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    BLF7G20 Price and Stock

    Ampleon BLF7G20LS-90PH

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF7G20L-200,118

    RF MOSFET LDMOS 28V SOT502A
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    Ampleon BLF7G20L-90P,118

    RF MOSFET LDMOS 28V LDMOST
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    Ampleon BLF7G20L-90P,112

    RF MOSFET LDMOS 28V LDMOST
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    Rochester Electronics BLF7G20L-90P,112 92 1
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    Rochester Electronics LLC BLF7G20L-90P,112

    RF MOSFET LDMOS 28V LDMOST
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    DigiKey BLF7G20L-90P,112 Bulk 4
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    Find more BLF7G20 price and stock on Findchips.com

    BLF7G20 Datasheets (27)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BLF7G20L-160P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20L-200 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20L-200,112 NXP Semiconductors BLF7G20L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF7G20L-200,118 NXP Semiconductors BLF7G20L-200 - Power LDMOS transistor, SOT502A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G20L-250P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20L-250P,112 NXP Semiconductors BLF7G20L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF7G20L-250P,118 NXP Semiconductors BLF7G20L-250P - Power LDMOS transistor, SOT539A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G20L-90P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20L-90P,112 NXP Semiconductors BLF7G20L-90P - Power LDMOS transistor, SOT1121A Package, Standard Marking, ICS Tube - DSC Bulk Pack Original PDF
    BLF7G20L-90P,118 NXP Semiconductors BLF7G20L-90P - Power LDMOS transistor, SOT1121A Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G20LS-140P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20LS-140P,112 NXP Semiconductors BLF7G20LS-140P - Power LDMOS transistor, SOT1121B Package, Standard Marking, ICS Tube - DSC Bulk Pack Original PDF
    BLF7G20LS-140P,118 NXP Semiconductors BLF7G20LS-140P - Power LDMOS transistor, SOT1121B Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G20LS-160P NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20LS-200 NXP Semiconductors AN10921 - BLF7G20LS-200 Doherty 1.805-1.88 GHz RF power amplifier Original PDF
    BLF7G20LS-200 NXP Semiconductors AN10944 - 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Original PDF
    BLF7G20LS-200 NXP Semiconductors Power LDMOS transistor Original PDF
    BLF7G20LS-200,112 NXP Semiconductors BLF7G20LS-200 - Power LDMOS transistor, SOT502B Package, Standard Marking, Tube - DSC Bulk Pack Original PDF
    BLF7G20LS-200,118 NXP Semiconductors BLF7G20LS-200 - Power LDMOS transistor, SOT502B Package, Standard Marking, Reel Pack, SMD Original PDF
    BLF7G20LS-250P NXP Semiconductors Power LDMOS transistor Original PDF

    BLF7G20 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    BLF7G20L-90P

    Abstract: 1800 ldmos BLF7G20LS-90P RF35 PLW70
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 01 — 28 April 2010 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20L-90P; BLF7G20LS-90P ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P 1800 ldmos BLF7G20LS-90P RF35 PLW70 PDF

    BLF7G20LS-140P

    Abstract: 850 SMD Rework Station RF35
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20LS-140P ACPR400k ACPR600k BLF7G20LS-140P 850 SMD Rework Station RF35 PDF

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 2 — 27 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 BLF7G20 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 4 — 12 July 2013 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance


    Original     		BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P PDF

    SmD TRANSISTOR a75

    Abstract: No abstract text available
    Text: BLF7G20LS-140P Power LDMOS transistor Rev. 2 — 17 August 2010 Product data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20LS-140P ACPR400k ACPR600k SmD TRANSISTOR a75 PDF

    OP6180

    Abstract: CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0
    Text: AN10951 1805 MHz to 1880 MHz asymmetrical Doherty amplifier with the BLF7G20LS-90P and BLF7G21LS-160P Rev. 1 — 10 December 2010 Application note Document information Info Content Keywords Doherty architecture, Digital PreDistortion DPD , IS-95, multi-carrier


    Original     		AN10951 BLF7G20LS-90P BLF7G21LS-160P IS-95, BLF7G20LS-90P, BLF7G21LS-160P OP6180 CRCW08050R0FKEA 8425 3214W-1-201E pl-46 panasonic inductor date code NH transistor c114 transistors transistor c114 chip nxp 544 GRM31CR72A105KA0 PDF

    j353 transistor

    Abstract: BLF7G20LS-250P transistor j353 800B JESD625-A RF35
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 3 — 1 March 2011 Product data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1. Typical performance


    Original     		BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P j353 transistor BLF7G20LS-250P transistor j353 800B JESD625-A RF35 PDF

    ATC800B

    Abstract: BLF7G20LS-200 BLF7G20L-200
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 3 — 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B BLF7G20LS-200 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 PDF

    OP6180

    Abstract: OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 BLF7G20LS-200 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118
    Text: AN10921 BLF7G20LS-200 Doherty 1.805 to 1.88 GHz RF power amplifier Rev. 01 — 16 July 2010 Application note Document information Info Content Keywords BLF7G20LS-200, Doherty, RF, LDMOS Abstract This application note describes the design and performance of a power


    Original     		AN10921 BLF7G20LS-200 BLF7G20LS-200, OP6180 OP6180-DEV 4G base station power amplifier OP6180-DEVS AN10921 ad9122 TRANSISTOR c104 transistor c114 diagram transistor c118 PDF

    8140115

    Abstract: 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 2 — 9 September 2010 Preliminary data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1880 MHz. Table 1.


