Untitled
Abstract: No abstract text available
Text: BC327CP Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V) I(C) Max. (A)800m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nx @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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BC327CP
Freq100M
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180M 290
Abstract: BC157B BCY79CP 6p6p BCY79BP LOW-POWER SILICON PNP BCB07-40 bcb07 BC327BP MMBA811CB
Text: LOW-POWER SILICON PNP Item Number Part Number 10 BC307B5 JE9015C JE9015C TMPT813S4 BCY79 BCY79P BCY79VII BCW70 BCF70 BCF70 ~g~jgR 15 20 BCF70R BCB57B BC177P BC177PK BC307P BC307PK BC307PL BC560B ~~~7AR 25 30 1T130A KSA539 KSA707 2SA564A BCB60AR BCB60AR BCB60AR
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BC307B5
JE9015C
TMPT813S4
BCY79
BCY79P
BCY79VII
BCW70
BCF70
BCF70
180M 290
BC157B
BCY79CP
6p6p
BCY79BP
LOW-POWER SILICON PNP
BCB07-40
bcb07
BC327BP
MMBA811CB
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MMBR2857LT1
Abstract: bcy59z 2N2222A zetex MICROSEMI 2N2222A MPSA96 BCY55 2N2907 PHILIPS SEMICONDUCTOR 2N2369 philips BC327BP BAV99 ON Semi
Text: 145 Adams Avenue Hauppauge, NY 11788 Phone 631 435-1110 Fax (631) 435-1824 www.centralsemi.com/eol EOL –LIFE SUPPORT List as of: March 30, 2001 Central Semiconductor Corp. will continue to manufacture the discrete semiconductors included on this list as long as there is an industry demand. For an update of this list please contact your sales
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1N961B
1N962B
5KE100CA
TIP32A
TIP32B
TIP32C
MMBR2857LT1
bcy59z
2N2222A zetex
MICROSEMI 2N2222A
MPSA96
BCY55
2N2907 PHILIPS SEMICONDUCTOR
2N2369 philips
BC327BP
BAV99 ON Semi
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2N3819 MOTOROLA
Abstract: mmbr2857lt1 bcy59z BCY55 MBS4993 2N2222a PHILIPS SEMICONDUCTOR MOTOROLA 1N4751A 2N2222A zetex 2C4209WP MMBR2857
Text: EOL Life Support Program Revised: 3 May 2007 EOL Life Support Program Listing as of 05/03/07 EOL ITEM# MANUFACTURER NAME A12FR10 A12FR100 A12FR120 A12FR20 A12FR40 A12FR60 A12FR80 A12F10 A12F100 A12F120 A12F20 A12F40 A12F60 A12F80 A16FR10 A16FR100 A16FR120
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A12FR10
A12FR100
A12FR120
A12FR20
A12FR40
A12FR60
A12FR80
A12F10
A12F100
A12F120
2N3819 MOTOROLA
mmbr2857lt1
bcy59z
BCY55
MBS4993
2N2222a PHILIPS SEMICONDUCTOR
MOTOROLA 1N4751A
2N2222A zetex
2C4209WP
MMBR2857
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m 60 n 03 g10
Abstract: No abstract text available
Text: ZETEX SEMICONDUCTORS IbE D • Tï7057fl DOOtfl? 4 ■ ZETB SEMICONDUCTOR DICE ELECTRICAL CHARACTERISTICS PNP SWITCHING TRANSISTORS 2N2907A 2N2907 BCY70 BCY71 BCY72 2N4403 2N3906 2N2894 ZTX510 VCbo Min V CE0 Min T on Max 31 Pice type Volts Volts ns . ns 60
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7057fl
2N2907A
2N2907
BCY70
BCY71
BCY72
2N4403
m 60 n 03 g10
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BC338C
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military
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MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
BC328A
BC328B
BC328C
BC338C
2N1893
2N2102
2N2405
2N4036
BFX84
BFX85
ZT86
ZT88
ZT91
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BC337b
Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector
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2N3262
T0-39
T0-18
ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC337b
bc327b
2N2102
2N4036
BCY65E
BFX84
BFX85
ZT86
ZT88
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BCY56
Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple ment
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BSY51
BSY52
BC107
BCY56
2N1131
2N1132
2N4037
BC177
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BC337B
Abstract: m 60 n 03 g10 BC327C
Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA
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ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
2N1613
BC337B
m 60 n 03 g10
BC327C
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BC338C
Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.
