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    l5 transistor PNP

    Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
    Text: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high


    OCR Scan     		PDF MPSA64 MMBTA64 OT-23 PZTA64 OT-223 004G77S l5 transistor PNP PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64

    2N4355

    Abstract: 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 50113g 2N4354 T-12
    Text: NATL S E M IC O N D { D I S C R E T E ! ifi DE | This Material Copyrighted By Its Respective Manufacturer b S 0 1 1 3 0 0 0 3 S M M 3 7 f ” NATL S E M IC O N D NATL SEMICOND, s Tut Conditions CO CD 8 o £ 2 Q. CM CO CO o o O O o o 2fl D F | t S D 1 1 3 D


    OCR Scan     		PDF 50113G 003SMM3 30fiA, 2N4355 2N5139 2N3644 2N4121 TN2904A NS4234 TIS91 2N3638A 2N4354 T-12

    MMBTH10

    Abstract: t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national
    Text: NATL SEMICOND HE DISCRETE D I bS01130 0Q37273 7 | National Semiconductor <n T -3 I-I7 £ IO < ro MPSA92 MPSW92 MMBTA92 I<o ro TO-236 SOT-23 TL/G/10100-5 PNP High Voltage Amplifier Electrical Characteristics Ta Symbol = 25°C unless otherwise noted Parameter


    OCR Scan     		PDF MPSW92 bS01130 0Q37273 r-31-n MMBTA92 TL/G/10100-1 O-226AE O-236 OT-23) TL/G/10100-5 MMBTH10 t-31-21 MMBTA92 MMBTH11 MPSH10 MPSH11 MPSW92 T3121 MPS-H10 national

    NDP505A

    Abstract: B23 j ZENER DIODE NDP506A zener Diode B23
    Text: rvtrih ^r 1QQ1 Semiconductor NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		PDF NDP505A/NDP505B, NDP506A/NDP506B B1-043-299-2408 hSG113D D3lifci33 NDP505A B23 j ZENER DIODE NDP506A zener Diode B23

    DG 402 rp

    Abstract: No abstract text available
    Text: NPDS402 I NPDS403 I NPDS4041 NPDS406 Discrete POWER & Signal Technologies National Semiconductor" t ß NPDS402 NPDS403 NPDS404 NPDS406 D2 s2 — NC ^ S O -8 % NC D1 S1 N-Channel General Purpose Dual Amplifier Sourced from Process 98. Absolute Maximum Ratings*


    OCR Scan     		PDF NPDS402 NPDS403 NPDS404 NPDS406 bS0113D Q040cJ5b DG 402 rp

    NDT014L

    Abstract: MOC3
    Text: & June 1996 N ational Semiconductor PRELIMINARY " NDT014L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDT014L L5D1130 NDT014L MOC3

    bu 517

    Abstract: NDS352P
    Text: March 1996 N ational Semiconductor" NDS352P P-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These P-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS352P b50113D 003T74G bSD113D bSD113D 317H2 bu 517 NDS352P

    TN3725A

    Abstract: LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35
    Text: D is c r e t e P O W E R & S i g n a l ^ . T e c h n o lo g ie s TN3725A MMPQ3725 TN3725AI MMPQ3725 & XT . , N a t i o n a l _ , S e m i c o n d u c t o r ,M S O IC -1 6 NPN Switching Transistor Th is d e v ic e is d e sig n e d fo r high sp eed co re d rive r a pp licatio n s


    OCR Scan     		PDF TN3725A MMPQ3725 O-226 SOIC-16 100KS1 b501130 TN3725A LB 122 NPN TRANSISTOR TN3725 MMPQ3725 SOIC-16 LB 122 transistor LB 122 NPN transistor A4t 35

    Untitled

    Abstract: No abstract text available
    Text: BAS16 Discrete POWER & Signal Technologies & National Semiconductor" BAS16 High Conductance Ultra Fast Diode Sourced from Process 1P. See BAV99 for characteristics. Absolute Maximum Ratings* Symbol t a =25 c um^s otherwise noted Parameter Value Units Wiv Working Inverse Voltage


    OCR Scan     		PDF BAS16 BAV99 bSD113G DD4DS41 100ii bSD113D

    transistor c 4137

    Abstract: NDS9925A
    Text: National Semiconductor~ June 1996 ADVANCE INFORMATION NDS9925A Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9925A 0-075O 125DC/W 300ps, bSD113D transistor c 4137 NDS9925A

    NDS9945

    Abstract: 2501lA
    Text: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9945 bSD113G b5G1130 004DGDÃ NDS9945 2501lA

    ze 003 ic

    Abstract: NDS9959 ze 003 4232 CM C135T
    Text: Nationa I Semiconductor M ay 1996 “ NDS9959 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.


