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    Zetex / Diodes Inc ZTX652STZ

    Small Signal Bipolar Transistor, 2A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA ZTX652STZ 1,120
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    ZTX652 Datasheets (19)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    ZTX652 Philips Semiconductors Rectifier diodes ultrafast, rugged Original PDF
    ZTX652 Zetex Semiconductors NPN SILICON PLANAR(MEDIUM POWER TRANSISTORS) Original PDF
    ZTX652 Zetex Semiconductors NPN SILICON PLANAR MEDIUM POWER TRANSISTOR Original PDF
    ZTX652 Ferranti Semiconductors Quick Reference Guide 1985 Scan PDF
    ZTX652 Ferranti Semiconductors Super E-Line Transistors 1982 Scan PDF
    ZTX652 Unknown Basic Transistor and Cross Reference Specification Scan PDF
    ZTX652 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652 Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    ZTX652 Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    ZTX652 Zetex Semiconductors Quick Reference Guide (Discrete Semiconductors) 1991 Scan PDF
    ZTX652K Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652K Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652L Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652M Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652M Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652S Unknown Shortform Transistor PDF Datasheet Short Form PDF
    ZTX652S Unknown Shortform Transistor PDF Datasheet Short Form PDF

    ZTX652 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    ZTX653

    Abstract: ztx652 Zetex ZTX653
    Text: ZTX652 Not Recommended for New Design Please Use ZTX653 ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER


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    PDF ZTX652 ZTX653 ZTX653 100lector IC/10 Zetex ZTX653

    ZTX653

    Abstract: ZTX653 equivalent ZTX652 equivalent ZTX652 DSA003771
    Text: ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt ELECTRICAL CHARACTERISTICS at Tamb = 25°C unless otherwise stated . PARAMETER ZTX652 SYMBOL MIN. TYP. Transition Frequency fT Switching Times


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    PDF ZTX652 ZTX653 500mA, 100mA, 100MHz ZTX653 ZTX653 equivalent ZTX652 equivalent ZTX652 DSA003771

    ztx653

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS ZTX652 ZTX653 ISSUE 2 – JULY 94 FEATURES * 100 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt C B E E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL ZTX652 ZTX653 UNIT


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    PDF ZTX652 ZTX653 IC/10 100ms ztx653

    Untitled

    Abstract: No abstract text available
    Text: ZTX652 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80è V(BR)CBO (V)100 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)175 I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300


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    PDF ZTX652 Freq140M StyleTO-92

    Philips stepper motor

    Abstract: fluorescent 12v circuit fluorescent tube 12v zvn4206 application TL8W zvn4206 transistor ztx fluorescent tube ZVN4206C ZVN4206G
    Text: Design Note 7 Issue 2 June 1995 Printer Stepper Motor Drivers Design Note 8 Issue 2 June 1995 8W, 12V Fluorescent Lamp 2ms/div +12V W4 W2 270 1W Current 0.5A/div W5 W1 0.015uF 250V POLYESTER + W3 + 2.2 1/4W Q2 + Control Logic Q1 8W TUBE Eg. SYLVANIA F8W/W


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    PDF 015uF TL8W/33 20v/div 068uF ZVN4206C ZTX652 20kHz Philips stepper motor fluorescent 12v circuit fluorescent tube 12v zvn4206 application TL8W zvn4206 transistor ztx fluorescent tube ZVN4206C ZVN4206G

    mn2510

    Abstract: 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"
    Text: Low voltage power bipolar transistors Selection guide October 2007 www.st.com/bipolar SOT-223 Part number NPN PNP STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 2STN1360 2STN2360 STN1802 STN851 STN951* STN715 STN817A IC [A] VCE [V] VCE sat @


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    PDF OT-223 STN878 STN724 STN690A STN749 STN888 STN826 STN790A 2STN2540 2STN1550 mn2510 2sC5200, 2SA1943, 2sc5198 sanken mn2510 TRANSISTOR REPLACEMENT GUIDE hsd882s KEC SOT89 ZTX617 TRANSISTOR REPLACEMENT GUIDE Replacement SANKEN mn2510 2sc5198 cross references 2SA1941 "cross reference"

    MRF212

    Abstract: b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603
    Text: RF POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 2SC92 2SC94 2N5590 2S01614 2S01614 TN3252 BlY21 2N5861 ~~g~~~~ 25 30 ZTX649 B0505 B0505 B0505 B0505•1 B0505·1 B0505·5 B0507 ~g~g~ 35 40 B0507-1 B0507·5 B0509 B0509 B0509 B0509-1 B0509-5 2N5413


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    PDF OT-161 92var StR-10 OT-123var O-220 MRF212 b0507 MRF221 motorola diode b0106A B12 nec diode 2sc94 2n5861 2N4127 MRF603

