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    1N483B Price and Stock

    Microchip Technology Inc 1N483B

    DIODE GEN PURP 70V 200MA DO35
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    onsemi 1N483B

    DIODE GEN PURP 80V 200MA DO35
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    Rochester Electronics LLC 1N483B

    DIODE GEN PURP 80V 200MA DO35
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    onsemi 1N483BTR

    DIODE GEN PURP 80V 200MA DO35
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    Microchip Technology Inc 1N483BUR

    DIODE GEN PURP 225V 50MA DO213AA
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    1N483B Datasheets (44)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N483B Compensated Devices GENERAL PURPOSE SILICON DIODES Original PDF
    1N483B Fairchild Semiconductor DIODE STANDARD RECOVERY RECTIFIER 80V 0.2A 2DO-35 BULK Original PDF
    1N483B Microsemi High Conductance DO-35 Diodes Original PDF
    1N483B Microsemi Signal or Computer Diode Original PDF
    1N483B Taitron Components Rectifier Diode, Single, 150V, SOD-27|SOD-68, 2-Pin Original PDF
    1N483B Crimson Semiconductor SILICON DIODES Scan PDF
    1N483B Crimson Semiconductor Silicon Diodes, DO-7 or DO-35 Scan PDF
    1N483B Fairchild Semiconductor General purpose low leakage diode. Working inverse voltage 70V. Scan PDF
    1N483B Fairchild Semiconductor Full Line Condensed Catalogue 1977 Scan PDF
    1N483B General Diode Silicon Diode Selection Guide Scan PDF
    1N483B General Semiconductor Low Power Miniature Glass Passivated Junction Rectifier Scan PDF
    1N483B Micronas Semiconductor General Purpose and Switching Diodes in a DO-35 Package Scan PDF
    1N483B Microsemi General Purpose Silicon Diodes Scan PDF
    1N483B Microsemi Data Book 1983 Scan PDF
    1N483B Motorola Motorola Semiconductor Datasheet Library Scan PDF
    1N483B Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N483B Unknown Basic Transistor and Cross Reference Specification Scan PDF
    1N483B Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N483B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N483B Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    1N483B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1N483BUR

    Abstract: CDLL483B LL483B
    Text: FEATURES 1N483BUR • • • • • • 1N483BUR SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS LL483B, CDLL483B MAXIMUM RATINGS AT 25 °C Operating Temperature: Storage Temperature: Surge Current, sine, 8.3mS:


    Original
    PDF 1N483BUR LL483B, CDLL483B 500mW 200mA 1N483BUR CDLL483B LL483B

    1N483A Diode

    Abstract: 1n483 diode 1N483 1N483A 1N483B
    Text: FEATURES 1N483B • • • • • • 1N483B AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 SWITCHING DIODE METALLURGICALLY BONDED HERMETICALLY SEALED DOUBLE PLUG CONSTRUCTION ALSO AVAILABLE AS 1N483 & 1N483A MAXIMUM RATINGS AT 25 °C Operating Temperature:


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    PDF 1N483B 1N483B MIL-PRF-19500/118 1N483 1N483A 500mW 200mA MILPRF-19500/118 1N483A Diode 1n483 diode 1N483 1N483A

    IN483

    Abstract: IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN483 IN485 IN483B 1N483B 1N485B 1N486B IN485B IN486B

    IN485B

    Abstract: IN486B IN485 IN483B 1N483B 1N485B 1N486B
    Text: 1N483B 1N485B 1N486B • AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-19500/118 • GENERAL PURPOSE SILICON DIODES • METALLURGICALLY BONDED MAXIMUM RATINGS 0.085/0.125 2.16/3.18 Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C


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    PDF 1N483B 1N485B 1N486B MIL-PRF-19500/118 100mA IN485B IN486B IN485 IN483B 1N483B 1N485B 1N486B

    Untitled

    Abstract: No abstract text available
    Text: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF AV Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current


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    PDF 1N483B DO-35 1N483B

    Untitled

    Abstract: No abstract text available
    Text: 1N483B Small Signal Diode DO-35 Color Band Denotes Cathode Absolute Maximum Ratings * Symbol Ta = 25°C unless otherwise noted Parameter Value Unit VRRM Maximum Repetitive Reverse Voltage 80 V IF AV Average Rectified Forward Current 200 mA IFSM Non-repetitive Peak Forward Surge Current


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    PDF 1N483B 1N483B DO-35 1N483BTR

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


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    PDF represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355

    Untitled

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N482B 1N486B LOW LEAKAGE RECTIFIER MAXIMUM RATINGS Symbol Value Unit Average forward rectified current @ TA = 25°C Rating IAV 0.65 A Maximum non-repetitive surge 8.3ms ½ sine IFSM 2.0 A Junction temperature range TJ -65 to +200


