerity 14 Hitachi 14 Infineon 14 IR 18 IXYS 22 Matsushita 23 Reneas 23 Motorola 23


    Original     		PDF AO4405 AO4407 AO4408 AO4409 AO4410 AO4411 AO4413 AO4415 AO4422 AO4700 IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP85L02h AP70N03S 2SK3683 ap70l02h 2SK2696

    5017BVR

    Abstract: 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60
    Text: 2000 SHORT FORM CATALOG ADVANCED POWER TECHNOLOGY MIL-PRF-19500 ISO9001 Certified POWER DISCRETE SEMICONDUCTORS TECHNOLOGY TO THE NEXT POWER. 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on


    Original     		PDF MIL-PRF-19500 ISO9001 5017BVR 40814 5020BN 1431 T APT5010LVR APT1001RBLC apt10050 APT30M85BVR APT5020BLC apt2x101D60

    sot-227 footprint

    Abstract: VRF2933 SP6-P ARF1511 DRF1200 APT35GP120JDQ2 ARF521 TO-247 smps welder inverter APTGT25DA120D1G
    Text: Power Semiconductors Power Modules & RF Power MOSFETs 2006 Power Products Group 1 About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.


    Original     		PDF

    mj 1504 transistor equivalent

    Abstract: ARF450 FREDFETs transistors mj 1504 APT1201R2BLL APT60GF120JRD APT60M75JVR APT100S20B APT4014BVR APT1208
    Text: 1 Advanced Power Technology Technology . Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance this position as


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: APT5017BVFR A dvanced P o w er Te c h n o lo g y 500V POWER MOS V 30A 0.170Q FREDFET Power MOS V is a new generation of high voltage N-Channei enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5017BVFR O-24T APT5017BVFR O-247AD

    apt5017bvr

    Abstract: No abstract text available
    Text: A dvanced P o w er Te c h n o lo g y APT5017BVR 500V 30A 0.170n POWER MOS V Power MOS Visa new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5017BVR O-247 APT5017BVR Dra10 MIL-STD-750 O-247AD

    apt5017bvr

    Abstract: No abstract text available
    Text: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT5017B VR 500v 30a 0.170q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5017B O-247 APT5017BVR apt5017bvr

    APT5017BVFR

    Abstract: No abstract text available
    Text: • R A dvanced W .\A p o w e r Te c h n o lo g y " APT5017BVFR 500v 30a 0.170q POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5017BVFR O-247 APT5017BVFR

    Untitled

    Abstract: No abstract text available
    Text: APT5017SVR A dvanced W /Æ P o w e r Te c h n o lo g y • K soov 3oa 0.170Q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5017SVR DD022n

    Untitled

    Abstract: No abstract text available
    Text: ADVANCED P o w er Te c h n o l o g y APT5017SVR 500V 30A 0.1700 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancem ent mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF APT5017SVR APT5017SVR i-150)

    Untitled

    Abstract: No abstract text available
    Text: • R ADVANCED W .\A p o w e r Te c h n o lo g y " APT5017SVR 500v 30a 0.170q POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF APT5017SVR

    nt 6600 G

    Abstract: APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr
    Text: MOSFET Selector Guide ADVANCED POW ER Te c h n o l o g y APT » V,>ss ^DS ON ID(cont) C JP F ) Part Number Volts Ohms Amps Watts Typ APT1201R6BVR 1200 1.600 8 280 3050 APT1201R5BVR 1.500 10 370 3700 APT1001RBVR 11 280 3050 1000 1.000 APT10086BVR 0.860 13 370 3700


    OCR Scan     		PDF APT1201R6BVR APT1201R5BVR APT1001RBVR APT10086BVR APT8075BVR APT8065BVR APT8056BVR APT6040BVR APT6035BVR APT6030BVR nt 6600 G APT60M75JVR APT30M40JVR APT20M45B APT50M50JVR apt12080jvr 130-131 apt5014lvr APT5020BVFR apt40m70jvr

    Untitled

    Abstract: No abstract text available
    Text: A P T 5017B V F R A dvanced W 7Æ P o w e r Te c h n o l o g y 500v 30a POWER MOS V i 0.1700 FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V


    OCR Scan     		PDF 5017B O-247 APT5017BVFR MIL-STD-750 O-247AD

    5017B

    Abstract: DIODE TH 5 N
    Text: A P T 5017B V F R A dvanced PO W ER Te c h n o lo g y 500v POWER MOS V 30a 0.170s 2 FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®


    OCR Scan     		PDF 5017B O-247 APT5017BVFR APT5017BVFR O-247AD DIODE TH 5 N