Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE bbSBT31 0030310 S • SSE D B U K 437-400A B U K 437-400B P o w e rM O S tra n s is to r T -3 7 -/5 T G E N E R A L D E S C R IP T IO N N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in
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bbSBT31
37-400A
437-400B
BUK437
-400A
-400B
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BYV118-35
Abstract: M3174 BYV118 M3178
Text: ESE D N AUER PHILIPS/DI SCRET E • bbSBT31 0022^=1 5 ■ BYV118 SERIES 7 "0 3 - / 7 SCHO TTKY-BARRIER DOUBLE RECTIFIER DIODES Low-leakage, platinum -barrier double rectifier diodes in plastic envelopes featuring low forward voltage drop, low capacitance and absence o f stored charge. They are intended fo r use in switchedmode power supplies and high-frequency circuits in general, where both low conduction losses and
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bbSBT31
BYV118
BYV118-35
M3174
M3178
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lte2
Abstract: 0261 230 154 LTE21009R LTE21015R
Text: DEVELOPMENT DATA | • T his data sheet contains advance Inform ation and specifications are subject to change w ithout notice. - bbSBT31 0 0 1 ^ 5 7 3 ■ LTE21009R LTE21015R Jl N AMER P H I L I P S / D I S C R E T E ObE D -
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LTE21009R
LTE21015R
FO-41B)
lte2
0261 230 154
LTE21009R
LTE21015R
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1300 laser diode rise time
Abstract: Indium Gallium Arsenide Phosphide lasers 502CQF indium gallium arsenide phosphide OC45K laser 477 Semiconductor Laser International data by 476 diode 1300 nm Laser 40 mW diode 476 k
Text: N AMER PHILIPS/DISCRETE a?D bbSBT31 00CH733 0 D r D EV ELO PM EN T DATA This data shget contains advance information and specifications are subject to change w ithout notice. T-41-07 502CQF BURIED HETEROJUNCTION InGaAsP LASER DIODE WITH FIBRE PIGTAIL The 502C Q F is an InGaAsP buried heterojunction semiconductor laser diode. The device is designed
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502CQF
OT-184
1300 laser diode rise time
Indium Gallium Arsenide Phosphide lasers
indium gallium arsenide phosphide
OC45K
laser 477
Semiconductor Laser International
data by 476 diode
1300 nm Laser 40 mW
diode 476 k
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T3D 54 DIODE
Abstract: Diode T3D 56 Diode T3D 24 T3D 75 diode T3D 77 diode T3D 01 DIODE T3D 55 diode Diode T3D 54 T3D 20 diode T3D+54+DIODE
Text: SSE N AMER PHILIPS / D I S CR E T E bbSBT31 002Cm50 T J> PowerMOS transistor BUK453-100A BUK453-1OOB T -21-11 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies
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bbSBT31
002Cm50
BUK453-100A
BUK453-1OOB
BUK453
-100A
-100B
T3D 54 DIODE
Diode T3D 56
Diode T3D 24
T3D 75 diode
T3D 77 diode
T3D 01 DIODE
T3D 55 diode
Diode T3D 54
T3D 20 diode
T3D+54+DIODE
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s3331
Abstract: No abstract text available
Text: N AMFR PHILIPS/DISCRETE b'lE P bbSBT31 0026333 331 « A P X Philips Semiconductors Product specification Silicon diffused power transistor BU1508DX GENERAL DESCRIPTION Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
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bbSBT31
BU1508DX
bb53T31
S3331
DD2fl33fl
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LJE42002T
Abstract: npn 41A
Text: N AMER PH ILIPS/ DIS CRETE OLE D • bbSBT31 0014131 7 ■ 11 M AINTENANCE TYPE LJE42002T _ J v MICROWAVE LINEAR POWER TRANSISTOR NPN silicon transistor intended for use in military and professional applications. It operates in c.w.
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fafa5m31
DGmi31
LJE42002T
7Z8S744
LJE42002T
npn 41A
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Untitled
Abstract: No abstract text available
Text: N AMER P H I L I P S / D I S C R E T E bbS3T31 0011173 a • ObE D BTW 63 SERES y v ^ r - a s - - 17 F i FAST TURN-OFF THYRISTORS Glass-passivated, asymmetrical, fast turn-off, forward blocking thyristors ASC R in TO-48 envelopes, suitable for operation in fast power inverters. For reverse-blocking operation use with a series diode,
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bbS3T31
1000R
bbSBT31
BTW63
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Untitled
Abstract: No abstract text available
Text: _ l l N AMER PHILIPS/DISCRETE bbS3T31 QQ1S2D7 1 ObE D RXB12350Y IM J PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor fo r use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended fo r IFF applications.