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    PDF 1N482B 1N486B 1N483B 1N484B 1N485B DO-35 MIL-PRF-19500,

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Text: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    PDF QML-9500-19 1N1124A 1N3768 1N3821A 1N4562B 1N4565A 1N5819-1 1N5822 1N6761 1N6761-1 cczl 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251

    1N483B

    Abstract: 1N486B JANTX 1N486B D0204MB
    Text: GENL IN S TR / 3ÖE POWER D • 3ÔT0137 QQOMMÔS ^ 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED JUNCTION RECTIFIER Voltage - 70 to 225 Volts Current - 200 Milliamperes FEATURES D 0-204M B .023 0.61. .018(9.» LO (25.4 KIR. C7.6) ITS) HO(25.4)


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    PDF 1N483B 1N486B DQ-204MB 50mVp-p 1N486B JANTX 1N486B D0204MB

    1n4948 Silicon Instrument

    Abstract: byw76 diodes RG3A General instrument 1n4948 byw76
    Text: FAMILIES OF GENERAL INSTRUMENT GLASS PASSIVATED RECTIFIERS Glass Passivated Silicon Diodes 0.2 to 0.4 AMPERES Types: Features: 1N483B thru 1N486B 1N645 thru 1N649 ♦ ♦ ♦ ♦ ♦ ♦ ♦ High Temperature Metallurgically Bonded High Efficiency and Rectification Radio


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    PDF 1N483B 1N486B 1N645 1N649 MII-STD-202/208 from-65 1N4245 1N4249 1N5059 1N5062 1n4948 Silicon Instrument byw76 diodes RG3A General instrument 1n4948 byw76

    1n485b

    Abstract: No abstract text available
    Text: DIODE 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B General Purpose Low Current FEATURES DESCRIPTION • • • • This Series is useful in low current rectify­ ing applications for military, industrial and commercial equipment. Metallurgical Bond


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    PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118 1N485B 200mA

    Untitled

    Abstract: No abstract text available
    Text: MICROSEMI CORP/ UATERTOIilN 5GE ]> ninnF • =1347^3 DD1S3S1 E lfl ■ UNIT 1N483B; JAN, JANTX 1N483B 1N485B; JAN, JANTX 1N485B l-r| v / L / t General Purpose Low Current FEATU RES • M e ta llu rg ica l Bond • Q u alified to MIL-S-19500/118 • P la n a r P assivated C h ip


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    PDF 1N483B; 1N483B 1N485B; 1N485B MIL-S-19500/118

    JAN1N486B

    Abstract: JANTX 1N483B JAN-TX1N483B
    Text: POWER SEMICONDUCTOR DIVISION iNstim JAN AND JANTX 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON DIODES VOLTAGE 70 to 225 Volts CURRENT 200 Milliamperes - - T FEATURES 1.50 38.1 1 .0 0(25.4) Î .300 (7.6) .125(3.18) DIft .085 (2.1G) 1.50


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    PDF 1N483B 1N486B MIL-S-19500/118C MI-STD-202, JAN1N486B JANTX 1N483B JAN-TX1N483B

    diode 483b

    Abstract: 483B BY100 JAN1N marking E 1n diode
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 Microsemi Corp. $ The diode e>perts SANTA ANA, CA j F o r m ore in fo rm a tio n call: / SCOTTSDALE, AZ 7I4 979-8220 GENERAL PURPOSE SILICON DIODES FEA TU R ES • • • • V o id le s s h e rm e tic a lly s e a le d g la s s p a c k a g e (DO-35).


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    PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5194, 1N5196. 1N486B, 1N5194- diode 483b 483B BY100 JAN1N marking E 1n diode

    n5195

    Abstract: JAN1N486B
    Text: 1N483B thru 1N486B and 1N5194 thru 1N5196 M ierosemi Corp. 1 The óiode experts , 71 SMISTA A N A CA F o r m o re in fo rm a tio n cali: 714 979-8220 GENERAL PURPOSE SILICON DIODES FEATURES • • • • • V oidless h e rm e tic a lly s ea led glass p a c k ag e (DO-35).


