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Ampleon BLF7G22L-130,118 RF MOSFET LDMOS 28V SOT502A
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DigiKey	BLF7G22L-130,118	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF7G22L-200,112 RF MOSFET LDMOS 28V SOT502A
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DigiKey	BLF7G22L-200,112	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF7G22L-200,118 RF MOSFET LDMOS 28V SOT502A
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DigiKey	BLF7G22L-200,118	Cut Tape				1 - 10 - 100 - 1000 - 10000 -	Buy Now
	BLF7G22L-200,118	Digi-Reel			1	1 $96.44 10 $96.44 100 $96.44 1000 $96.44 10000 $96.44	Buy Now
	BLF7G22L-200,118	Reel				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Ampleon BLF7G22L-160,112 RF MOSFET LDMOS 28V SOT502A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLF7G22L-160,112	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Rochester Electronics LLC BLF7G22LS-160,112 RF PFET, 1-ELEMENT, S BAND, SILI
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	BLF7G22LS-160,112	Tube			4	1 - 10 $93.52 100 $93.52 1000 $93.52 10000 $93.52	Buy Now

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BLF7G22L Datasheets (42)

Part	Manufacturer	Description	Datasheet Type	PDF
BLF7G22L-100P	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF7G22L-100P,112	NXP Semiconductors	BLF7G22L-100P - Power LDMOS transistor, SOT1121A Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-100P,118	NXP Semiconductors	BLF7G22L-100P - Power LDMOS transistor, SOT1121A Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF
BLF7G22L-130	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF7G22L-130,118	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18.5DB SOT502A	Original	PDF
BLF7G22L-130,112	NXP Semiconductors	BLF7G22L-130 - Power LDMOS transistor, SOT502A Package, Standard Marking, ICS Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-130,118	NXP Semiconductors	BLF7G22L-130 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD	Original	PDF
BLF7G22L-130,118	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, TRANSISTOR PWR LDMOS SOT502A	Original	PDF
BLF7G22L-130N,112	NXP Semiconductors	BLF7G22L-130N - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-160	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF7G22L-160,118	Ampleon USA	Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - RF FET LDMOS 65V 18DB SOT502A	Original	PDF
BLF7G22L-160,112	NXP Semiconductors	BLF7G22L-160 - Power LDMOS transistor, SOT502A Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-160,118	NXP Semiconductors	RF FETs, Discrete Semiconductor Products, TRANS LDMOS SOT502A	Original	PDF
BLF7G22L-160,118	NXP Semiconductors	BLF7G22L-160 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF

BLF7G22L-200	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF7G22L-200,112	NXP Semiconductors	BLF7G22L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-200,118	NXP Semiconductors	BLF7G22L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD	Original	PDF
BLF7G22L-250P	NXP Semiconductors	Power LDMOS transistor	Original	PDF
BLF7G22L-250P,112	NXP Semiconductors	BLF7G22L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, IC'S Tube - DSC Bulk Pack	Original	PDF
BLF7G22L-250P,118	NXP Semiconductors	BLF7G22L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD, 13"	Original	PDF

BLF7G22L Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
BLF7G22LS-200 Abstract: BLF7G22L BLF7G Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 01 — 19 April 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L BLF7G	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 3 — 1 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-250PB; BLF7G22LS-250PB Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1.	Original	BLF7G22L-250PB; BLF7G22LS-250PB	PDF
ATC100B Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185 Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185	PDF
78L08 Abstract: BLF7G22LS-130 MMBT2222 2N2222 nxp 544 Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 02 — 25 February 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 78L08 MMBT2222 2N2222 nxp 544	PDF
BLF7G22LS-100P Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 1 — 19 May 2011 Objective data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P BLF7G22LS-100P	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 2 — 10 November 2011 Preliminary data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1.	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130	PDF
j597 Abstract: TRANSISTOR j589 Text: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 2 — 28 October 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P j597 TRANSISTOR j589	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200	PDF
ATC100B Abstract: AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD Text: BLF7G22L-130N Power LDMOS transistor Rev. 1 — 25 February 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130N ATC100B AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD	PDF
BLF7G22LS-200 Abstract: BLF7G22L Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 2 — 28 December 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200 BLF7G22LS-200 BLF7G22L	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-200; BLF7G22LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-200; BLF7G22LS-200 BLF7G22L-200 7G22LS-200	PDF

