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    TRANSISTOR Search Results

    TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    TRANSISTOR Price and Stock

    Gearbox Labs PART-TRANSISTOR-2N2222

    TRANSISTOR 2N2222
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    DigiKey PART-TRANSISTOR-2N2222 Bulk
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    Nexperia 2N7002NXAKR

    MOSFETs 2N7002NXAK/SOT23/TO-236AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TTI 2N7002NXAKR Reel 7,650,000 3,000
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    Nexperia PMBT2907A,215

    Bipolar Transistors - BJT SOT23 60V .6A PNP SWITCHING
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    TTI PMBT2907A,215 Reel 7,158,000 3,000
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    Nexperia 2N7002,215

    MOSFETs 2N7002/SOT23/TO-236AB
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    TTI 2N7002,215 Reel 4,866,000 3,000
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    Nexperia MMBT3906,215

    Bipolar Transistors - BJT SOT23 40V .2A PNP BJT
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    TTI MMBT3906,215 Reel 4,026,000 3,000
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    Find more TRANSISTOR price and stock on Findchips.com

    TRANSISTOR Datasheets (110)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    2N1506 Transistor International Transistor Selection Guide Scan PDF
    2N158 Transistor & Electronic Germanium Power Transistors Scan PDF
    2N2834 Transistor & Electronic PNP High Power Transistors Scan PDF
    2N2876 Transistor International Transistor Selection Guide Scan PDF
    2N3137 Transistor International Transistor Selection Guide Scan PDF
    2N3375 Transistor International Transistor Selection Guide Scan PDF
    2N3553 Transistor International Transistor Selection Guide Scan PDF
    2N3632 Transistor International Transistor Selection Guide Scan PDF
    2N3733 Transistor International Transistor Selection Guide Scan PDF
    2N3866 Transistor International Transistor Selection Guide Scan PDF
    2N3924 Transistor International Transistor Selection Guide Scan PDF
    2N3926 Transistor International Transistor Selection Guide Scan PDF
    2N3927 Transistor International Transistor Selection Guide Scan PDF
    2N3948 Transistor International Transistor Selection Guide Scan PDF
    2N4040 Transistor International Transistor Selection Guide Scan PDF
    2N4041 Transistor International Transistor Selection Guide Scan PDF
    2N4073 Transistor International Transistor Selection Guide Scan PDF
    2N4127 Transistor International Transistor Selection Guide Scan PDF
    2N4128 Transistor International Transistor Selection Guide Scan PDF
    2N4427 Transistor International Transistor Selection Guide Scan PDF

    TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: GaAs IRED S PHOTO-TRANSISTOR TLP126 T IP I2 6 P R O G R A M M A B L E C O N TR O LLERS A C /D C -IN P U T M O D U L E T E L E C O M M U N IC A T IO N The TOSHIBA MINI FLAT COUPLER TLP126 is a small outline coupler, suitable for surface mount assembly.


    OCR Scan     		PDF TLP126 TLP126 3750Vrms UL1577, E67349

    MP4007

    Abstract: No abstract text available
    Text: SILICON NPN EPITAXIAL TYPE POWER TRANSISTOR 4 IN 1 MP4007 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2 ± 0.2 LOAD SWITCHING. . Small Package by Full Molding. (SIP 10 Pin) . High Collector Power Dissipation.


    OCR Scan     		PDF MP4007 Ta-25 MP4007

    YTF822

    Abstract: No abstract text available
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE ff-MOSn YTF822 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS. CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR 10.3 MAX. 03.6±O.2 DRIVE APPLICATIONS. . Low Drain-Source ON Resistance


    OCR Scan     		PDF YTF822 20kXi) YTF822

    2N718

    Abstract: SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613
    Text: TYPES 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, ZUmO, 2N150J. 2N1613. 2N1711 N-P-N SILICON TRANSISTORS B U L L E T IN N O . D L -S 6 9 3 4 7 1 , M A Y 1 9 6 3 - R E V I S E D A U G U S T 1 9 6 9 Highly Reliable, Versatile Devices Designed for


    OCR Scan     		PDF 2N696, 2N697. 2N717. 2N718. 2N718A, 2N730, 2N731, 2N956, 2N150J. 2N1613. 2N718 SA37T 2N696 2N717 2N1711 2n697 2N1613 2N956 2N731 2NI613

