Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE32484A Search Results

    SF Impression Pixel

    NE32484A Price and Stock

    NEC Electronics Group NE32484A

    Electronic Component
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT Distribution NE32484A 750
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    NE32484A Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32484A NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A NEC Semiconductor Selection Guide Original PDF
    NE32484A NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32484A NEC Semiconductor Selection Guide 1995 Original PDF
    NE32484A Unknown FET Data Book Scan PDF
    NE32484AS NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32484AS NEC Ultra low noise pseudomorphic HJ FET. Original PDF
    NE32484A-SL NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A-T1 NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF
    NE32484A-T1A NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE32484A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


    Original     		PDF NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking

    NE32484AS

    Abstract: NE32484A NE32484A-SL NE32484A-T1 FET 4812
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 FET 4812

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1 1S2118
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 1S2118

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 1.2 21 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original     		PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1

    micro servo 9g

    Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF V20HL, V25HS, V30HL, V30MX, V35HS, V40HL, V50HL, V55PI, X10679EJDV0SG00 micro servo 9g uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		PDF X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PDF PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		PDF X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408

    lg crt monitor circuit diagram

    Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
    Text: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of


    Original     		PDF X10679EJGV0SG00 lg crt monitor circuit diagram micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY

    NE42484

    Abstract: NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324
    Text: Packaging Schematic All dimensions are in millimeters, and typical unless otherwise specified. Drawings are not to scale. 84 1.78 ± 0.2 S 1.78 ± 0.2 D W S G 0.5 ± 0.1 ALL LEADS 1.0 MIN (ALL LEADS)- (84S/84AS) 1.7 MIN (ALL LEADS) (84-SL/84A-SL) 1.7 MAX


    Original     		PDF 84S/84AS) 84-SL/84A-SL) NE32484A NE42484A NE32584C NE76084 NE32984D NE76184A NE33284A NE42484 NE42484A NE76084 NE33284A 84AS NE32584C NE32484A NE32984D NE76184A ne324

    MICROPROCESSOR Z80

    Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
    Text: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call


    Original     		PDF Z80TM V20TM, V20HLTM, V25TM, V25HSTM, V30TM, V30HLTM, V33TM, V33ATM, V35TM, MICROPROCESSOR Z80 uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro

    The Japanese Transistor Manual 1981

    Abstract: NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original     		PDF

    GLDS

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0 .6 dB typical at 12 G H z 24 • HIGH ASSOCIATED GAIN: 21 11 dB typical at 12 G H z • L g = 0.25 nm, W g = 200 nm


    OCR Scan     		PDF NE32484A resul83 IS12I IS22I2 IS12S21I NE32484AS NE32484A-T1 NE32484A-SL. GLDS

    TH 2066.4

    Abstract: 13811
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 [im, W g = 200 [im


    OCR Scan     		PDF NE32484A NE32484Ais NE32484AS NE32484A-T1 NE32484A-SL. 24-Hour TH 2066.4 13811

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn


    OCR Scan     		PDF NE32484A TheNE32484Ais NE32484AS E32484A-T1 NE32484A-SL. 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, I d s = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 21 L g = 0.25 jim , W g = 200 |im


    OCR Scan     		PDF NE32484A NE32484A NE32484AS NE32484A-T1 NE32484A-SL.

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m T3 • Lg = 0.25 |im, W q = 200 |im


    OCR Scan     		PDF NE32484A E32484Ais IS12I IS12S21I NE32484AS NE32484A-T1 NE32484A-SL.

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 |im, Wg = 200 urn


    OCR Scan     		PDF NE32484A E32484A NE32484AS NE32484A-T1 NE32484A-SL. L427525

    NE32184A

    Abstract: Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A NE20248 NE24200 NE32084
    Text: - 158 - & f m € m tí: £ & m it V* Ì V K V s X Vg s * X I* £ * (V) * (A) >< P d /P ch * (HO Ig s s (max) (A) Vg s (V) & % Id s (min) (max) V ds (A) (A) (V) (min) (max) V d s (V) (V) (V) NE345L-10B NEC L~-S-Band PA GaAs N D 15 DS -7 0 9 D 50 4 NE345L-20B


    OCR Scan     		PDF NE345L-10B NE345L-20B NE20248 NE24200 NE24283A NE32084 4/12GBz NE76038 4/12GHz NE76184A NE32184A Ku-BAND NEZ1011-4A nec x-band ne32684a hz nec NE42184A

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		PDF NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im


    OCR Scan     		PDF NE32684A E32684A IS12I IS12S21I NE32684A NE32484AS NE32484A-T1 NE32684A-SL.

    ne71084

    Abstract: NE76084 NE71000 NE32684A NE67383 NE72000 NE32584 ne72089
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs 1.0 to 40 12 2.0 10 0.6 11.0 2.0 20 11.0 00 Chip C or B 1-5 200 1.OtO 40 12 2.0 10 0.6 11.0 2-0 20 11.0 oo Chip D 1-22 280 0.1 to 18 12 2.0 10 0.75 10.5 2.0 20 12.0 00 Chip 0.3 2« 0.1 to 18 12 3.0


    OCR Scan     		PDF NE24200 NE32400 NE33200 NE67300 NE71000 NE76000 NE76100 NE24283B NE67383 NE71083 ne71084 NE76084 NE32684A NE72000 NE32584 ne72089

    ne71084

    Abstract: GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application
    Text: Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical Spécifications @ Ta * ZS'C ftffiW M M R M Bat* Part Humber Test Frequency Gita LeagM Width f Range | Frequency C6HZ Min) Pows Bias NF/Gi Bias Available Vos Ids HFow 6* Vds Ids PliB Package


    OCR Scan     		PDF S3200 NE87300 NE76000 NE24283B ne71084 GaAs MESFET NE25139 NE4200 NE32684A NE71000 71083 ne72089 NE72000 MESFET Application