    ZTX650

    Abstract: ZTX651 FERRANTI SE60 transistor a7n ZTX652 ZTX653 Scans-00107861
    Text: FERRANTI $ semiconductors ZTX650 ZTX651 ZTX652 ZTX653 N PN S ilic o n P lan ar M edium P o w e r T ra n sisto rs FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • • • • • • • • 2A continuous lc Excellent gain characteristics to 2A High V CE0: up to 100 volts


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    PDF ZTX650 ZTX651 ZTX652 ZTX653 100ms FERRANTI SE60 transistor a7n ZTX653 Scans-00107861

    BC337B

    Abstract: m 60 n 03 g10 BC327C
    Text: SEM ICO N D U CTOR DICE NPN MEDIUM POWER Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711 ZT90 MPSA05 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C ZTX449 BFY52 ZTX649 + V CES V CE sat ^CBO at at lc Volts Min. Max. mA Volts Volts mA


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    PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 BC337B m 60 n 03 g10 BC327C

    ztx653

    Abstract: 2TX650 SE 130 ztx651 ZTX652 ztx650
    Text: NPN Silicon Planar Medium Power Transistors Z T X 650 ZTX651 ZTX652 ZTX653 FEATURES • 1 .5 W p o w e r d issipation a t T amb = 2 5 ° C * • 2 V co n tinu o u s ic • Excellent gain ch a ra cte ristics to 2A • High V CE0: up to 10 0 V • L o w sa tu ra tio n voltages


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    PDF ZTX651 ZTX652 ZTX653 ZTX650 SE131 ztx653 2TX650 SE 130

    ZTX650

    Abstract: ZTX651 ZTX652 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862
    Text: FERRANTI ZTX650 ZTX651 ZTX652 ZTX653 $ semiconductors NPN Silicon Planar M e d iu m Power Transistors FEATURES • 1.5W Power dissipation at Tamb = 25*Cf • 2A continuous lc • Excellent gain characteristics to 2A • High V CE0: up to 100 volts • Low saturation voltages


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    PDF ZTX650 ZTX651 ZTX652 ZTX653 100ms 605A transistor a7n 100-C ZTX653 ferranti Scans-00107862

    BC337B

    Abstract: BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751 BFY50
    Text: ELEC TRIC AL CHARACTERISTICS N.P.N. M E D IU M POW ER h "ht V cbo VcEO ICBC Min. Min. Max.atVcB @ lc Dice Type V V nA V Min. Max. m A ZTX653 ZTX453 ZTX652 ZTX452 M P SA 0 6 ZTX651 ZTX451 BFY50 M P SA 0 5 ZTX650 ZTX450 BFY51 BC337A BC337B BC337C BFV52 BC338A


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    PDF ZTX653 ZTX453 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 MPSA05 ZTX650 BC337B BC338B BC338C BC327B BC328B BC337C ZTX550 BFV52 ZTX751

    Untitled

    Abstract: No abstract text available
    Text: SbE V m T T 7 GS 7 Ô 0 Q0 7 D S 0 T23 H Z E T B T - '¿ / l- O i SEM ICO N D U CTOR DICE NPN MEDIUM POWER V CBO V CEO hFE at •CBO Min. Min. Max. at V CB Dice type Volts Volts ZTX653 ZTX453 ZT91 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613 2N1711


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    PDF ZTX653 ZTX453 2N1893 ZTX652 ZTX452 MPSA06 ZTX651 ZTX451 BFY50 2N1613

    ztx653

    Abstract: No abstract text available
    Text: NPN SILICON PLANAR MEDIUM POWER TRANSISTORS IS S U E 2 - J U L Y 94 FEATURES * 100 V o lt V CE0 * 2 A m p c o n t in u o u s c u r r e n t * L o w s a t u r a t io n v o lt a g e * Ptot=1 W att ABSOLUTE MAXIM UM RATINGS. PARAM ETER SYM BOL ZTX652 ZTX653 U N IT


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    PDF ZTX652 ZTX653 300ns. ZTX653

    ZTX751

    Abstract: ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06 MPSA56 ZTX453 ZTX454
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


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    PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 ZTX652 ZTX552 ZTX452 MPSA56 MPSA06 ZTX751 ZTX651 ZTX551 ZTX753 ZTX337 ZTX452 MPSA06

    BC338C

    Abstract: 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICON PLANAR LOW LEVEL TRANSISTORS The devices shown in this table are low level transistors designed for small and medium signal, low and medium power amplification from DC to radio frequencies in Commercial, Industrial and Military


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    PDF MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C BC328A BC328B BC328C BC338C 2N1893 2N2102 2N2405 2N4036 BFX84 BFX85 ZT86 ZT88 ZT91