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    PDF 1N483B 1N486B 1N5194 1N5196 DO-35) 1N5196 1N5194, N5195, 1N5196. n5195 JAN1N486B

    Untitled

    Abstract: No abstract text available
    Text: 1N483B THRU 1N486B LOW POWER MINIATURE GLASS PASSIVATED SILICON RECTIFIER Voltage - 70 to 225 Volts Current 200 Milliamperes - FEATURES High temperature metallurgically bonded con­ structed rectifiers 0.2 Ampere oper^ ation at Ta = 25*C with no thermal runaway


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    PDF 1N483B 1N486B MIL-S-19500

    1N4868

    Abstract: lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N483B 1N485B 1N486B
    Text: 1N483B-1N486B 1N51I94-1N5196 «¡erosemi Corp. GENERAL PURPOSE SILICON DIODES FEATURES • • • • Voidless hermetically sealed glass package. Triple layer passivation. Metallurgically bonded. TX types available per MIL-S-19500/118C. ABSOLUTE M A XIM U M RATING S


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    PDF 1N483B-1N486B 1N51I94-1N5196 MIL-S-19500/118C. 1N483B 80ACKAGE: 1N483B, 1N5194, 1N5195, 1N5196. 1N483B- 1N4868 lt 8220 1N483B1 1N4858 1N5194 JAN1N486B N5194 1N485B 1N486B

    kpbc10

    Abstract: diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041
    Text: 6ENL INSTR/ POüJER 2SE D • 7^9/~éC> 30^0137 G G Q 3 3 m T ■ Standard Silicon Rectifiers t II A PKG TYPE 0.2 0.4 D0204MB D0204MB 0041 n Îl II 0.5 0.5 0.8 1.0 MINI M ELF GL-34 MINI M ELF GL-34 D041 MPG06 I I I VRRM (volts) 50 1N483B GL34A BYM05-50 GP08A


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    PDF GL-34 D0204MB MPG06 BYM05-50 MPG06A# 1N483B GL34A GP08A kpbc10 diode 1N645 EFR135 DIODE 1N649 gp20 diode JTX1N4942 SMD zener diode 203 rectifier diode GP20 RGP10E D041

    RG3G

    Abstract: D0204AP 1N647 RG3A D0-204AP 1N5559
    Text: QUICK GUIDE TO GLASS PASSIVATED RECTIFIERS TYPE 1N483B thru 1N486B 1N645 thru 1N649 1N4245 thru 1N4249 1N4942* thru 1N4948' 1N5059 thru 1N5062 1N5614 thru 1N5622 CASE D0204MB DO204MB D0204AP D0204AP D0204AP D0204AP le A 02 04 1.0 10 1.0 1.0 1.0 1.0 1.0 I» (A)


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    PDF 1N483B 1N486B D0204MB 1N485B 1N645 1N646 1N647 1N648 RG3G D0204AP RG3A D0-204AP 1N5559

    IC HXJ 2038

    Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
    Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY


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    PDF

    FDS01503

    Abstract: FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent
    Text: This Material National Semiconductor Surface Mount Diodes <S> m 2 t-i General Purpose & Specialty Diodes O Device Description Pkg. No. Pin Out Bv V Min •r (nA) @ Max Vr V Vf <V> Max If mA mA C PF Max to­ ns Max Test Cond. FDS01000 FAMILY Proc. Family


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    PDF D113D T-03-01 FDS01200 FDS01400 FDS01500 FDS01700 1N914 1N4149 FDH600 1N625 FDS01503 FDS01403 1n457a equivalent 1n625 equivalent FDS01502 1N457A J 1N3070 equivalent FDS01401 FDS01501 1N459 equivalent

    1n914 surface mount diode

    Abstract: equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23
    Text: This Surface Mount Diodes Material tr In a fc-J fc-> General Purpose & Specialty Surface Mount Diodes continued The National "MMBD" Series provides the SOT-23 electrical equivalent of the standard devices listed. Each family is available in 5 configurations.


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    PDF b501130 1n914 surface mount diode equivalent diode for 1n457 1N457 equivalent 1N459 equivalent 1N914 SOT-23 1N456A 1n4148 sot 1N4148 SOT-23 1n457a equivalent 1N914 diode SOT-23

    1N4868

    Abstract: 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A
    Text: Zener Volt age Zener Type No. 3t 1ZT @ mA Volts S u f f ix A 0 .2 0 MICROSEMI Zener Voltage Tolerance Max. Zener Impedance @ Ur Ohms Power Rating Device Package 150m w C a s e A 8 1 N 2 2 5 ÎD 1N 2 2 6 il ) 1 N 2 2 7 (1 ) 7 .5 • 1 0 .0 9 .0 • 1 2 .0


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    PDF 1N2250) 1N226I1) 1N227 150mw 1N228C) 1N229C) 1N2301D 1N231C) 1N2320 1N233 1N4868 1N233 zener diode 1N429 1N239 1N471 IN753 IN4858 IN4868 diode JAN1N486B 1N47A