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    22FDH Search Results

    22FDH Result Highlights (1)

    Part ECAD Model Manufacturer Description Download Buy
    P89LPC922FDH Rochester Electronics LLC P89LPC922 - 8-bit microcontrollers, 80C51 core, low-power Flash with 256-byte data RAM Visit Rochester Electronics LLC Buy
    SF Impression Pixel

    22FDH Price and Stock

    Samtec Inc SSM-122-F-DH

    CONN RCPT 44POS 0.1 GOLD SMD R/A
    Free Sample
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    DigiKey SSM-122-F-DH Tube 10
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    Avnet Americas SSM-122-F-DH Tube 1
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    Mouser Electronics SSM-122-F-DH
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    Master Electronics SSM-122-F-DH
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    Rochester Electronics LLC P89LPC922FDH

    IC MCU 8BIT
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    Fresh Digit P89LPC922FDH

    IC MCU 8BIT 8KB FLASH 20TSSOP
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    DigiKey P89LPC922FDH Bulk 10
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    NXP Semiconductors P89LPC922FDH,512

    IC MCU 8BIT 8KB FLASH 20TSSOP
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    Newark P89LPC922FDH,512 Bulk 1,875
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    NXP Semiconductors P89LPC922FDH,529

    IC MCU 8BIT 8KB FLASH 20TSSOP
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    DigiKey P89LPC922FDH,529 Tube 750
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    Find more 22FDH price and stock on Findchips.com

    22FDH Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BA379

    Abstract: BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324
    Text: K8A5615ET B A NOR FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA379 BA377 BA339 BA438 BA429 BA416 ba-302 BA512 BA308 ba324

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FT 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V supply Flash memory Feature summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FT

    Q002

    Abstract: NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21
    Text: M29W064FT M29W064FB 64 Mbit 8 Mbit x 8 or 4 Mbit x 16, page, boot block 3 V supply Flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


    Original     		PDF M29W064FT M29W064FB Q002 NUMONYX A0-A21 AEC-Q100 M29W064F M29W064FB M29W064FT A2A21

    MX26L3220

    Abstract: Q0-Q15
    Text: ADVANCED INFORMATION MX26L3220 32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 2,097,152 x 16 byte structure • Single Power Supply Operation • • • • Status Reply - 2.7 to 3.6 volt for read, erase, and program operations Low Vcc write inhibit is equal to or less than 2.5V


    Original     		PDF MX26L3220 32M-BIT 90/120ns 70s/chip 90s/chip theP11 SEP/26/2001 JUL/31/2001 NOV/27/2001 JAN/29/2002 MX26L3220 Q0-Q15

    A0-A21

    Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB TFBGA48 A0-A21 JESD97 M29W640F M29W640FB M29W640FT TFBGA48

    BA339

    Abstract: BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA339 BA516 BA501 BA379 BA481 ba473 BA450 BA508 ba204

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory PRELIMINARY DATA Features Summary • SUPPLY VOLTAGE – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ ASYNCHRONOUS RANDOM/PAGE READ


    Original     		PDF M29W640FT M29W640FB TSOP48

    Numonyx

    Abstract: JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB TFBGA48 Numonyx JESD97 M29W640F M29W640FB M29W640FT TFBGA48 A0-A21

    ba508

    Abstract: BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473
    Text: Preliminary Preliminary MCP MEMORY K5L5628JT B M Document Title Multi-Chip Package MEMORY 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash / 128M Bit(8M x16) Synchronous Burst UtRAM Revision History Revision No. History Draft Date Remark Preliminary


    Original     		PDF K5L5628JT 115-Ball 80x13 ba508 BA311 BA340 BA516 BA512 BA516 diode BA339 BA379 BA295 ba473

    Untitled

    Abstract: No abstract text available
    Text: 64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features • UNLOCK BYPASS PROGRAM command – Faster production/batch programming • VPP/WP# pin for fast program and write protect • Temporary block unprotection mode


    Original     		PDF M29W640FT, M29W640FB 64-bit 0020h M29W640FT: 22EDh M29W640FB: 22FDh 48-pin 48-ball

    Untitled

    Abstract: No abstract text available
    Text: Preliminary FLASH MEMORY K8A5615ET B A Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns---

    Untitled

    Abstract: No abstract text available
    Text: M29W064FT M29W064FB 64-Mbit 8 Mbit x8 or 4 Mbit x16, page, boot block 3 V supply flash memory Preliminary Data Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) „ Asynchronous random/page read


    Original     		PDF M29W064FT M29W064FB 64-Mbit

    ba508

    Abstract: BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- ba508 BA516 diode BA512 BA507 ba358 BA339 BA505 BA459 BA516 BA329

