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    BY133G Price and Stock

    Micro Commercial Components BY133GP-TP

    DIODE GEN PURP 1.3KV 1A DO41
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    DigiKey BY133GP-TP Reel 5,000
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    Mouser Electronics BY133GP-TP 2,986
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    Micro Commercial Components BY133GP-AP

    DIODE GEN PURP 1.3KV 1A DO41
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    DigiKey BY133GP-AP Ammo Pack 50,000
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    Mouser Electronics BY133GP-AP
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    Vishay Semiconductors BY133GP-E3-54

    DIODE GEN PURP 1.3KV 1A DO204AC
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    DigiKey BY133GP-E3-54 Reel
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    Vishay Semiconductors BY133GP-E3-73

    DIODE GEN PURP 1.3KV 1A DO204AC
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    DigiKey BY133GP-E3-73 Ammo Pack
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    PanJit Semiconductor BY133G

    Diode Rectifier 1300V 1A 2-Pin DO-41 (Alt: BY133G)
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    Avnet Silica BY133G 6 Weeks 5,000
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    BY133G Datasheets (11)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BY133G EIC Semiconductor GLASS PASSIVATED JUNCTION SILICON RECTIFIER Original PDF
    BY133G EIC Semiconductor GLASS PASSIVATED JUNCTION SILICON RECTIFIERS Original PDF
    BY133G Good-Ark GLASS PASSIVATED JUNCTION RECTIFIER Original PDF
    BY133-G Sensitron Semiconductor DIODE STANDARD RECOVERY RECTIFIER 1300V 1A 2 pin DO-41 Original PDF
    BY133GP General Instrument 1.0A Iout, 1.6kV Vrrm General Purpose Silicon Rectifier Scan PDF
    BY133GP Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BY133GP Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BY133GP Unknown Cross Reference Datasheet Scan PDF
    BY133GP Unknown Diode, Transistor, Thyristor Datasheets and more Scan PDF
    BY133GP-AP Micro Commercial Components DIODE GPP 1A DO-41 Original PDF
    BY133GP-TP Micro Commercial Components DIODE GPP 1A DO-41 Original PDF

    BY133G Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N4001G

    Abstract: 1N4007G 4002G 4005G BY133G
    Text: 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Glass passivated chip High current capability High reliability Low reverse current


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    PDF 1N4001G 1N4007G BY133G DO-41 UL94V-O MIL-STD-202, 1N4007G 4002G 4005G BY133G

    1N4001G

    Abstract: 1N4007G 4002G BY133G
    Text: 1N4001G THRU 1N4007G, BY133G GLASS PASSIVATED JUNCTION RECTIFIERS Reverse Voltage – 50 to 1300 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • High temperature metallurgically bonded construction.


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    PDF 1N4001G 1N4007G, BY133G MIL-S-19500. DO-41 MIL-STD750, 50mVP-P 1N4007G 4002G BY133G

    4002G

    Abstract: BY133G 1N4001G 1N4007G
    Text: 1N4001G THRU 1N4007G, BY133G GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 50 to 1300 Volts Forward Current - 1.0 Ampere Features Plastic package has Underwriters Laboratory Flammability Classification 94V-0 High temperature metallurgically bonded construction


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    PDF 1N4001G 1N4007G, BY133G MIL-S-19500 DO-41 MIL-STD-750, 4002G BY133G 1N4007G

    4002G

    Abstract: 4005G BY133G 1N4001G 1N4007G
    Text: 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Glass passivated chip High current capability High reliability Low reverse current


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    PDF 1N4001G 1N4007G BY133G DO-41 UL94V-O MIL-STD-202, 4002G 4005G BY133G 1N4007G

    BY133G

    Abstract: IN 4007g 1N4001G 1N4007G 4002G 4005G 4006G
    Text: 1N4001G THRU 1N4007G, BY133G GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage – 50 to 1300 Volts Forward Current – 1.0 Ampere DO-41 0.7-0.9 Features • Low forward voltage drop Min 25.4 • High Surge current capability 2-2.7 4.2-5.2 Min 25.4 Mechanical Data


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    PDF 1N4001G 1N4007G, BY133G DO-41 MIL-STD-202, BY133G IN 4007g 1N4007G 4002G 4005G 4006G

    BY127G

    Abstract: BY133G BY127
    Text: BY127G THRU BY133G GLASS PASSIVATED SILICON RECTIFIER Reverse Voltage - 1250 to 1300 Volts Forward Current - 1.0 Ampere FEATURES DO-41 The plastic package carries Underwriters Laboratory Flammability Classification 94V-0 Construction utilizes void-free molded plastic technique


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    PDF BY127G BY133G DO-41 DO-41 MIL-STD-750, BY133G BY127

    GT60-04

    Abstract: GT64G GT60-005 T6A05L MPG06J MPG06M NS8KT equivalent 1N4006G 1N4007G BY133G
    Text: Glass Passivated Rectifiers Part No. 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G BY133G MPG06A MPG06B MPG06D MPG06G MPG06J MPG06K MPG06M 1N5391G 1N5392G 1N5393G 1N5395G 1N5397G 1N5398G 1N5399G J05G J1G J2G J4G J6G J8G J10G 1N5400G 1N5401G 1N5402G


