Untitled
Abstract: No abstract text available
Text: • BCW31 BCW32 BCW33 bhS3T31 0Q245b7 114 « A P X N AUER PHILIPS/DISCRETE b?E D SILICON PLANAR EPITAXIAL TRANSISTORS N-P-N transistors in a microminiature plastic envelope. They are intended for low level general purpose applications in thick and thin-film circuits.
|
OCR Scan
|
PDF
|
BCW31
BCW32
BCW33
bhS3T31
0Q245b7
|
Untitled
Abstract: No abstract text available
Text: Philips S em iconductors bhS3T31 0031b53 437 M l APX Product specification NPN 4 GHz wideband transistor BFQ68 N AMER PHILIPS/DISCRETE bTE » PINNING DESCRIPTION NPN transistor mounted in a four-lead dual-emitter SOT122A envelope with a ceramic cap. All leads are isolated from the stud.
|
OCR Scan
|
PDF
|
bhS3T31
0031b53
BFQ68
OT122A
|
Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D • bhS3T31 QD2fllDfl 311 P h ilip s S e m ic o n d u c to rs 2N2894A D a ta sheet statu s Preliminary specification d a te o f issue December 1990 Silicon switching transistor QUICK REFERENCE DATA PARAMETER SYMBOL MIN. CONDITIONS
|
OCR Scan
|
PDF
|
bhS3T31
2N2894A
bb53131
7Z26553
bbS3T31
|
M2808
Abstract: BYV32F BYV32F-50 diodes b
Text: SSE D N AHER PHI LIPS/DISCRETE • bhS3T31 QDS5Sb3 □ ■ BYV32F SERIES jr ; 0 3 -/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficien cy e p itax ial do ub le rec tifie r diodes in S O T -1 8 6 fu ll-p a c k plastic
|
OCR Scan
|
PDF
|
BYV32F
OT-186
0D55S71
T-03-17
m2489
m2350
M2808
BYV32F-50
diodes b
|
Untitled
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 55E D • bhS3T31 QQlbaQ? 3 ■ Power Devices BREAKOVER DIODES TYPE NO. PACKAGE OUTLINE BREAKOVER VOLTAGE ±12% . TRANSIENT ' PEAK CURRENT HOLDING CURRENT It r m 8/20/rS | 10/700/rS itt 25°C SWITCHING CURRENT la 25°C dv/dt i ON-STATE
|
OCR Scan
|
PDF
|
bhS3T31
8/20/rS
10/700/rS
BR210-120
O-220AC
200mA
000V//US
000V/jus
000V//IS
|
BST124
Abstract: depletion mode
Text: bhS3T31 Philips Semiconductors 0023=103 I APX 6T3 Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E ]> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs
|
OCR Scan
|
PDF
|
bhS3T31
023liÃ
BST124
O-126
PINNING-TO-126
MRC19S
BST124
depletion mode
|
Untitled
Abstract: No abstract text available
Text: Philips Semiconductors bhS3T31 D D 32 34 S flTb H A P X Pf0ductspecification BGX881 C A T V am plifier m odule N AMER PHILIPS/DISCRETE PIN CONFIGURATION PINNING-SOT115D FEATURES PIN • Excellent linearity DESCRIPTION • Extremely low noise 1 input note 1
|
OCR Scan
|
PDF
|
bhS3T31
BGX881
PINNING-SOT115D
bbS3T31
|
M2344
Abstract: BYV32F BYV32F-50 m2809
Text: SSE D N AUER PHILIPS/DISCRETE • bhS3T31 QGE5Sb3 Q ■ BYV32F SERIES T-03-/7 ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring low forward voltage drop, very fast reverse recovery times and soft-recovery
|
OCR Scan
|
PDF
|
bbS3T31
GD55Sb3
BYV32F
T-03-J7
OT-186
0D55S71
T-03-17
M2489
M2344
BYV32F-50
m2809
|
Untitled
Abstract: No abstract text available
Text: 1-1 N AMER PHILIPS/DISCRETE DhE D • bhS3T31 DQ1S247 T ■ RZ2833B30W MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C broadband pulse power amplifier, operating in the 2.8 to 3.3 GHz frequency range.