    Original     		BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P 8140115 8140 SOURIAU BLF7G20LS-250P Souriau 23N-50 8140 800B RF35 BLF7G PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-250P; BLF7G20LS-250P Power LDMOS transistor Rev. 01 — 16 December 2009 Objective data sheet 1. Product profile 1.1 General description 250 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1.


    Original     		BLF7G20L-250P; BLF7G20LS-250P BLF7G20L-250P 7G20LS-250P PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-160P; BLF7G20LS-160P Power LDMOS transistor Rev. 01 — 22 June 2010 Objective data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20L-160P; BLF7G20LS-160P ACPR400k ACPR600k BLF7G20L-160P 7G20LS-160P PDF

    W13B

    Abstract: No abstract text available
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to


    Original     		BLF7G20L-90P; BLF7G20LS-90P to1525 ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P W13B PDF

    Rogers 3006

    Abstract: transistor c118 BLF7G20LS-200 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109
    Text: AN10944 1930 MHz to 1990 MHz Doherty amplifier using the BLF7G20LS-200 Rev. 1 — 4 January 2011 Application note Document information Info Content Keywords RF power transistors, Doherty architecture, LDMOS, power amplifier, RF performance, Digital PreDistortion DPD , W-CDMA, BLF7G20LS-200


    Original     		AN10944 BLF7G20LS-200 BLF7G20LS-200 Rogers 3006 transistor c118 R105 NJM 78L08UA-ND NJM78L08UA transistor NPN c115 AN1094 C106 C109 PDF

    Untitled

    Abstract: No abstract text available
    Text: BLF7G20L-90P; BLF7G20LS-90P Power LDMOS transistor Rev. 2 — 20 October 2011 Product data sheet 1. Product profile 1.1 General description 90 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz, designed for operation at 1427 MHz to1525 MHz, 1805 MHz to


    Original     		BLF7G20L-90P; BLF7G20LS-90P to1525 ACPR400k ACPR600k BLF7G20L-90P 7G20LS-90P PDF

    850 SMD Rework Station

    Abstract: BLF7G20LS-140P RF35 quick 850 SMD Rework Station BLF7G20L-140P
    Text: BLF7G20L-140P; BLF7G20LS-140P Power LDMOS transistor Rev. 01 — 21 April 2010 Objective data sheet 1. Product profile 1.1 General description 140 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz. Table 1. Typical performance


    Original     		BLF7G20L-140P; BLF7G20LS-140P ACPR400k ACPR600k BLF7G20L-140P 7G20LS-140P 850 SMD Rework Station BLF7G20LS-140P RF35 quick 850 SMD Rework Station PDF

    ATC800B

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 4 — 22 July 2011 Product data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B PDF

    ATC800B

    Abstract: No abstract text available
    Text: BLF7G20L-200; BLF7G20LS-200 Power LDMOS transistor Rev. 01 — 3 June 2010 Objective data sheet 1. Product profile 1.1 General description 200 W LDMOS power transistor for base station applications at frequencies from 1805 MHz to 1990 MHz. Table 1. Typical performance


    Original     		BLF7G20L-200; BLF7G20LS-200 BLF7G20L-200 7G20LS-200 ATC800B PDF

    Untitled

    Abstract: No abstract text available
    Text: Enabling the Mobile Experience High Performance RF for wireless infrastructure Unleash the performance of your RF and microwave designs www.nxp.com/unleash-rf Enabling the Mobile Experience The future is mobile. And mobility means the freedom to innovate, communicate, connect and win.


    Original     		PDF

    sot1121a

    Abstract: J226 SMD
    Text: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance


    Original     		BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P sot1121a J226 SMD PDF

    QUBiC4X

    Abstract: BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr
    Text: Your partner in mobile communication infrastructure design High Performance RF for wireless infrastructure Looking for a partner who can help you meet the challenges of wireless infrastructure base station design? As a global leader in RF technology and component design, NXP Semiconductors offers


    Original     		12x12 LQFP48 QUBiC4X BGX7300 power amplifier NXP BLF7G20LS-90P BGA7202 printed antenna dcs 1800 BLP7G10S-140P BLF578XR qubic4 BGU705 Thin Film Resistors SiCr PDF

    UPC8236

    Abstract: MRFE6VP m74 7 segment display Mounting and Soldering of RF transistors MOBILE jammer GSM 1800 MHZ circuit diagram BLF4G08LS-160A rf Amplifier mhz Doherty 470-860 RF transceiver 802.11AC AN10882 m74 7 segment display input
    Text: RF Manual 16 edition th Application and design manual for High Performance RF products June 2012 NXP enables you to unleash the performance of next-generation RF and microwave designs NXP's RF Manual is one of the most important reference tools on the market for today’s


    Original     		PDF

    filter for GPS spice

    Abstract: BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode
    Text: RF手册第14版 用于高性能RF产品的应用和设计手册2010年5月 恩智浦半导体RF手册第14版 3 高性能RF适用于最高要求的应用 恩智浦RF手册令设计更简易 恩智浦RF手册–当今RF设计市场上最重要的参考工具之一–展示了我们从小信号到大功率


    Original     		RF20105 67SiGe JESD204A-DACADC JESD204A- AEC100 BFR90 BFQ33 TFF1004HN JESD204A BLF578) filter for GPS spice BLF578 diode smd marking BUF GP 750 BLF7G10-300p AX 2008 lqfp48 GP 809 DIODE BF1118 MPAL2731M15 bgu7051 BB 505 Varicap Diode PDF