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    PDF 1N4001G 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G BY133G MPG06A MPG06B GT60-04 GT64G GT60-005 T6A05L MPG06J MPG06M NS8KT equivalent 1N4006G 1N4007G BY133G

    1N4001G

    Abstract: 1N4007G 4002G BY133G
    Text: 1N4001G THRU 1N4007G, BY133G GLASS PASSIVATED JUNCTION RECTIFIERS Reverse Voltage – 50 to 1300 Volts Forward Current – 1.0 Ampere Features • Plastic package has Underwriters Laboratory Flammability Classification 94V-0. • High temperature metallurgically bonded construction.


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    PDF 1N4001G 1N4007G, BY133G MIL-S-19500. DO-41 MIL-STD750, 50mVP-P 1N4007G 4002G BY133G

    1N4001G

    Abstract: 1N4007G 4002G 4005G BY133G
    Text: 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Glass passivated chip High current capability High reliability Low reverse current


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    PDF 1N4001G 1N4007G BY133G DO-41 UL94V-O MIL-STD-202, 1N4007G 4002G 4005G BY133G

    1N4001G

    Abstract: 1N4007G 4002G 4005G BY133G
    Text: 1N4001G - 1N4007G BY133G GLASS PASSIVATED JUNCTION SILICON RECTIFIERS DO - 41 PRV : 50 - 1000 Volts Io : 1.0 Ampere FEATURES : * * * * * 1.00 25.4 MIN. 0.107 (2.7) 0.080 (2.0) Glass passivated chip High current capability High reliability Low reverse current


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    PDF 1N4001G 1N4007G BY133G DO-41 UL94V-O MIL-STD-202, 1N4007G 4002G 4005G BY133G

    Untitled

    Abstract: No abstract text available
    Text: ELECTRONICS INDUSTRY USA CO., LTD. 103 MOO 4, LATKRABANG EXPORT PROCESSING ZONE, LATKRABANG, BANGKOK 10520, THAILAND TEL. : (66 2) 326-0102, 739-4580 FAX. : (66 2) 326-0933 E-mail : eicfirst @ iname.com http. : // www.eicsemi.com 1N4001G - 1N4007G BY133G


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    PDF 1N4001G 1N4007G BY133G DO-41 UL94V-O

    Untitled

    Abstract: No abstract text available
    Text:      3-G      4002,  -   !" !" !" !" !"  Green Products                                                                         


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    PDF DO-41

    BA159 equivalent

    Abstract: B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358
    Text: Typen - Vergleichsliste Typ Diotec 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5059 1N5059 1N5060 1N5061 1N5062 6A05/G 6A10/G 6A20/G 6A40/G 6A60/G 6A80/G 6A100/G Fam. R R R R R R P600A P600B P600D P600G P600J P600K P600M R R R R R R R 1B005 1B01 1B02


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    PDF 1A01/G 1A02/G 1A03/G 1A04/G 1A05/G 1A06/G 1N5059 1N5060 BA159 equivalent B80C1500-1000 BYS26-45 equivalent sb5100 B380C2000/1500 1N5048 BYX55-350 BYS21-45 BYX55-600 SMB358

    BYS26-45

    Abstract: KYZ72/35 tra0103 FBU4K SMB358 BYS21-45 FBU4G B40C1500-1000 BYS21-90 HD84K
    Text: Diotec - Cross Reference Diotec Part 1.5KE100A 1.5KE100A 1.5KE100A 1.5KE10A 1.5KE10A 1.5KE10A 1.5KE110A 1.5KE110A 1.5KE110A 1.5KE11A 1.5KE11A 1.5KE11A 1.5KE120A 1.5KE120A 1.5KE120A 1.5KE12A 1.5KE12A 1.5KE12A 1.5KE130A 1.5KE130A 1.5KE130A 1.5KE13A 1.5KE13A


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    PDF 5KE100A 5KE10A 5KE110A 5KE11A BYS26-45 KYZ72/35 tra0103 FBU4K SMB358 BYS21-45 FBU4G B40C1500-1000 BYS21-90 HD84K

    BY133GP

    Abstract: BY134GP BY135GP
    Text: GENL INSTR/ POWER 2SE D • 30^0137 0 0 0 3 ^ 5 1 ■ T -0 1 - BY133GP THRU BY135GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 1300 Volts Current - 1.0 Ampere FEATURES Dimensions in Inches a n d millimeters ‘ Glass-plastic encapsulation technique is covered by Patent No. 3,996,602


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    PDF BY133GP BY135GP DO-15 DO-15 UL94VO) BY134GP BY135GP

    Untitled

    Abstract: No abstract text available
    Text: GENL INSTR/ POWER 2SE D • 30^0137 0 0 0 3 ^ 5 1 ■ T - 0 1 - BY133GP THRU BY135GP MINIATURE GLASS PASSIVATED JUNCTION PLASTIC RECTIFIER Voltage - 200 to 1300 Volts Current - 1.0 Ampere FEATURES Dimensions in Inches a n d millimeters ‘ Glass-plastic encapsulation technique is covered by Patent No. 3,996,602


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    PDF BY133GP BY135GP DO-15 IL-S-19500

    Untitled

    Abstract: No abstract text available
    Text: Glass passivated rectifier diodes. 1 Amp. to 3 Amps. The plastic material carries U/L recognition 94V-0. Maximum Average Max.Recurrent Repetitive Peak Forward Forward Rectified Reverse T Y PE Current Current Voltage If av Ta V rrm I fr m (A) Axial Lead | S.M.D.


