AM048MX-QF
Abstract: 982 Series AMCOM AM048MX
Text: AM048MX-QF Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM048MX-QF is a part of the QF series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QF is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM048MX-QF
AM048MX-QF
Vds46
982 Series
AMCOM
AM048MX
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Abstract: No abstract text available
Text: AM048MX-QG-R August 2007 Rev. 1 DESCRIPTION AMCOM’s AM048MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG-R is designed for high power microwave applications, operating up to 6 GHz. The QG series is in a plastic package with all leads bent
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AM048MX-QG-R
AM048MX-QG-R
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Abstract: No abstract text available
Text: AM048MX-89 September 2004 Rev. 1 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz. The SOT-89 series is in a plastic package with all leads in the same plane for surface mount. The bottom
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AM048MX-89
AM048MX-89-R
OT-89
32dBm
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Untitled
Abstract: No abstract text available
Text: AM048MX-QF-R Plastic Packaged GaAs Power FET April 2010 Rev 2 DESCRIPTION AM048MX-QF-R is a GaAs MESFET with a total gate width of 4.8mm. It is RoHS compliant Denoted by –R . The AM048MX-QF-R is designed for high power microwave applications, operating up to 6GHz. The QF
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AM048MX-QF-R
AM048MX-QF-R
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Abstract: No abstract text available
Text: AM048MX-QF-R Plastic Packaged GaAs Power FET August 2007, Rev. 1 DESCRIPTION AM048MX-QF-R is a GaAs MESFET with a total gate width of 4.8mm. It is RoHS compliant Denoted by –R . The AM048MX-QF-R is designed for high power microwave applications, operating up to 6 GHz. The QF
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AM048MX-QF-R
AM048MX-QF-R
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Abstract: No abstract text available
Text: AM048MX-89-R Plastic Packaged GaAs Power FET April 2010 Rev 3 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz.
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AM048MX-89-R
AM048MX-89-R
OT-89
32dBm
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Untitled
Abstract: No abstract text available
Text: AM048MX-89-R August 2007 Rev. 1 DESCRIPTION AMCOM’s AM048MX-89-R is part of SOT-89 Series of GaAs MESFETs. This part has a total gate width of 4.8 mm. The AM048MX-89-R is designed for high power microwave applications, operating up to 5 GHz. The SOT-89 series is in a plastic package with all leads in the same plane for surface mount. The bottom
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AM048MX-89-R
AM048MX-89-R
OT-89
32dBm
Tem785
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AM048MXQG
Abstract: AM048MX AM048MX-QG
Text: AM048MX-QG Plastic Packaged GaAs Power FET September 2002 Rev. 3 DESCRIPTION AMCOM’s AM048MX-QG is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG is designed for high power microwave applications, operating up to 6 GHz. The QG
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AM048MX-QG
AM048MX-QG
AM048MXQG
AM048MX
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AM048MX-QG-R
Abstract: No abstract text available
Text: AM048MX-QG-R March 2010 Rev 2 Plastic Packaged GaAs Power FET DESCRIPTION AMCOM’s AM048MX-QG-R is a part of the QG series of GaAs MESFETs. This part has a total gate width of 4.8mm. The AM048MX-QG-R is designed for high power microwave applications, operating up to 6GHz.
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AM048MX-QG-R
AM048MX-QG-R
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Abstract: No abstract text available
Text: ISO 9001:2008 Certified AMCOM Communications, Inc. Product Brochure April 2015 ISO 9001:2008 Certified Registration # 220501.1Q ISO 9001:2008 Certified Section 1 - AMCOM Communications, Inc. AMCOM was established in December 1996 by a group of microwave engineers experienced in both
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