    OCR Scan     		PDF NDS9959 bSD113G 00400b? ze 003 ic NDS9959 ze 003 4232 CM C135T

    dual P-CHANNEL 30V DS MOSFET

    Abstract: NDS8958 Dual N & P-Channel MOSFET
    Text: Na t t o n a l Semiconductor" July 1996 N D S8958 Dual N & P-Channel Enhancem ent M ode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS8958 035fi b5D113D dual P-CHANNEL 30V DS MOSFET NDS8958 Dual N & P-Channel MOSFET

    250M

    Abstract: NDB4050 NDP4050
    Text: 1 N ational Semiconductor- Jul y1996 NDP4050 / NDB4050 N-Channel Enhancement Mode Field Effect Transistor G eneral Description Features These N-Channel enhancem ent m ode pow er fie ld effect transistors are produced using N ational's proprietary, high cell density, DMOS technology. This


    OCR Scan     		PDF July1996 NDP4050/ NDB4050 bS0113D 004022b D040227 250M NDP4050

    B23 zener diode

    Abstract: zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B
    Text: National Semiconductor Ontnhfir 1QQ1 NDP505A/NDP505B, NDP506A/NDP506B N-Channel Enhancement Mode Power Field Effect Transistor General Description Features These n-channel enhancement mode power field effect transistors are produced using National’s proprietary, high


    OCR Scan     		PDF NDP505A/NDP505B, NDP506A/NDP506B hSG113D B23 zener diode zener Diode B23 NDP505A NDP506A transmitter and receiver MINI CAMERA HRD-B30M115 B23 j ZENER DIODE NDP505B NDP506B

    NDS9943

    Abstract: 56 pF CH N-8C
    Text: N a t ion a I Semiconductor" M ay 1996 NDS9943 Dual N & P-Channei Enhancement Mode Field Effect Transistor General Description Features These du a l N- and P-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using N a tio n a l's p ro p rie ta ry, high cell density, DMOS


    OCR Scan     		PDF NDS9943 bSD113G 0D400Q2 NDS9943 56 pF CH N-8C

    Untitled

    Abstract: No abstract text available
    Text: BSS64 Discrete POWER & Signal Technologies National m y y S e m i c o n d u c t o r “ BSS64 Mark: U3 NPN General Pupose Amplifier This device is designed far general purpose high voltage amplifiers and gas discharge display driving. Sourced from Process 16.


    OCR Scan     		PDF BSS64 bS01130 bSD113G G04Cm4 b5D113D 04CH15

    ndc7002n

    Abstract: No abstract text available
    Text: National March 1996 Semiconductor” & NDC7002N Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDC7002N ndc7002n

    BSS123

    Abstract: BSS100 85S100 TRANSISTOR BSS123 K5011
    Text: tu N ational Semiconductor" J u ly 1996 BSS100 / BSS123 N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS


    OCR Scan     		PDF BSS100 BSS123 BSS100: BSS123: k501130 BSS123 bS0113D 85S100 TRANSISTOR BSS123 K5011

    j107

    Abstract: Capacitance j107 J105 j106
    Text: Semiconductor“ J105 J106 J107 NDSJ105 SOT-23 s N-Channel Switch This device is designed for analog or digital switching applications where very low On Resistance is mandatory. Sourced from Process 59. Absolute Maximum Ratings* Symbol TA = 25CC unless otherwise noted


    OCR Scan     		PDF NDSJ105 OT-23 maximu0040 bSD113G j107 Capacitance j107 J105 j106

    Ultrasonic amplifier

    Abstract: No abstract text available
    Text: NATL SEniCOND {DISCRETE! 6 5 0 1 130 N A T L SEMICOND, ~ 2Û DE | b 5 Q 1 1 3 D DOaSSÙ1! DISCRETE 28C 35589 Q. ^ N a tio n a l r Æj Semiconductor - ' Z f ' Z . / CM o CO CM s ¡ u o n f i f m / D w o ! 3 0 m A low noise transistors N B 0 2 3 .0 2 4 (PNP)


    OCR Scan     		PDF NB013 N8013EV NB023EY NB011EY N8011EY NB011EY C309N Ultrasonic amplifier