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    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 10yees, MRF7P20040HR3

    J365

    Abstract: TLC 3391 ATC100B150JT500X
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 1, 2/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 J365 TLC 3391 ATC100B150JT500X

    Untitled

    Abstract: No abstract text available
    Text: Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 LIFETIME BUY Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1

    C5750X5R1H106MT

    Abstract: MRF7S21210HS S2116
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 2, 3/2011 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 C5750X5R1H106MT MRF7S21210HS S2116

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 2, 6/2009 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1 arco 466

    AN1955

    Abstract: j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 0, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 j1303 C3225X7R1H225KT RO4350B Rogers RO4350B CRCW12061000FKEA atc600f1r1at250xt tdk 2025 A114 A115

    IRL 1530

    Abstract: 1606-TLC AN1955 MRF7S15100HR3 MRF7S15100HSR3 J4-81 TLC 3391
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3 IRL 1530 1606-TLC AN1955 MRF7S15100HSR3 J4-81 TLC 3391

    A113

    Abstract: A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 0, 12/2007 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 A113 A114 A115 AN1955 C101 JESD22 MRFG35002N6AT1

    AN1955

    Abstract: MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 1, 8/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 2010 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 AN1955 MRF7P20040H J1311 A114 A115 JESD22 ATC600F2R4AT250XT j182 semiconductor J1240 CRCW12061000FKEA

    TLC 3391

    Abstract: j4 81 A114 A115 AN1955 JESD22 MRF7S15100HR3 MRF7S15100HSR3 C4532JB1H685MT j449
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 0, 7/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3 TLC 3391 j4 81 A114 A115 AN1955 JESD22 MRF7S15100HSR3 C4532JB1H685MT j449

    IRL 1530

    Abstract: C4532JB1H685M 2222153 A114 A115 AN1955 JESD22 MRF7S15100HR3 MRF7S15100HSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S15100H Rev. 2, 6/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S15100HR3 MRF7S15100HSR3 Designed for CDMA base station applications with frequencies from 1470 to


    Original     		PDF MRF7S15100H MRF7S15100HR3 MRF7S15100HSR3 MRF7S15100HR3 IRL 1530 C4532JB1H685M 2222153 A114 A115 AN1955 JESD22 MRF7S15100HSR3

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3

    ATC100A101

    Abstract: murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35002N6A Rev. 1, 12/2008 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35002N6AT1 Designed for WLL/MMDS/BWA or UMTS driver applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35002N6A MRFG35002N6AT1 ATC100A101 murata gaas field effect transistor atc100a ATC100A1 N 341 AB A113 A114 A115 AN1955 C101

    232272461009

    Abstract: PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF7S21210HR3 MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to


    Original     		PDF MRF7S21210H MRF7S21210HR3 MRF7S21210HSR3 MRF7S21210HR3 232272461009 PHYCOMP 2222 Phycomp chip capacitor datasheet A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35

    12065C104KAT

    Abstract: A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35
    Text: Freescale Semiconductor Technical Data Document Number: MRF7S21210H Rev. 0, 7/2008 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF7S21210HSR3 Designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for CDMA and multicarrier amplifier applications. To be


    Original     		PDF MRF7S21210H MRF7S21210HSR3 12065C104KAT A114 A115 AN1955 C101 JESD22 MRF7S21210HSR3 RF35

    MRF7P20040H

    Abstract: AN1955 MRF7P20040HSR3 J1311
    Text: Freescale Semiconductor Technical Data Document Number: MRF7P20040H Rev. 2, 12/2010 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MRF7P20040HR3 MRF7P20040HSR3 Designed for CDMA base station applications with frequencies from 1800 to


    Original     		PDF MRF7P20040H MRF7P20040HR3 MRF7P20040HSR3 MRF7P20040HR3 MRF7P20040H AN1955 MRF7P20040HSR3 J1311