    2SK578

    Abstract: 2SK57
    Text: FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE 7T-MOS 2SK578 INDUSTRIAL APPLICATIONS Unit in mm HIGH SPEED, HIGH POWER SWITCHING APPLICATIONS. MOTOR DRIVE, DC-DC CONVERTER AND SWITCHING REGURATOR APPLICATIONS. #3,3±Q.2 FEATURES: . Low Drain-Source ON Resistance


    OCR Scan     		PDF 2SK578 0-22n 0-a25 2SK578 2SK57

    transistor 2SK1603

    Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
    Text: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all


    OCR Scan     		PDF OT-89, T0-220 2SK1488 2SK1865SM 2SK1531 2SK1745 2SK2057 2SK1544 O-220AB 2SK1723 transistor 2SK1603 2SK1603 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358

    FN521

    Abstract: FN 521 UFN522 UFN523 UFN520
    Text: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.


    OCR Scan     		PDF UFN520 UFN522 UFN523 UFN520 UFN521 UFN522 FN521 FN 521 UFN523

    diode SS 3

    Abstract: No abstract text available
    Text: TOSHIBA 2SK2699 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt-MOSV 2SK2699 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS IN D U S T R IA L A P P L IC A T IO N S U n it in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS


    OCR Scan     		PDF 2SK2699 diode SS 3

    TRANSISTOR Marking XB PNP

    Abstract: YTS3906
    Text: TOSHIBA TRANSISTOR YTS3906 SILICON PNP EPITAXIAL TYPE PCT PROCESS FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. FEATURES: . Low Leakage Current : IcEV“” 50nA(Max.), IuEV“ 50nA(Max.) 0 VCE— 30V, VBE-3V . Excellent DC Current Gain Linearity


    OCR Scan     		PDF YTS3906 -50mA, YTS3904 300ne TRANSISTOR Marking XB PNP YTS3906

    YTFP450

    Abstract: SC651
    Text: FIELD EFFECT TRANSISTOR YTFP450 SILICON N CHANNEL MOS TYPE tt-MOSH HIGH SPEED,HIGH CURRENT SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS CHOPPER REGULATOR,DC-DC CONVERTER AND HOTOR U nit in mm ORIVE APPLICATIONS, 159M A X . FEATURES: 0Z2±aZ A m • Low Drain-Source ON Resistance :


    OCR Scan     		PDF YTFP450 VDS-10V, 00A/ps YTFP450 SC651

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SD2079 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON 2SD2079 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 10 ±0.3 High DC Current Gain : hpE (i) = 2000 (Min.) Low Saturation Voltage : V q e (sat) ( 1 ) = 1-5V (Max.)


    OCR Scan     		PDF 2SD2079 2SB1381. MAX30

    UFNF430

    Abstract: diode ed 2437 UFNF432
    Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.


    OCR Scan     		PDF UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432

    ND06

    Abstract: No abstract text available
    Text: TD62801P BIPOLAR DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TD62G01P 8 BIT SHIFT REGISTER/LATCH/DRIVER THERMAL HEAD DRIVER Features • 8 Bit Serial-In Parallel-Out Shift Register/Latch/ 8 Bit Driver Transistors. • Output Current . 70 mA Max.


    OCR Scan     		PDF TD62801P TD62G01P TD62801P ND06

    tc258c

    Abstract: No abstract text available
    Text: TOSHIBA O I S C R E T E / O P T O } 9097250 TOSHIBA VI < D ISC RETE/O PTO TOSHIBA SEMICONDUCTOR T o s h ib a DE I TEHTEiSD GGlbflia 99D 16812 D T -B 9 -1 3 FIELD EFFECT TRANSISTOR Y T F *4 4 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA TT-MOS I ) HIGH SPEED, HI G H C U RRENT SWITCHING APPLICATIONS.


    OCR Scan     		PDF 250liA 250uA 00A/ys tc258c

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA 2SC3265 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3265 Unit in mm LOW FREQUENCY POWER AMPLIFER APPLICATIONS POWER SWITCHING APPLICATIONS h0.5 High DC Current Gain : hpg (i) = 100~320 Low Saturation Voltage : VcE(sat) = 0.4 V (Max.)


