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    NE32484AS Search Results

    NE32484AS Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE32484AS NEC ULTRA LOW NOISE PSEUDOMORPHIC HJ FET Original PDF
    NE32484AS NEC Ultra low noise pseudomorphic HJ FET. Original PDF
    NE32484A-SL NEC C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET Original PDF

    NE32484AS Datasheets Context Search

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    The Japanese Transistor Manual 1981

    Abstract: NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A
    Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid


    Original
    PDF

    The Japanese Transistor Manual 1981

    Abstract: japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking
    Text: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32484A C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm The NE32484A is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Its excellent


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    PDF NE32484A NE32484A NE32484A-SL The Japanese Transistor Manual 1981 japanese transistor manual 1981 NEC Ga FET marking L K 2645 transistor NE32484A-SL NE32484A-T1 NE32484A-T1A NEC 3552 nec gaas fet marking

    NE32484AS

    Abstract: NE32484A NE32484A-SL NE32484A-T1 FET 4812
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original
    PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 FET 4812

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1 1S2118
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original
    PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1 1S2118

    NE32484A

    Abstract: NE32484AS NE32484A-SL NE32484A-T1
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA FEATURES 1.4 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 24 1.2 21 • LG = 0.25 µm, WG = 200 µm • LOW COST METAL/CERAMIC PACKAGE • TAPE & REEL PACKAGING OPTION AVAILABLE


    Original
    PDF NE32484A NE32484A NE32484A-SL. 24-Hour NE32484AS NE32484A-SL NE32484A-T1

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32684A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.5 dB typical at 12 GHz HGH ASSOCIATED GAIN: n 1 .5 dB Typical at 12 GHz _ CO T> La s 0.20 pm, Wa = 200 im


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    PDF NE32684A E32684A IS12I IS12S21I NE32684A NE32484AS NE32484A-T1 NE32684A-SL.

    GLDS

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0 .6 dB typical at 12 G H z 24 • HIGH ASSOCIATED GAIN: 21 11 dB typical at 12 G H z • L g = 0.25 nm, W g = 200 nm


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    PDF NE32484A resul83 IS12I IS22I2 IS12S21I NE32484AS NE32484A-T1 NE32484A-SL. GLDS

    TH 2066.4

    Abstract: 13811
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 [im, W g = 200 [im


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    PDF NE32484A NE32484Ais NE32484AS NE32484A-T1 NE32484A-SL. 24-Hour TH 2066.4 13811

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I d s = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz • Lg = 0.25 jam, W g = 200 irn


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    PDF NE32484A TheNE32484Ais NE32484AS E32484A-T1 NE32484A-SL. 24-Hour

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V d s = 2 V, I d s = 10 mA FEATURES VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz 24 HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz 21 L g = 0.25 jim , W g = 200 |im


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    PDF NE32484A NE32484A NE32484AS NE32484A-T1 NE32484A-SL.

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY Vos = 2 V, Ids = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m T3 • Lg = 0.25 |im, W q = 200 |im


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    PDF NE32484A E32484Ais IS12I IS12S21I NE32484AS NE32484A-T1 NE32484A-SL.

    Untitled

    Abstract: No abstract text available
    Text: ULTRA LOW NOISE PSEUDOMORPHIC HJ FET NE32484A NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY V ds = 2 V, I ds = 10 mA FEATURES • VERY LOW NOISE FIGURE: 0.6 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: 11 dB typical at 12 GHz m • Lg = 0.25 |im, Wg = 200 urn


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    PDF NE32484A E32484A NE32484AS NE32484A-T1 NE32484A-SL. L427525