    BC337b

    Abstract: bc327b 2N2102 2N3262 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88
    Text: NPN SW ITCHING TABLE 3 - NPN SILICON PLANAR MEDIUM AND HIGH SPEED SWITCHING TRANSISTORS The devices shown in this table are characterised for medium and high speed switching applications in Commercial, Industrial and Military equipments. The devices are listed in order of decreasing Breakdown Voltage VCE0 , decreasing Collector


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    PDF 2N3262 T0-39 T0-18 ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC337b bc327b 2N2102 2N4036 BCY65E BFX84 BFX85 ZT86 ZT88

    BCY56

    Abstract: 2N1131 2N1132 2N3053 2N4037 2N696 2N697 BC107 BC177 BFY51
    Text: < Type o< OD NPN LOW LEVEL V ceo M ax *c M ax V CE sat| at V mA V 'c mA Min fT at hFE at Pto, at = 2ag*C Iß M in M ax 'c m A M Hz m A mW mA 2N3053 60 40 700 1.4 150 15 50 250 150 2N696 60 40 500 1.5 150 15 20 60 120 150 150 Continued Package Com ple­ ment


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    PDF 2N3053 2N4037 2N696 2N1131 2N697 2N1132 BFY51 BSY51 BSY52 BC107 BCY56 2N1131 2N1132 2N4037 BC177

    BC338C

    Abstract: ZTX452 MPSA06 MPSA56 ZTX453 ZTX454 ZTX455 ZTX651 ZTX652 ZTX653
    Text: TABLE 7 : NPN/PNP MEDIUM POWER The transistors shown in this table have been designed to operate and provide useful gain at current levels up to 2 amps with power dissipation capabilities in excess of 1000 mW at 25°C ambient temperature. Typical application areas include: Audio Frequency Drivers and Output Stages, Relay Switching, etc.


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    PDF ZTX455 ZTX454 ZTX653 ZTX753 ZTX453 MPSA55 ZTX750 ZTX550 BC327A BC327B BC338C ZTX452 MPSA06 MPSA56 ZTX651 ZTX652

    bc177

    Abstract: BFS98 BFS59 ZTX452 BC546P BC556P BFS61 MPSA06 MPSA56 ZTX451
    Text: TABLE 2 : PNP GENERAL PURPOSE The devices shown in this table are general purpose transistors designed for small and medium signal am plification from d.c. to radio frequencies. Typical application areas include: AUDIO FREQUENCY A M PLIFIER S, D RIVERS and OUTPUT ST A G ES, O SC ILLA TO RS, AND GEN ERAL PURPO SE


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    PDF ZTX552 ZTX452 MPSA56 MPSA06 BC556P BC546P ZTX551 ZTX451 BFS98 MPSA55 bc177 BFS59 ZTX452 BC546P BFS61 MPSA06 ZTX451

    ZTX651

    Abstract: ZTX692B ZTX650 ZTX652 ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860
    Text: TABLE 8 : NPN/PNP SUPER E-LINE TYPES These devices offer the ultimate performance for TO -9 2 style package. They have been designed to operate and provide useful gain at current levels up to 6 A with power dissipation capabilities in excess of 1W at 2 5 ° C ambient temperature.


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    PDF ZTX6535 ZTX753 ZTX652 ZTX752 ZTX651Â ZTX751 ZTX650 ZTX750 ZTX6495 ZTX749 ZTX651 ZTX692B ZTX749 ZTX750 ZTX751 ZTX752 ZTX753 Scans-00107860

    2N1893

    Abstract: 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92
    Text: NPN LOW LEVEL TABLE 1 - NPN SILICO N PLANAR LOW LEVEL T R A N SIST O R S The devices show n in this table are low level transistors designed for small and medium signal, low and medium pow er amplification from D C to radio frequencies in Commercial, Industrial and Military


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    PDF ZTX552 MPSA56 ZTX751 ZTX551 MPSA55 ZTX750 ZTX550 BC327A BC327B BC327C 2N1893 2N2102 2N2405 2N4036 BFX85 BSY55 ZT86 ZT88 ZT91 ZT92

    aeg diode Si 61 L

    Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
    Text: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books


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    PDF 11tA0A12 A025A A0290 U0U55 A0291 A0292 A0305 A0306 A0A56 A0A59 aeg diode Si 61 L aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680

    ZT Ferranti

    Abstract: BF4935P SE-169 TX-550 X752 X449
    Text: ZETEX S E M I C O N D U C T O R S =IS]> D • clci7 Q S 78 0 0 0 S 0 7 S 1 M Z E T B ~T-Tl-Ol Super E-line transistors TABLE 1 : NPN/PNP SUPER E-LINE These devices offer the ultimate performance for TQ-92 style package, they have been designed to operate and provide useful gain at current


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    PDF TQ-92 ZTX752 ZTX751 ZTX749 SO-96 107il/D SE172 ZT Ferranti BF4935P SE-169 TX-550 X752 X449