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    APT11058B2FLL Search Results

    APT11058B2FLL Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    APT11058B2FLL Advanced Power Technology POWER MOS 7 R FREDFET Original PDF
    APT11058B2FLL Unknown Power MOS 7, 1100V 20A, MOS-FET N-Channel enhanced Original PDF

    APT11058B2FLL Datasheets Context Search

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    diode 640

    Abstract: 106F APT11058B2FLL APT11058LFLL APT30DF120
    Text: APT11058B2FLL APT11058LFLL 1100V 20A 0.580Ω POWER MOS 7 R FREDFET Power MOS 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching ® losses are addressed with Power MOS 7 by significantly lowering RDS ON


    Original     		PDF APT11058B2FLL APT11058LFLL O-264 O-264 O-247 diode 640 106F APT11058B2FLL APT11058LFLL APT30DF120

    APT11058B2FLL

    Abstract: APT11058LFLL
    Text: APT11058B2FLL APT11058LFLL 1100V 20A 0.580W POWER MOS 7TM FREDFET Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7TM by significantly lowering RDS ON


    Original     		PDF APT11058B2FLL APT11058LFLL O-264 O-264 O-247 APT11058B2FLL APT11058LFLL

    catalog mosfet Transistor smd

    Abstract: APTGU140A60T APTGU180DA120 military resistors catalog APTLM50H10FRT APT40M35JVFR 24 volt output smps design APT5SC120K APT50M50JVR induction furnace using igbt
    Text: 1 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of this market. Our commitment is to maintain and enhance


    Original     		PDF

    APT100GF60LR

    Abstract: 1200 volt mosfet FREDFETs sot-227 footprint APT75GP120JDF3 APT609RK3VFR APT8075BVR APT5010jvr APT20M19JVR APT1001RBVR
    Text: Discrete Power Products 2003 Advanced Power Technology Technology… Beginning in 1984 with the introduction of Power MOS IV , APT has maintained a position at the forefront of power semiconductor technology. Our focus is on the high voltage, high power and high performance segments of


    Original     		PDF