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ZTX455
ZTX454
ZTX653
ZTX753
ZTX453
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC338C
ZTX452
MPSA06
MPSA56
ZTX651
ZTX652
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bc177
Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE
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ZTX552
ZTX452
MPSA56
MPSA06
BC556P
BC546P
ZTX551
ZTX451
BFS98
MPSA55
bc177
BFS59
ZTX452
BC546P
BFS61
MPSA06
ZTX451
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ZTX651
Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
Text: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.
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ZTX6535
ZTX753
ZTX652
ZTX752
ZTX651Â
ZTX751
ZTX650
ZTX750
ZTX6495
ZTX749
ZTX651
ZTX692B
ZTX749
ZTX750
ZTX751
ZTX752
ZTX753
Scans-00107860
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2N1893
Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
2N1893
2N2102
2N2405
2N4036
BFX85
BSY55
ZT86
ZT88
ZT91
ZT92
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BC337C
Abstract: bc327c BC338C bc337b 2N1131 2N1132 2N3053 2N4037 2N696 BC107
Text: NPN LOW LEVEL 2N3053 Max VcE sat at V ceO U 'C: < Type o< CD Max V mA V mA mA 60 40 700 1.4 150 15 2N696 60 40 2N697 60 40 BFY51 60 30 !c Ib h FE Min. Max. 50 250 20 60 15 40 120 15 40 500 1.5 150 15 500 1.5 150 1000 0.35 150 at Continued Min f T at Pto,
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2N3053
2N4037
2N696
2N1131
2N697
2N1132
BFY51
BC107
BC177
BCY59
BC337C
bc327c
BC338C
bc337b
2N1131
2N1132
2N4037
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bc327b
Abstract: bc140 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88
Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
bc140
2N1893
2N2102
2N2405
2N4036
BFX85
BSY55
ZT86
ZT88
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BFS98
Abstract: ZTX452 ZTX750 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451 ZTX453
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AMPLIFIERS, DRIVERS and OUTPUT STAGES, OSCILLATORS, A ND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
MPSA55
ZTX750
BFS98
BC556P
BFS61
MPSA56
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ZTX453
Abstract: BFS98 BC338C ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
Text: TABLE 1 : NPN GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal amplification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY AM PLIFIERS, DRIVERS and OUTPUT STA G ES, OSCILLATORS, AND GENERAL PURPOSE
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ZTX453
ZTX452
ZTX552
MPSA06
MPSA56
BC546P
BC556P
ZTX451
MPSA55
ZTX750
BFS98
BC338C
BC556P
BFS61
MPSA56
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BC337B
Abstract: BFS98 ZTX338 ZTX452 MPSA06 ZTX451 ZTX454 ZTX551 ZTX552 ZTX553
Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 1 amp with power dissipation capabilities of 1 0 0 0 mW at 2 5 ° C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Sw itching, etc.
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1000mW
ZTX4555
ZTX555
ZTX454
ZTX554
ZTX453S
ZTX553
ZTX452
ZTX552
MPSA06
BC337B
BFS98
ZTX338
ZTX451
ZTX551
ZTX552
ZTX553
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BC337B
Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A
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ZTX653
ZTX453
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
MPSA05
ZTX650
BC337B
BC338B
BC338C
BC327B
BC328B
BC337C
ZTX550
BFV52
ZTX751
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BCY56
Abstract: 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91
Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
BCY56
2N1893
2N2102
2N2405
2N4036
BFX85
BSY55
ZT86
ZT88
ZT91
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BSY55
Abstract: m 60 n 03 g10 BCY56 2N1893 2N2102 2N2405 2N4036 BFX85 ZT86 ZT88
Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military
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ZTX552
MPSA56
ZTX751
ZTX551
MPSA55
ZTX750
ZTX550
BC327A
BC327B
BC327C
BSY55
m 60 n 03 g10
BCY56
2N1893
2N2102
2N2405
2N4036
BFX85
ZT86
ZT88
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BC337b
Abstract: BC327B 1005 NPN ZTX550 ZTX751 2N1613 2N1893 BFY50 MPSA06 ZT91
Text: SEMICONDUCTOR DICE NPN M EDIU M POWER Volts Volts nA ^CES 100 40 40 40 100 40 50 100 50 30 40 100 60 50 100 100 40 100 160 250 100 60 100 300 200 120 120 300 150 - 300 150 - 120 300 200 - 300 300 - 250 400 630 300 - 300 VcE sat •c < at Volts Min. Max. 120 100 100 100
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ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
ZTX552
BC337b
BC327B
1005 NPN
ZTX550
ZTX751
2N1613
ZT91
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Untitled
Abstract: No abstract text available
Text: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711
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ZTX653
ZTX453
2N1893
ZTX652
ZTX452
MPSA06
ZTX651
ZTX451
BFY50
2N1613
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