|
OCR Scan
|
PDF
|
bhS3T31
DQ1S247
RZ2833B30W
|
TRANSISTOR D196
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bTE D • bhS3T31 0026744 flMfl M A P X . ' k j > jciiin;uiiuu cio specm cauon UHF power transistor FEATURES • Emitter-ballasting resistors for an optimum temperature profile
|
OCR Scan
|
PDF
|
bhS3T31
BLT53
002A751
MCD200
MCD201
TRANSISTOR D196
|
Untitled
Abstract: No abstract text available
Text: J amer philips /discrete ObE D • 001S1DS 1 bhS3T31 y PTB32001X PTB32003X PTB32005X v i T T - 3 3 - o '? MICROWAVE POWER TRANSISTORS N-P-N silicon transistors fo r use in common-base class-B power amplifiers up to 4,2 GHz. Diffused emitter ballasting resistors, interdigitated structure, multicell geometry, localized thick oxide
|
OCR Scan
|
PDF
|
001S1DS
bhS3T31
PTB32001X
PTB32003X
PTB32005X
PTB32001X.
r-33-07
|
Untitled
Abstract: No abstract text available
Text: bhS3T31 0023=163 6T3 W A P X Philips Semiconductors Product specification N-channel depletion mode vertical D-MOS transistors BST124 N AMER PHILIPS/DISCRETE b?E J> QUICK REFERENCE DATA FEATURES • High-speed switching SYMBOL • No secondary breakdown. VDs
|
OCR Scan
|
PDF
|
bhS3T31
BST124
O-126
bbS3R31
DD23TAA
|
Untitled
Abstract: No abstract text available
Text: bhS3T31 0033755 077 APX Philips Semiconductors Product specification N AUER PHILIPS/DISCRETE b7E D N-channel silicon field-effect BSJ108; BSJ109; BSJ110 transistors FEATURES QUICK REFERENCE DATA • High-speed switching SYMBOL • Interchangeability of drain and
|
OCR Scan
|
PDF
|
bhS3T31
BSJ108;
BSJ109;
BSJ110
BSJ108
BSJ109
BSJ108)
BSJ109)
BSJ110)
|
BLX79
Abstract: BZ 6V2 BZX79 bzx79 2v7 A4v34 C3V0
Text: N AflER P H I L I P S / D I S C R E T E kiTE D • bhS3T31 GGEbfiDb 0 3 0 H A P X B Z X 7 9 SERIES VOLTAGE REGULATOR DIODES Silicon planar diodes in DO-35 envelopes intended for use as low voltage stabilizers or voltage references. They are available in four series; each series having a different tolerance rating, one series
|
OCR Scan
|
PDF
|
BZX79
DO-35
BLX79
BZ 6V2
bzx79 2v7
A4v34
C3V0
|
|
|
MRB12350YR
Abstract: IEC134 MRB11350Y 67A MARKING
Text: A N AMER PHILIPS/DISCRETE m bhS3T31 00150bl 7 • OLE D MRB12350YR MAINTENANCE TYPE for new design use MRB11350Y X ' 33 - I S' PULSED MICROWAVE POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates only in
|
OCR Scan
|
PDF
|
MRB11350Y)
bh53T31
00150bl
MRB12350YR
IEC134)
IEC134
MRB11350Y
67A MARKING
|
RTC146
Abstract: IEC134 LKE21004R LTE21009R
Text: N AMER GbE P H ILIP S /D IS C R E TE D • I bhS3T31 D014141 MAINTENANCE TYPE for new design use LTE21009R T ■ LKE21004R T - iz - o ± r MICROWAVE LINEAR POWER TRANSISTOR N-P-N transistor for use in a common-emitter class-A linear power amplifier up to 2,1 GHz.