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bbS3T31
RXB12350Y
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Untitled
Abstract: No abstract text available
Text: b?E ]> bb53T31 0 Q 2 3 C12C1 647 « A P X Philips Semiconductors Data sheet status P ro d u c t s p e c ific a tio n date of issue July 1993 _ FEATURES • Direct interface to C-MOS, TTL, etc. • High-speed switching • No secondary breakdown.
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bb53T31
BSS192
A/-10
bb53t
MC073B
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V103 transistor
Abstract: BUZ41A transistor BUZ41 T0220AB V103
Text: PowerMOS transistor_ N AMER P H I L I P S / D I S C R E T E OLE D BUZ41A • bbSB'm _ 001M 4^3 1 ■ T " 2 * ì - |/ May 1987 GENERAL DESCRIPTION N-channel enchancement mode fleld-effect power transistor in a plastic envelope. The device is intended for use in
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BUZ41A
bbS3131
T0220AB;
V103 transistor
BUZ41A
transistor
BUZ41
T0220AB
V103
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CNX71A
Abstract: CNX72A UBB033
Text: P rodu ct specification P h ilip s S e m ico n d u cto rs High-voltage optocouplers CNX71A/CNX72A FE A T U R E S • High current transfer ratio and a low saturation voltage, making the devices suitable for use with T TL integrated circuits • High degree of A C and D C
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CNX71A/CNX72A
CNX71A
CNX72A
OT229B
CNX72A,
CNX71A.
PINNING-CNX71A
E90700
7Z24M7
UBB033
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BB5Z
Abstract: BSP30 BSP31 BSP32 BSP33 VC80
Text: • bbS3T31 a0254b0 57b HIAPX BSP30 TO 33 b?E J> N AMER PHILIPS/DISCRETE SILICON PLANAR EPITAXIAL TRANSISTORS PNP transistors in m iniature plastic envelopes intended fo r application in thick and th in-film circuits. T h e y are intended fo r use in telephony and general industrial applications.
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bbS3T31
a0254b0
BSP30
BSP31
BSP32
BSP33
0D254b3
BB5Z
BSP33
VC80
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Untitled
Abstract: No abstract text available
Text: • BDT32F; 32AF BDT32BF; 32CF^ BDT32DF bbSBTBl 0 0 M 7 0 S 1 ■ N AMER PHILIPS/DISCRETE 2SE D J V T-zz-n SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistors each, in a SOT186 envelope with an electrically insulated mounting base. They are intended for use in audio amplifier output stages, general purpose amplifiers, and high-speed
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BDT32F;
BDT32BF;
BDT32DF
OT186
BDT31F,
BDT31AF,
BDT31BF,
BDT31CF,
BDT31DF,
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Untitled
Abstract: No abstract text available
Text: b b S B ' m DD14TS7 3 D E V E L O P M E N T DATA This data sheet contains advance Information and specifications are subject to change without notice. LTE21009R LTE21015R 11' N ANER PHILIPS/DISCRETE ObE D M ICROW AVE LINEAR POW ER TRA N SISTO R N-P-N silicon transistor for use in common-emitter class-A linear power amplifiers up to 4,2 GHz.
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DD14TS7
LTE21009R
LTE21015R
FO-41B)
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FX1115
Abstract: No abstract text available
Text: N AUER PHILIPS/DISCRETE 86D 0 1 7 7 8 otE » • D 3T T - ? Jl oomoib a 0 "7 BLX68 U.H.F./V.H.F. POWER TRANSISTOR N-P-N silicon transistor tor use in class-B and C operated mobile, industrial and military transmitters with a supply voltage of 13,8 V. t has a capstan envelope with a moulded cap. All leads are isolated from the stud.
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BLX68
OT-48/3.
