NSDU57
Abstract: 0410 NSDU51 2N4030 2N4031 2N4032 2N4033 2N4036 2N4037 2N4314
Text: NATL SEMICOND {DISCRETE} 6 5 0 1130 NATL BÛ SEMICOND, D E | b S 0 1 1 3 0 DOBSHSM 1 | 28C D I S C R E TE? T ~ Test Conditions l l " CL N <£> r» <0 CO CO ' r<0 r* «5 CO co r ID Ed P<0 r- r>. <0 tf> r-» ID 35454 z y (O D " 0 - 0 / o r- z " 0 s' 3 0
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2N4030
2N4031
2N4032
2N4033
NSDU57
0410
NSDU51
2N4036
2N4037
2N4314
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Tf 227
Abstract: MMBT2369A MMPQ2369 PN2369A SOIC-16
Text: PN2369A MMBT2369A MMPQ2369 Discrete P O W E R & S ig n a l Technologies National I Semiconductor' MMPQ2369 MMBT2369A I PN2369A SOT-23 B SOIC-16 Mark: 1S NPN Switching Transistor T h is d e v ic e is d e s ig n e d for high s p e e d saturatio n sw itching a t collector
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PN2369A
MMBT2369A
MMPQ2369
OT-23
SOIC-16
bS01130
0040bc
Tf 227
MMBT2369A
MMPQ2369
PN2369A
SOIC-16
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4-221
Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9958
b501130
0Q400bl
4-221
transistor mosfet n-ch drain current
NDS9958
Dual N & P-Channel MOSFET
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BAV19
Abstract: BAV20 BAV21 FDH400
Text: BAV19 / BAV20 / BAV21 Discrete POWER & Signal Technologies National Semiconductor' BAV19 / 20 / 21 DO-35 High Voltage General Purpose Diode Sourced from Proce ss 1J. N S C alternate for B A V 1 9 & BAV20: FDH400. Absolute Maximum Ratings* Symbol W lv TA = 25°C unless otherwise noted
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BAV19
DO-35
BAV19
BAV20:
FDH400.
BAV20
BAV21
bSD1130
b5G1130
FDH400
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NDS9945
Abstract: 2501lA
Text: National May 1996 Semiconductor" NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancem ent m od e pow er fie ld effect tran sisto rs are produced using N ational's proprietary, high cell density, DMOS technology.
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NDS9945
bSD113G
b5G1130
004DGDÃ
NDS9945
2501lA
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NDS9942
Abstract: p channel mosfet
Text: National e * M a y 19 96 Semiconductor" NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS
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NDS9942
SD1130
NDS9942
p channel mosfet
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LC 500-S
Abstract: 2N5551 MMBT5551 S4002
Text: 2N5551 I MMBT5551 & D iscrete P O W ER & S ig n a l T echnologies _ National S e m i c o n d u c t o r ” MMBT5551 2N5551 NPN General Purpose Amplifier T h is d e v ic e is d e s ig n e d for g en e ral pu rp ose high voltage am plifiers an d g a s d isc h a rg e d isp la y driving. S o u rc e d from P ro c e s s 16.
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b5G1130
LC 500-S
2N5551
MMBT5551
S4002
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TRANSISTOR 2SC 950
Abstract: NDT454P c25f
Text: ß National Semiconductor" June 1996 NDT454P P-Channel Enhancement Mode Field Effect Transistor Features General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
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NDT454P
Hig13.
OT-223
Vos--10V
bS0113D
D0401SE
TRANSISTOR 2SC 950
NDT454P
c25f
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NDS8928
Abstract: ab-5 national
Text: National Semiconductor July 1996 ” NDS8928 Dual N & P-Channel Enhancement Mode Field Effect Transistor Features General Description These dual N- and P-Channel enhancem ent m ode p ow er fie ld effect tran sisto rs are produced using N ational's pro p rie ta ry, h ig h cell density, DMOS
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NDS8928
b5D113D
bSD113D
NDS8928
ab-5 national
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