MMBT3905
Abstract: MMBT2904 2N2906 to-92 2N1132A LM3661TL-1.40 2N2907 PNP Transistor to 92 2N3906 MPS3905 s2e transistor transistor 2N2905
Text: NATL SEMICOND DISCRETE SEE 3> • b501130 0037777 2 ■ T^27~0J PNP General Purpose Transistors by Ascending Vceo (continued) V Ceo(V) V cbo(V) Min Min BCF29 BCF30 BCW 61A 32 32 32 2N1132A 2N2904 2N2905 2N2906 2N2907 2N3905 2N3906 2N4037 2N4402 2N4403 2N5365
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S01130
BCF29
O-236
BCF30
BCW61A
2N1132A
2N2904
2N2905
MMBT3905
MMBT2904
2N2906 to-92
LM3661TL-1.40
2N2907 PNP Transistor to 92
2N3906
MPS3905
s2e transistor
transistor 2N2905
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1S44
Abstract: 1N661 1S920 1N461A 1N462A 1N463A 1N659 1N660 1S921
Text: Diode Data NATL SEMI CONO DISCRETE H E D | b501130 0037003 0 | General Purpose Diodes Glass Package Package No. V rrm V Min 1N461A DO-35 1N462A 1N463A Device No. vF c *rr ns Max •r nA @ Max Vr V 30 500 25 1.0 100 D2 DO-35 70 500 60 1.0 100 D2 DO-35 200
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b501130
T-01-01
1N461A
DO-35
1N462A
1N463A
1N659
1S44
1N661
1S920
1N660
1S921
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SOIC-16
Abstract: SOIC16 National Semiconductor Discrete catalog
Text: bûF. D m b501130 DGBSSMG 755 H N S C 5 Multiple Bipolar Transistors— Quad NATL SEMICON] DISCRETE) li r e l c Device Type VcEfSAT) v r.F !c *T C qb (V) Min (A) Max Min mA MHz Min PF M ax 30 0.5 100 150 200 8 0.4 10 150 CD7 SOIC-16 0.4 10 150 CD3 TO-116
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b501130
SOIC-16
O-116
SOIC-16
MMPQ6502
MPQ6502
MMPQ6700
MPQ6700
MMPQ2369
MPQ2369
SOIC16
National Semiconductor Discrete catalog
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NDT453N
Abstract: JJS-100 A14S
Text: June 1996 National Sem icon d uctor" NDT453N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e p o w e r field effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.
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NDT453N
OT-223
bSG113D
GO401lb
NDT453N
JJS-100
A14S
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J111 national
Abstract: J112 J113 25CC J111 MMBFJ111 MMBFJ112 MMBFJ113 MARK 6C SOT-23 k20a
Text: S e m i c o n d u c t o r " J111 J112 J113 G MMBFJ111 MMBFJ112 MMBFJ113 T O -9 2 D M ark: 6 P / 6 R / 6 S N-Channel Switch T his device is designed for low level analog switching, sample and hold circuits and chopper stabalized amplifiers. Sourced from Proce ss 51.
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MMBFJ111
MMBFJ112
MMBFJ113
OT-23
D0M0T33
J111 national
J112
J113
25CC
J111
MMBFJ113
MARK 6C SOT-23
k20a
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diode 8109
Abstract: DDH0312 NDB7061L NDP7061L W9 diode
Text: MCE N a t i o n a l Semiconductor • J u n e 1996 " NDP7061L/ NDB7061L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancement mode power field effect transistors are produced using
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NDP7061L/
NDB7061L
bSD113D
004031b
bS01130
diode 8109
DDH0312
NDP7061L
W9 diode
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NPN RF Amplifier
Abstract: y-parameter MMBTH20 MPSH20 U407
Text: MPSH201MMBTH20 Discrete POW ER & Signal Technologies National S e m i c o n d u c t o r “ MMBTH20 MPSH20 NPN RF Transistor T h is d e v ic e is d e s ig n e d for g e n e ra l R F am plifier a n d m ixer ap p lica tio n s to 25 0 M H z w ith co lle cto r curren ts in the 1.0 m A
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LSG113Ã
b501130
NPN RF Amplifier
y-parameter
MMBTH20
MPSH20
U407
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mmbd
Abstract: No abstract text available
Text: Semiconductor' FDH / FDLL 600 FDH600 / FDLL600 D iscrete POWER & Signal Technologies National C O L O R B A N D M A R K IN G D EV ICE FDLL600 1ST B A N D RED 2N D B A N D W H IT E LL-34 DO-35 THE PLACEMENT OF THE EXPANSION GAP HAS NO RELATIONSHIP TO THE LOCATION
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DO-35
LL-34
fdll600
MMBD1201-1205
004D5L1
mmbd
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027Q
Abstract: NDS336P
Text: M ay 1996 National & Semiconductor PRELIMINARY NDS336P P-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These P-Channel lo g ic level enhancem ent m ode pow er fie ld effect tran sisto rs are produced using N ationals proprietary, high cell density, DMOS
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NDS336P
--125-C
LSD1130
027Q
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27E SOT-23
Abstract: 27E 9 sot23 CK200 501MT BCW68G T092
Text: BCW68G ^ Discrete POWER & Signal Technologies Æ^m N a t i o n a l Semiconductor' BCW68G PNP General Purpose Amplifier This device is designed for general purpose amplifier and switching applications at currents to 500 mA. Sourced from Process 63. A b s o lu t e
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BCW68G
OT-23
b5D1130
LS01130
27E SOT-23
27E 9 sot23
CK200
501MT
BCW68G
T092
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l5 transistor PNP
Abstract: PNP DARLINGTON SOT-23 MMBTA64 MPSA64 PZTA64
Text: MPSA641 MMBTA641PZTA64 _ National D iscrete P O W E R & S ig n a l T e ch n o lo g ie s S e m i c o n d u c t o r ' “ ß MPSA64 MMBTA64 PZTA64 SOT-23 SOT-223 Mark: 2V PNP Darlington Transistor This device is designed for applications requiring extremely high
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MPSA64
MMBTA64
OT-23
PZTA64
OT-223
004G77S
l5 transistor PNP
PNP DARLINGTON SOT-23
MMBTA64
MPSA64
PZTA64
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NDB7052L
Abstract: NDP7052L
Text: %/ National Semiconductor~ A p r il 1 9 9 6 A D V A N C E IN F O R M A T IO N NDP7052L / NDB7052L N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These logic level N-Channel enhancem ent m ode p o w e r fie ld effect transistors are produced using
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NDP7052L/
NDB7052L
bSD113D
NDP7052L
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NDT452P
Abstract: No abstract text available
Text: National Semiconductor" June 1996 NDT452P P-Channel Enhancement Mode Fi Effect Transistor Features General Description These P-Channel enhancem ent m od e p o w e r field effect transistors are produced using N ational's proprietary, h ig h cell density, DMOS tech no lo g y.