    M29W640FB

    Abstract: M29W640 A0-A21 JESD97 M29W640F M29W640FT TFBGA48
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary Figure 1. Packages Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) Asynchronous Random/Page Read


    Original     		PDF M29W640FT M29W640FB TSOP48 M29W640FB M29W640 A0-A21 JESD97 M29W640F M29W640FT TFBGA48

    Untitled

    Abstract: No abstract text available
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Features summary • Supply Voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB TSOP48

    BA425

    Abstract: BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418
    Text: K8A5615ET B A FLASH MEMORY Document Title 256M Bit (16M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Advanced March 15, 2004 Advance 0.1 Revision - Change the speed code 7B : 90ns @54MHz -> 7B : 88.5ns @54MHz


    Original     		PDF K8A5615ET 54MHz 22ECH 22FCH 22EDH 22FDH K8A56156ET 70ns--- BA425 BA512 BA507 BA379 BA324 BA377 BA497 BA339 BA413 ba418

    Untitled

    Abstract: No abstract text available
    Text: M29W064FT M29W064FB 64-Mbit 8 Mbit x8 or 4 Mbit x16, page, boot block 3 V supply flash memory Preliminary Data Features • Supply voltage – VCC = 2.7 V to 3.6 V for program, erase, read – VPP =12 V for fast program (optional) ■ Asynchronous random/page read


    Original     		PDF M29W064FT M29W064FB 64-Mbit

    M29W640FT

    Abstract: NUMONYX m29w640ft flash memory chip A0-A21 JESD97 M29W640F M29W640FB TFBGA48 M29W640 m29w640fb70
    Text: M29W640FT M29W640FB 64 Mbit 8Mb x8 or 4Mb x16, Page, Boot Block 3V Supply Flash Memory Feature summary • Supply voltage – VCC = 2.7V to 3.6V for Program, Erase, Read – VPP =12 V for Fast Program (optional) ■ Asynchronous Random/Page Read – Page Width: 4 Words


    Original     		PDF M29W640FT M29W640FB TFBGA48 M29W640FT NUMONYX m29w640ft flash memory chip A0-A21 JESD97 M29W640F M29W640FB TFBGA48 M29W640 m29w640fb70

    MX26L3220

    Abstract: Q0-Q15
    Text: ADVANCED INFORMATION MX26L3220 32M-BIT [2M x 16] CMOS MULTIPLE-TIME-PROGRAMMABLE EPROM FEATURES • 2,097,152 x 16 byte structure • Single Power Supply Operation • • • - 2.7 to 3.6 volt for read, erase, and program operations Low Vcc write inhibit is equal to or less than 2.5V


    Original     		PDF MX26L3220 32M-BIT 90/120ns 70s/chip 90s/chip SEP/26/2001 JUL/31/2001 NOV/27/2001 MX26L3220 Q0-Q15

    2216H

    Abstract: XZ MC11 LQFP100-P-1414-0 TMP95CS54 TMP95CS54F
    Text: TOSHIBA UNDER DEVELOPMENT TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. Outline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CS54 16-Bit TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 2216H XZ MC11 LQFP100-P-1414-0 TMP95CS54F

    PL 2305H

    Abstract: MC1110
    Text: TO SH IB A TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package. Listed below are the features.


    OCR Scan     		PDF 16-Bit TMP95CU54A TMP95CU54AF TMP95CU54A 100-pin 900/H TLCS-90/900 PL 2305H MC1110

    FJ 3528 clock

    Abstract: GAM-17
    Text: TO SH IB A TMP95CS54 CMOS 16-Bit Microcontrollers TMP95CS54F 1. O utline and Features TMP95CS54 is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CS54 comes in a 100-pin flat package. Listed below are the features.


    OCR Scan     		PDF 16-Bit TMP95CS54 TMP95CS54F TMP95CS54 100-pin 900/H TLCS-90/900 FJ 3528 clock GAM-17

    TMP95CU54A

    Abstract: TMP95CU54AF 000CA a15 d73 hi ng bosch CF150 A1676 2314-H
    Text: TO SH IB A Under Development TMP95CU54A CMOS 16-Bit Microcontrollers TMP95CU54AF 1. Outline and Features TMP95CU54A is a high-speed 16-bit microcontroller designed for the control of various mid- to largescale equipment. TMP95CU54A comes in a 100-pin flat package.


    OCR Scan     		PDF TMP95CU54A 16-Bit TMP95CU54AF TMP95CU54A 100-pin 900/H TLCS-90/900 TMP95CU54AF 000CA a15 d73 hi ng bosch CF150 A1676 2314-H