NE23300 Search Results

NE23300 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
NE23300		NEC	Super low noise HJ FET (space qualified).		Original	PDF

NE23300 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
NE23300 Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VDS = 2 V, IDS = 10 mA • GATE LENGTH: 0.3 µm • GATE WIDTH: 280 µm DESCRIPTION The NE23300 is a Hetero-Junction FET chip that utilizes the junction between Si-doped AlGaAs and undoped InGaAs to	Original	PDF	NE23300 NE23300 24-Hour
LORB Abstract: NE2720 NE334S01 Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18	OCR Scan	PDF	NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: 0.75 dB typical at 12 GHz V ds = 2 V, I ds = 10 mA • HIGH ASSOCIATED GAIN: 10.5 dB Typical at 12 GHz cû • GATE LENGTH: 0 3 \im	OCR Scan	PDF	NE23300 NE23300 CHARACTERIST0071" lS211 IS12S21I 24-Hour
Untitled Abstract: No abstract text available Text: SUPER LOW NOISE HJ FET SPACE QUALIFIED FEATURES NE23300 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • VERY LOW NOISE FIGURE: V ds = 2 V, Ids = 10 mA 0.75 dB typical at 12 GHz • HIGH ASSOCIATED GAIN: CO 10.5 dB Typical at 12 GHz •o • GATE LENGTH: 0.3 urn	OCR Scan	PDF	NE23300 NE23300
NEC Ga FET marking L Abstract: tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a Text: GET-30749, Revision C NEC NEC Corporation Tamagawa Plant 1753,Shimonumabe, Nakahara-lcu, Kawasaki, Kanagawa, 211-8666 Specification Control Drawing o f Grade L GaAs Devices fo r Satellite Applications Prepared on: September 28,2000 Prepared by: Masahito Kushima	OCR Scan	PDF	GET-30749, GET-30749 NE29200 NE674 uPG501B uPG501P uPG503B uPG503P uPG506B NEC Ga FET marking L tamagawa gaas fet marking B mmic amplifier marking code N5 NE272 FET marking code .N5 ne29200 NE23383B NE292 gaas fet marking a