BUZ54
Abstract: No abstract text available
Text: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a
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BUZ54
bhS3T31
D014717
JBUZ54
T-39-13
BUZ54
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D1407
Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance
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BUZ54_
bfa53131
BUZ54
T-39-13
D1407
BUZ54
t03 package transistor pin dimensions
MC 140 transistor
2sc406
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D01471
Abstract: No abstract text available
Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam ic RAM high d e n sity m em ory m odule. The Sam sung
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M536256W/WG
256Kx36
KMM536256W
M536256W
40-pin
72-pin
22fiF
KMM536256W-7
130ns
KMM536256W-8
D01471
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