Untitled Abstract: No abstract text available Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 4 — 20 January 2011 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130	PDF
avx1206 Abstract: BLF7G22LS-130 TRANSISTOR BC 135 ATC100B RO4350 PLW70 Text: BLF7G22LS-130 Power LDMOS transistor Rev. 01 — 2 February 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22LS-130 BLF7G22LS-130 avx1206 TRANSISTOR BC 135 ATC100B RO4350 PLW70	PDF
flanged pin Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P flanged pin	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 2.1 — 2 November 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160	PDF
smd J476 Abstract: 1 Gp 36 800B RF35 BLF7G22L-160 481gp 1gp36 Text: BLF7G22L-160; BLF7G22LS-160 Power LDMOS transistor Rev. 1 — 27 April 2011 Preliminary data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-160; BLF7G22LS-160 BLF7G22L-160 7G22LS-160 smd J476 1 Gp 36 800B RF35 481gp 1gp36	PDF
BLF7G22L Abstract: BLF7G22L-250P 4102 transistor 3155 power transistor Text: BLF7G22L-250P; BLF7G22LS-250P Power LDMOS transistor Rev. 01 — 6 May 2010 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz. Table 1. Typical performance	Original	BLF7G22L-250P; BLF7G22LS-250P BLF7G22L-250P 22LS-250P BLF7G22L 4102 transistor 3155 power transistor	PDF
RO4350 30mil Abstract: transistor BC 341-6 BLF7G22L-130 TRANSISTOR BC 135 ATC100B AVX1206 BLF7G22LS-130 RO4350 TRANSISTOR BC 338 SMD Text: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 3 — 18 November 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 RO4350 30mil transistor BC 341-6 TRANSISTOR BC 135 ATC100B AVX1206 BLF7G22LS-130 RO4350 TRANSISTOR BC 338 SMD	PDF
Untitled Abstract: No abstract text available Text: BLF7G22L-100P; BLF7G22LS-100P Power LDMOS transistor Rev. 3 — 2 January 2012 Product data sheet 1. Product profile 1.1 General description 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance	Original	BLF7G22L-100P; BLF7G22LS-100P BLF7G22L-100P	PDF
NJM 78L08UA-ND Abstract: nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor Text: AN10885 Doherty RF performance analysis using the BLF7G22LS-130 Rev. 01 — 6 January 2010 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , UMTS, W-CDMA,	Original	AN10885 BLF7G22LS-130 BLF7G22LS-130 AN10885 NJM 78L08UA-ND nxp 544 S0805W104K1HRN S0805W104K1HRN-P4 RO3000 digital Pre-distortion 1J503S digital predistortion dpd 2carrier WCDMA CRCW2010499RFKEF d 2095 transistor	PDF

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BLF7G22L Search Results

BLF7G22L Price and Stock

Ampleon BLF7G22L-130,118

Ampleon BLF7G22L-200,112

Ampleon BLF7G22L-200,118

Ampleon BLF7G22L-160,112

Rochester Electronics LLC BLF7G22LS-160,112

BLF7G22L Datasheets (42)

BLF7G22L Datasheets Context Search

BLF7G22LS-200

Untitled

Untitled

ATC100B

78L08

BLF7G22LS-100P

Untitled

Untitled

Untitled

j597

Untitled

ATC100B

BLF7G22LS-200

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Untitled

Untitled

avx1206

flanged pin

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smd J476

BLF7G22L

RO4350 30mil

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NJM 78L08UA-ND