|
OCR Scan
|
PDF
|
LTE21009R)
D014141
LKE21004R
FO-53,
IEC134)
RTC146
IEC134
LKE21004R
LTE21009R
|
Untitled
Abstract: No abstract text available
Text: JLL bbS3T31 D0114D7 fl OLE D N AUER PH ILI PS/ DIS CRET E BYV43F SERIES T—03—19 SCHOTTKY-BARRIER, ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES High-efficiency schottky-barrier double rectifier diodes in SOT-186 full-pack plastic envelopes, featuring very low forward voltage drop, low capacitance and absence of stored charge. Their electrical
|
OCR Scan
|
PDF
|
bbS3T31
D0114D7
BYV43F
OT-186
bhS3T31
M1246
tbS3T31
|
RX1214B150W
Abstract: No abstract text available
Text: J J _ L_ _ N AMER PHILIPS/DISCRETE OLE D • I J1 J ^ O5O3J 1 3 00151Û3 T ■ RX1214B150W X T - 33^ ¡^r MICROWAVE POWER TRANSISTOR NPN silicon planar epitaxial microwave power transistor, intended for use in a common-base class-C
|
OCR Scan
|
PDF
|
bb53131
RX1214B150W
RX1214B150W
|
Untitled
Abstract: No abstract text available
Text: ii N AMER PHILIPS/DISCRETE 5SE D • bbS3T3i Qaaasa? i ■ I BYV29F SERIES _ J V 7 ^ 0 2 -1 7 ULTRA FAST-RECOVERY ELECTRICALLY ISOLATED RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial rectifier diodes in full-pack envelopes, featuring low forward
|
OCR Scan
|
PDF
|
BYV29F
REFERE0032534
T-03-17
00ES535
M1244
|
Untitled
Abstract: No abstract text available
Text: 35E D I I bb53T31 ODaEabT □ • BR216 N AMER PHILIPS/DISCRETE tte - o s r DUAL ASYMMETRICAL BREAKOVER DIODE The BR216 is a monolithic dual asymmetrical 65 V breakover diode in the TO-220AB outline. Each half of the device conducts normally in one direction, but in the other direction it acts as a
|
OCR Scan
|
PDF
|
bb53T31
BR216
BR216
O-220AB
bh5BT31
T-25-05
|
BUZ10
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE OLE D • PowerMOS transistor bb53T31 0014331 1 ■ BUZ10 r~ 1 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
|
OCR Scan
|
PDF
|
bb53T31
BUZ10
D0143flb
T-39-11
7Z21184
BUZ10_
BUZ10
|
BYP22
Abstract: BYP22-50 M2448
Text: N AMER PHILIPS/DISCRETE 25E D • 1^53=131 0Q2E375 T ■ BYP22 SERIES 7 ^ 0 3 - /9 ULTRA FAST-RECOVERY DOUBLE RECTIFIER DIODES FEATURING LOW REVERSE LEAKAGE Glass-passivated, high-efficiency epitaxial rectifier diodes in plastic envelopes, featuring lo w reverse
|
OCR Scan
|
PDF
|
0QSE37S
BYP22
M1257
BYP22-50
M2448
|
transistor fp 1016
Abstract: Lc 0427 17-25 sot89 BFQ18A Philips FA 291
Text: bbS3'i31 0025050 STM P h ilip s S e m ic o n d u c to rs IAPX P ro d u c t s p e c ific a tio n NPN 4 GHz wideband transistor BFQ18A N AMER PHI LIP S/DISCRETE DESCRIPTION b?E D PINNING NPN transistor in a plastic SOT89 envelope intended for application in
|
OCR Scan
|
PDF
|
BFQ18A
C1000
transistor fp 1016
Lc 0427
17-25 sot89
BFQ18A
Philips FA 291
|
TCA 321
Abstract: BGV584A BGY584A BGY585A DIN45004B philips hybrid amplifier modules
Text: b b S 3 *1 3 1 Philips Semiconductors 321 CATV amplifier modules U APX Product specification BGY584A; BGY585A N AMER PHILIPS/DISCRETE P IN N IN G -S O T 1 1 5 C FEATURES PIN • Excellent linearity PIN CONFIGURATION DESCRIPTION • Extremely low noise 1 input
|
OCR Scan
|
PDF
|
BGY584A;
BGY585A
PINNING-SOT115C
BGY584A
BGY585A
BGY584A
DIN45004B;
TCA 321
BGV584A
DIN45004B
philips hybrid amplifier modules
|