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Text: AM048MX-QG-R August 2007 Rev. 1 DESCRIPTION AMCOM’s AM048MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG-R is designed for high power microwave applications, operating up to 6 GHz. The QG series is in a plastic package with all leads bent
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AM048MXQG
Abstract: AM048MX AM048MX-QG
Text: AM048MX-QG Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM048MX-QG is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG is designed for high power microwave applications, operating up to 6 GHz. The QG
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Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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AM048MX-QG-R
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Text: AM048MX-QG-R March 2010 Rev 2 Plastic Packaged GaAs Power FET DESCRIPTION AMCOM’s AM048MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG-R is designed for high power microwave applications, operating up to 6GHz.
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