7Z61766
7Z61769
bb53131
FX1115
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Untitled
Abstract: No abstract text available
Text: AMER P H IL IP S /D IS C R E T E OLE D ^53=131 001SD0S a DhVtLUPM fcNI U A IA LV2931E50S This data sheet contains advance information and specifications are subject to change without notice. y v r 3 3 - 0 ? - MICROWAVE LINEAR POWER TRANSISTOR NPN silicon planar microwave power transistor intended for use in common-emitter class-A
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001SD0S
LV2931E50S
bbSBT31
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c3v9
Abstract: CECC50 005 BZV85 philips 683 series c6v2 C7V5 BZ/88/C4V7
Text: N AMER P H IL IP S /D IS C R E T E SSE D • ^53^31 G G IL T SI Â Q ■ BZV85 SE R IE S T - / M VOLTAGE REGULATOR DIO DES 3 ^ Silicon planar voltage regulator diodes in hermetically sealed DO-41 glass envelopes intended for stabilization purposes. The series covers the normalized E24 ± 5% range of nominal working voltages
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bb53131
BZV85
DO-41
7Z82193
7Z82194
c3v9
CECC50 005
philips 683 series
c6v2
C7V5
BZ/88/C4V7
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BGY94C
Abstract: BGY94A BGY94B A08 RF Amplifier
Text: N AUER PHILIPS/DISCRETE DEVELOPM ENT DATA1• GbE D ■ btiS3T31 Ü013514 ■ This data sheet contain! advance inform ation and ipecHrcatlon* are subject to change w ithout notice, BGV94A BGY94B BGY94C _ 86D 01056 D T -7*1'à<ì-C/ V . -N O R T H / A M P E R E X / D I S CRETE DbE D
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LS3T31
QG13514
BGY94A
BGY94B
BGY94C
BGY94A,
BGY94C
UT053"
0G132U
A08 RF Amplifier
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE b'lE D b b S B ^ l □□S7flDT 737 I APX BFY55 V. SILICON PLANAR EPITAXIAL TRANSISTOR N-P-N transistor in TO-39 metal case with the collector connected to the case. It is primarily intended for use in high frequency and very high frequency oscillators and amplifiers as well as fo r output stages
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BFY55
bbS3R31
0027fllfl
00276E0
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS/DISCRETE ObE D • 1 bbS3T31 0014^13 5 ■ LAE6000Q 7 V r-3 |-l5 T LOW-NOISE MICROWAVE TRANSISTOR N-P-N transistor for common-emitter class-A low-noise amplifiers up to 4 GHz. Self-aligned process entirely ion implanted and gold sandwich metallization ensure an optimum temperature profile,
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bbS3T31
LAE6000Q
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BDT42
Abstract: BDT41 BDT42B IEC134 TIP42 TIP42 equivalent T3321
Text: N AMER PHILIPS/DISCRETE 2SE D • bbS3T31 0 0 n 7 2 T ■ BDT42;A BDT42B;C T-33-ÄJ SILICON EPITAXIAL BASE POWER TRANSISTORS P-N-P silicon transistors in a plastic envelope intended for use in general output stages of amplifier circuits and switching applications. The TIP42 series is an equivalent type, P-N-P complements are
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BDT42
BDT42B
T-33-Ã
TIP42
BDT41
O-220AB
7Z82922
00n735
7Z82918
IEC134
TIP42 equivalent
T3321
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RXB12350Y
Abstract: ATC capacitor
Text: _LL N AMER P H I L I P S / D I S C R E T E ObE » • 1^53^31 0015SD7 J *] ■ RXB12350Y T-'ìl-!S' PULSED MICROWAVE POWER TRANSISTOR N-P-N silicon power transistor for use in a common-base, class-C narrowband amplifier in avionics applications. It operates in pulsed conditions only and is recommended for IFF applications.
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0015SD7
RXB12350Y
r-33-/S"
ATC capacitor
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k 246 transistor fet
Abstract: 4428A BUK637-600A BUK637-600B BUK637-600C SE120 SE-120
Text: N AMER PHILIPS/DISCRETE SSE D • ^53=131 OGEabflS 4 PowerMOS transistor Fast Recovery Diode FET BUK637-600A * BUK637-600B BUK637-600C GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode field-effect power transistor in a plastic envelope.
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BUK637-600A
BUK637-600B
BUK637-600C
BUK637
-600A
-600B
-600C
k 246 transistor fet
4428A
BUK637-600A
BUK637-600B
BUK637-600C
SE120
SE-120
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