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NDT452P
125-c
b501130
NDT452P
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NZT6715
Abstract: TN6715A
Text: TN6715AI NZT6715 & _ D iscrete P O W E R & S ig n a l Technologies National Se m i ro n d u c I o r " TN6715A NZT6715 SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A.
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TN6715A
O-226
NZT6715
OT-223
b501130
0Cm07Sb
b5D1130
NZT6715
TN6715A
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MMBT2907A
Abstract: MMPQ2907 NMT2907 PN2907A PZT2907A T092
Text: PN2907A I MMBT2907A / MMPQ2907/ NMT2907 I PZT2907A D iscrete P O W E R & S ig n a l Technologies National e t S e m i c o n d u c t o r ' " MMBT2907A PN2907A SOT-23 PZT2907A B SOT-223 Mark: 2F NMT2907 MMPQ2907 SOIC-16 ° PNP General Purpose Amplifier This device is designed for use as a general purpose amplifier
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PN2907A
MMBT2907A
PZT2907A
OT-23
OT-223
MMPQ2907
NMT2907
bS0113D
DD40ti30
bS01130
MMPQ2907
NMT2907
PN2907A
PZT2907A
T092
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NZT6729
Abstract: TN6729A
Text: TN6729A / NZT6729 & D iscrete PO W ER & S ig n a l Technologies National Semiconductor" NZT6729 TN6729A SOT-223 PNP General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA.
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TN6729A
NZT6729
O-226
OT-223
004G745
b5D1130
DM0743
NZT6729
TN6729A
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NDT410EL
Abstract: No abstract text available
Text: & June 1996 National Semi conduct or " NDT410EL N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel logic level enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDT410EL
OT-223
004006b
NDT410EL
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diode RN 1220
Abstract: NDT455N diode 561
Text: J L J National Semiconductor” July 1 9 9 6 NDT455N N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel lo g ic level enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's p ro p rie ta ry, hig h cell density, DMOS
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NDT455N
OT-223
LSD113D
00401EÃ
diode RN 1220
NDT455N
diode 561
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025Q
Abstract: NDS8425
Text: June 1996 National ADVANCE INFORMATION Semiconductor" NDS8425 Single N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS8425
bS0113G
025Q
NDS8425
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TN6717A
Abstract: NZT6717
Text: TN6717AI NZT6717 & D iscrete P O W E R & S ig n a l Technologies National Semiconductor" NZT6717 TN6717A SOT-223 NPN General Purpose Amplifier This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.0 A.
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NZT6717
OT-223
LS01130
O-226
TN6717A
NZT6717
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NDS9435A
Abstract: No abstract text available
Text: N a tio n a l Semiconductor M ay 1996 " NDS9435A Single P-Channel Enhancement Mode Field Effect Transistor General Description Features These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDS9435A
NDS9435A
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NDS8839H
Abstract: Complementary MOSFET Half Bridge
Text: M arc h 1 9 9 6 National Semiconductor ~ NDS8839H Complementary MOSFET Half Bridge General Description Features These Complementary MOSFET half bridge devices are produced using National's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
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NDS8839H
bS0113D
NDS8839H
Complementary MOSFET Half Bridge
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supersot-3
Abstract: 2T3 transistor NDS335N FR 014 S0113D
Text: M ay 19 96 PRELIMINARY N at i o n a l Semiconductor~ NDS335N N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N -Channel logic level enhancement mode power field effect transistors are produced using Nationals proprietary, high cell density, DMOS
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NDS335N
OT-23
OT-23)
NDS33SN
supersot-3
2T3 transistor
NDS335N
FR 014
S0113D
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MMBTA56
Abstract: MPSA56 PZTA56
Text: MPSA56 1MMBTA561PZTA56 & D iscrete POW ER & S ig n a l Technologies National Semiconductor" MPSA56 PZTA56 MMBTA56 ♦ S O T -2 2 3 PNP General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 73.
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PZTA56
OT-223
D0M0774
MMBTA56
MPSA56
PZTA56
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