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    PDF 4007G BY133G 1N5391G/GNOA DO-41/SMA 1N5391G 1NS392G 1NS393G 1NS394G 1NS39SG 1N5396G

    ru 94v-0

    Abstract: ru 94v0 GP25M BY127GP BY127 RGP02-12 BY206GP BY126 BY133GP BYX10GP
    Text: SUPERECTIFIER .25 to 3.0 Amperes 50 Volts to 4000 Volts Introduction No other .25 to 3.0 Ampere rectifiers of any kin d — plastic, glass, o r metal— can match or even approach SUPERECTIFIER's com bination of fe a tu re s . .the result of General Instrum e nt’s unique


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    PDF 1N4942GP RGP02-12 RGP10A RGP15A RGP20A RGP25A 1N4948GP RGP02-20 RGP10M RGP15M ru 94v-0 ru 94v0 GP25M BY127GP BY127 BY206GP BY126 BY133GP BYX10GP

    diode BY127 specifications

    Abstract: GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W -& Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO 11 PKG TYPE D041/D015 D015 II I D0204/VP D041 Sr I Il li VRRM (volts) - 50 GP10A BYW27-50 G 1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


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    PDF 00G3315 D041/D015 D0204/VP GP10A GP10B GP10D BYW27-50 BYW27-100 BYW27-200 BY135GP diode BY127 specifications GE diode 1N5061 diode by127 GP 524 DIODE diode cross reference 1N4245 diode 1n5392 GP+524+DIODE BYW27-40Q D0201AD 1N4245

    Untitled

    Abstract: No abstract text available
    Text: 16011 Footh ill Boulevard lrw indale. C A 9 1 7 0 6 EIC Semiconductor, Inc. Tel: 8 1 8 9 6 9 -1 3 1 ? F A X : (8 1 8 )9 6 9 -0 9 6 5 The plattic material cam e» U /L recognition 94V -0. TY PE A venge Rectified Current IFiAV) T i (A) | ( -C) Peak Invent


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    PDF 1N4001C 1N4002G 1N4003G 1N4004G 1N4005G 1N4006G 1N4007G BY133G 1N5400G 1N5401G

    BY27-150

    Abstract: GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700
    Text: INTRODUCTION General Instrument Corporation Is a major multinational company manufacturing a wide range of products from data systems, broadband communications, and components to semiconductor products. The cor­ poration, which has been in existence over 50 years, has manufacturing


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    PDF sP10-1006 ZGPKM10 2GP1M10A ZGP10-110B ZGP10-12Û ZGP10-12QA ZGP10-1206 ZGP10-130 ZGP10-13QA ZGP10-130B BY27-150 GENERAL INSTRUMENT b80c5000 BY207 S8360 BYX55-600 B80C1500M b40c3700 BY500 general instrument JJTX1N5615 BRIDGE RECTIFIERS b80c3700

    diode BY127

    Abstract: BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE
    Text: 6ENL INSTR/ POWER 2SE D • 30=10137 00G3315 1 ■ 7^ W - & Ô STANDARD SILICON RECTIFIERS continued • 1.0 »(A) DO11 PKG TYPE D041/D015 D015 II I D0204/VP Il li D041 I Sr VRRM (volts) - 50 GP10A BYW27-50 G1A 1N4001*/ M100A 100 GP10B BYW27-100 G1B 1N4002*/


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    PDF 00D3315 D041/D015 D0204/ GP10A BYW27-50 1N4Q017 M100A GP10B 8YW27-1O0 1N4002 diode BY127 BY127 diode diode cross reference 1N4007 diode zener 1n4002 diode M100J zener diode cross reference P diode by127 g1g diode GP15M "cross reference" 1N4007 ZENER DIODE

    APY12

    Abstract: BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367
    Text: Semiconductors Semiconducteurs Halbleiter YEARLY EDITION - EDITION AN N UELLE - jX H R LIC H E AU SG A BE SIXTH EDITION SIXIEME EDITION SECHSTE AUSGABE 1978 Compiled by: Association Internationale PRO ELECTRON, Bd. de Waterloo, 103, B 1000 BRUSSELS Published by: JE. E KLUWER, B 2100 DEURNE-ANTWERP


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    PDF Edition-1978) Ausgabe-1978) BS3934 SO-26 OT-114 NS371 APY12 BYY32 ac176 AEY26 BAV77 bby20 BD545B BAV27 transistor KT 209 M AF367

    kpbc10

    Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
    Text: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A


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    PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041