Untitled
Abstract: No abstract text available
Text: APT30DF120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application • • • • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features • • • • • • • •
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APT30DF120HJ
OT-227)
Absolute84)
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Untitled
Abstract: No abstract text available
Text: APT30DF120HJ ISOTOP Fast Diode Full Bridge Power Module VRRM = 1200V IC = 30A @ Tc = 80°C Application • Switch mode power supplies rectifier Induction heating Welding equipment High speed rectifiers Features + ~
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APT30DF120HJ
OT-227)
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APT12031JLL
Abstract: mosfet 600V 30A MOSFET 1200v 30a APT30DF120
Text: APT12031JLL 1200V 30A 0.310Ω POWER MOS 7 R MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12031JLL
OT-227
APT12031JLL
mosfet 600V 30A
MOSFET 1200v 30a
APT30DF120
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APT12031JFLL
Abstract: APT12031JLL
Text: APT12031JFLL 1200V 30A 0.33 Ω POWER MOS 7 R FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT12031JFLL
OT-227
APT12031JFLL
APT12031JLL
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228F
Abstract: APT35GP120B T0-247
Text: APT35GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B
O-247
228F
APT35GP120B
T0-247
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APT12040JFLL
Abstract: APT30DF120
Text: APT12040JFLL 1200V 24A 0.400Ω POWER MOS 7 R Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12040JFLL
OT-227
APT12040JFLL
APT30DF120
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88 diode
Abstract: 22a ic APT11044JFLL
Text: APT11044JFLL 1100V 22A 0.440Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT11044JFLL
OT-227
88 diode
22a ic
APT11044JFLL
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Untitled
Abstract: No abstract text available
Text: APT12031JFLL 1200V 30A 0.33 Ω R POWER MOS 7 FREDFET S S 27 Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT12031JFLL
OT-227
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Untitled
Abstract: No abstract text available
Text: APT10026L2LL 1000V 38A 0.260Ω R POWER MOS 7 MOSFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT10026L2LL
O-264
O-264
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SP6-P
Abstract: N-channel MOSFET 800v 50a to-247 SMPS 1000w IGBT REFERENCE DESIGN DRF1400 45A, 1200v n-channel npt series igbt APTES80DA120C3G APT35DL120HJ semiconductors cross reference IGBT triple modules 100A 2000W mosfet power inverter
Text: Power Matters POWER PORTFOLIO 2011-2012 Power Semiconductors Power Modules RF Power MOSFETs Power Products Group About Microsemi Microsemi Power Products Group was created in 2006 with the acquisition of Advanced Power Technology, Inc., a company at the forefront of power semiconductor technology since its founding in 1984.
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10F-A,
SP6-P
N-channel MOSFET 800v 50a to-247
SMPS 1000w IGBT REFERENCE DESIGN
DRF1400
45A, 1200v n-channel npt series igbt
APTES80DA120C3G
APT35DL120HJ
semiconductors cross reference
IGBT triple modules 100A
2000W mosfet power inverter
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APT12040L2FLL
Abstract: No abstract text available
Text: APT12040L2FLL 1200V 30A 0.400Ω POWER MOS 7 R FREDFET TO-264 Max Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT12040L2FLL
O-264
O-264
APT12040L2FLL
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IC 7431 datasheet
Abstract: 185F APT45GP120B2DF2 800V16A
Text: APT45GP120B2DF2 APT45GP120B2DF2 TYPICAL PERFORMANCE CURVES 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B2DF2
IC 7431 datasheet
185F
APT45GP120B2DF2
800V16A
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APT12040
Abstract: No abstract text available
Text: APT12040JLL 1200V 24A 0.400Ω POWER MOS 7 R Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7 by significantly lowering RDS ON ® and Qg. Power MOS 7 combines lower conduction and switching losses
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APT12040JLL
APT12040
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Untitled
Abstract: No abstract text available
Text: APT12057JFLL 1200V 19A 0.570Ω R POWER MOS 7 FREDFET S S Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT12057JFLL
OT-227
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IC 7407
Abstract: IC 7407 datasheet DIODE 59 APT35GP120B2DF2 228F 70A 1200V IGBTS
Text: APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2DF2
IC 7407
IC 7407 datasheet
DIODE 59
APT35GP120B2DF2
228F
70A 1200V IGBTS
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IC AND GATE 7408
Abstract: IC 7408 7408 7408 ic datasheet ic 7408 datasheet 7408 datasheet 7408 ic data sheet IC 7408 APT30DF120 7408 and
Text: APT35GP120JDF2 1200V E E POWER MOS 7 IGBT G The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120JDF2
IC AND GATE 7408
IC 7408
7408
7408 ic datasheet
ic 7408 datasheet
7408 datasheet
7408 ic
data sheet IC 7408
APT30DF120
7408 and
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APT12057B2FLL
Abstract: APT12057LFLL
Text: APT12057B2FLL APT12057LFLL 1200V 22A 0.570Ω POWER MOS 7 R FREDFET B2FLL Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT12057B2FLL
APT12057LFLL
O-264
O-264
O-247
APT12057B2FLL
APT12057LFLL
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APT12031
Abstract: No abstract text available
Text: APT12031JLL 1200V 30A 0.310Ω R POWER MOS 7 MOSFET Symbol VDSS ID SO "UL Recognized" ISOTOP ® D • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12031JLL
OT-227
APT12031
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Untitled
Abstract: No abstract text available
Text: APT12040JFLL 1200V 24A 0.400Ω R POWER MOS 7 Symbol VDSS ID SO "UL Recognized" ISOTOP ® • Increased Power Dissipation • Easier To Drive • Popular SOT-227 Package • FAST RECOVERY BODY DIODE MAXIMUM RATINGS 27 2 T- D G Power MOS 7 is a new generation of low loss, high voltage, N-Channel
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APT12040JFLL
OT-227
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APT45GP120B
Abstract: T0-247
Text: APT45GP120B 1200V POWER MOS 7 IGBT TO-247 The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B
O-247
APT45GP120B
T0-247
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diode 640
Abstract: 106F APT11058B2FLL APT11058LFLL APT30DF120
Text: APT11058B2FLL APT11058LFLL 1100V 20A 0.580Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON
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APT11058B2FLL
APT11058LFLL
O-264
O-264
O-247
diode 640
106F
APT11058B2FLL
APT11058LFLL
APT30DF120
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ic 7407
Abstract: 7407 APT35GP120B2DF2 IC 7407 datasheet 228F
Text: APT35GP120B2DF2 TYPICAL PERFORMANCE CURVES APT35GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT35GP120B2DF2
ic 7407
7407
APT35GP120B2DF2
IC 7407 datasheet
228F
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Untitled
Abstract: No abstract text available
Text: APT45GP120B2DF2 1200V POWER MOS 7 IGBT T-MaxTM The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120B2DF2
APT45GP120B2DF2age
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Untitled
Abstract: No abstract text available
Text: APT45GP120J 1200V E E POWER MOS 7 IGBT The POWER MOS 7® IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology this IGBT is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency
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APT45GP120J
APT45GP1
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