    OCR Scan     		PDF 2SC3265 2SA1298 O-236MOD SC-59CEO

    1117F

    Abstract: No abstract text available
    Text: T O S H IB A RN1112F,RN1113F TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS R •m N ■ 1117F 'm m m m m g R N 1 1 1 3 F■ m m m 'm m m m m tr SWITCHING, INVERTER CIRCUIT, INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATIONS. • • • • With Built-in Bias Resistors


    OCR Scan     		PDF RN1112F RN1113F 1117F RN2112F, RN2113F 1117F

    MG50G2CL3

    Abstract: Mg50G2cl mg50g2
    Text: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)


    OCR Scan     		PDF MG50G2CL3 MG50G2CL3 Mg50G2cl mg50g2

    TLP338

    Abstract: No abstract text available
    Text: TLP337,338 GaAs IRED a PHOTO-TRANSISTOR TENTATIVE DATA TELECOMMUNICATION. OFFICE MACHINE. TELEPHONE USE EQUIPMENT. The TOSHIBA TLP337 and TLP338 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a six lead plastic DIP package.


    OCR Scan     		PDF TLP337 TLP338 150mA. 150mA 5000Vrms E67349 TLP338

    BU326

    Abstract: BU326-BU326A 331Z BU326A st bux
    Text: TEXAS INSTR -COPTO} bâ DE IfliblTEt, 003t,t,acl S Ô 9 t 7 26 TEXAS INSTR~<OPTO> 62C 3 6 6 2 9 D BU326, BU326A N-P-N SILICON POWER TRANSISTORS OCTO BER 19 82 - R E V ISE D OC TO BER 1 9 84 60 W at 2 5 ° C Case Temperature 6 A Continuous Collector Current


    OCR Scan     		PDF BU326, BU326A BU326 BU326-BU326A 331Z st bux

    2SK945

    Abstract: 2SK9
    Text: TOSHIBA 2SK945 Field Effect Transistor Silicon N Channel MOS Type rc-MOS II High Speed, High Current Switching, DC-DC Converter, Chopper Regulator and Motor Drive Applications Features • L o w D ra in -S o u rc e O N R esistan ce • r d s (o n ) = (T y p -)


    OCR Scan     		PDF 2SK945 2SK945 2SK9

    str f 6454

    Abstract: str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453 2N6454
    Text: TYPES 2N64B1 THRU 2N6454 N-CHANNEL SILICON JUNCTION FIELD-EFFECT TRANSISTORS B U L L E T IN N O . D L S 7 3 1 2 0 0 8 . JU N E 1973 DESIGNED FOR LOW-NOISE PREAMPLIFIER APPLICATIONS ESPECIALLY HYDROPHONES, IR SENSORS, AND PARTICLE DETECTORS • Low V„ . . . 5 nV/A/Hz Max at 10 Hz 2N6451, 2N6453


    OCR Scan     		PDF 2N64B1 2N6454 2N6451, 2N6453) 2N6453, 2N6454) str f 6454 str 6454 ic str 6454 str f -6454 2N6451 2n6452 6453 NS2N 2N6453

    2N3051

    Abstract: 2N3050 2N2412 2n3049
    Text: TYPES 2N3049, 2N3050, 2N3051 DUAL P-N-P SILICON TRANSISTORS B U L L E T I N N O . D L -S 6 7 4 2 3 0 , A U G U S T 1 9 6 3 - R E V I S E D A P H IL 1 96 7 DESIGNED FOR DIFFERENTIAL AMPLIFIERS, LOW-NOISE AMPLIFIERS, AND LOW-LEVEL SWITCHING • Each Triode Electrically Similar to 2N2411 and 2N2412 Transistors


    OCR Scan     		PDF 2N3049, 2N3050, 2N3051 2N2411 2N2412 2N3050 2n3049

    Untitled

    Abstract: No abstract text available
    Text: HN3C17FU TOSHIBA TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE HN3C17FU Unit in mm V H F -U H F LOW NOISE AMPLIFIER APPLICATIONS 2-1 + 0.1 CHIP : fT = 16GHz series • Low Noise Figure : N F=1.3dB (f=2GHz) • High Gain : |S2l e|2 = 9-0dB (f=2GHz)


    OCR Scan     		PDF HN3C17FU 16GHz

    Untitled

    Abstract: No abstract text available
    Text: TO SHIBA 2SK2917 TO SHIBA FIELD EFFECT TRANSISTOR SILICON N CHAN N EL MOS TYPE tt-M O SV 2SK2917 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS Low Drain-Sorce ON Resistance


    OCR Scan     		PDF 2SK2917