Untitled
Abstract: No abstract text available
Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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KM48V2104B
Abstract: KM48C2104B
Text: FUNCTION GUIDE MEMORY ICs Density 16M bit Org. 4Mx4 Power Supply Port Number, 3.3V+0.3V KM44V4104B# features ' * w » 60/70/80 EDO 2K 50/60/70 Fast Page{4K) KM44V4104BL# 16M B/W 2Mx8 5V±10% KM48C2000B# Packages ' : K.-24 Pin S 0j(300m il) S.-24 Pin TSOP-ll(300mil)
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300mil)
300mil]
300milj
KM44V4104B#
KM44V4104BL#
KM48C2000B#
KM48C2000B-L#
KM48C2100B#
KM48C2100B
KM48C2004B#
KM48V2104B
KM48C2104B
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EH18
Abstract: 304X4
Text: KM44V4104BS CMOS DRAM ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44V4104BS
16Mx4,
512Kx8)
44V4104BS
EH18
304X4
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km44c4104b
Abstract: No abstract text available
Text: KM44C4004B, KM44C4104B KM44V4004B, KM44V4104B CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION T h is is a fa m ily o f 4 ,1 9 4 ,3 0 4 x 4 bit E x te n d e d D a ta O u t C M O S D R A M s. E x te n d e d D a ta O u t M o d e o ffe rs
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KM44C4004B,
KM44C4104B
KM44V4004B,
KM44V4104B
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DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BS
D034b64
DG34B
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KM44C4004B
Abstract: No abstract text available
Text: KM44C4004BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004B
KM44C4004BS
0034S12
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KM44C4104bk
Abstract: cd-rom circuit diagram
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM44C4
KM44C4104BK
7Tbm42
0034bb2
KM44C4104bk
cd-rom circuit diagram
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Untitled
Abstract: No abstract text available
Text: KMM332F400BS-L KMM332F410BS-L DRAM MODULE KMM332F400BS-L & KMM332F410BS-L Fast Page with EDO Mode 4M x 32 DRAM SODIMM Using 4MX4, 4K & 2K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332F40 1 0BS is a 4Mx32bits Dynamic Part Identification
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KMM332F400BS-L
KMM332F410BS-L
KMM332F400BS-L
KMM332F410BS-L
KMM332F40
4Mx32bits
24-pinTSOPII
72-pin
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kmm366f410b
Abstract: No abstract text available
Text: KMM366F400BK KMM366F410BK DRAM MODULE KMM366F400BK & KMM366F410BK EDO Mode without buffer 4Mx64 DRAM DIMM based on 4Mx4, 4K & 2K Refresh, 3.3V G EN ERA L D ESCRIPTIO N FEATURES The Samsung KMM366F40 1 OBK is a 4M bit x 64 Dynamic RAM high density memory module. The
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KMM366F400BK
KMM366F410BK
KMM366F400BK
KMM366F410BK
4Mx64
KMM366F40
300mil
168-pin
kmm366f410b
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KM44V4004BS
Abstract: irf ddt D0350
Text: KM44 V 4 0 0 4 B S CMOS DR A M ELECTRONICS 4 M x4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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16Mx4,
512Kx8)
KM44V4004BS
7Tb414B
D0350fl3
KM44V4004BS
irf ddt
D0350
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F41OBK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41 OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V G EN ERA L D ESC RIPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372F400BK/BS
KMM372F41OBK/BS
KMM372F400BK/BS
KMM372F41
4Mx72
KMM372F40
300mil
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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16Mx4,
512Kx8)
KM44C4104BK
7Tb4142
0G34bb2
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Untitled
Abstract: No abstract text available
Text: KMM372F400BK/BS KMM372F410BK/BS DRAM MODULE KMM372F400BK/BS & KMM372F41OBK/BS Fast Page with EDO Mode 4Mx72 DRAM DIMM with ECC, 4K & 2K Refresh, 3.3V GENERAL DESCR IPTIO N FEATURES The Samsung KMM372F40 1 0B is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM372F400BK/BS
KMM372F410BK/BS
KMM372F41OBK/BS
4Mx72
KMM372F40
KMM372F400BK
cycles/64ms
KMM372F400BS
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Untitled
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic H A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4004BK
512Kx8)
7Tb414E
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RB414
Abstract: B4145 KM44V4004BK
Text: KM44V4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44V4004BK
16Mx4,
512Kx8)
RB414
B4145
KM44V4004BK
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1004CL
Abstract: 44V16 366F 44C40 372V3280 2100B-7 M5368 KMM5368103B 44v16100 dram module kmm 2mx32
Text: FUNCTION GUIDE 1. INTRODUCTION DRAM Module I. Single In-Line M em ory M odule SIMM l-i. Fast Page ( FP ) Mode 5 V [T6M~Based j- f — ftM x 3 g "KMM5321200BW/BWG-6 H ~KM M 5321200BW/BWG-' -|lM x 3 6 [2MX32 KMM5322100BKU/BKUG-5 K —[2Mx36 H H | KMM5322100BKÜ/BKÛ g ^K 1<M M 5322-| OOBKU/BKUG3-7
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KMM5321200BW/BWG-6
5321200BW/BWG-'
KMM5361203BW/8
KMM5322200BW/BWG-6
KMM5322100BKU/BKUG-5
MM5361203BW/BWG-7
KMM5322200BW/BWG-7
2MX32
KMM5322100BK
2Mx36
1004CL
44V16
366F
44C40
372V3280
2100B-7
M5368
KMM5368103B
44v16100
dram module kmm 2mx32
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d038
Abstract: KM44V4004B KM44V4104BK KMM374F400BK CA5B
Text: KMM374F400BK KMM374F410BK DRAM MODULE KMM374F400BK & KMM374F410BK EDO Mode without buffer 4Mx72 DRAM DIMM with ECC based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F40 1 0BK is a 4M bit x 72 Dynamic RAM high density memory module. The
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KMM374F400BK
KMM374F41
KMM374F410BK
4Mx72
KMM374F40
300mii
168-pin
KMM374F4C)
d038
KM44V4004B
KM44V4104BK
KMM374F400BK
CA5B
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Untitled
Abstract: No abstract text available
Text: K M 4 4 C 4 10 4 B S CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM44C4104BS
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Untitled
Abstract: No abstract text available
Text: KM44C4004B S CMOS D R AM ELECTR O NICS 4 M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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PDF
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KM44C4004B
KM44C4004BS
D034S11
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1004CL
Abstract: KM48V2104B KM44V16104AK KM416V256BL 4M DRAM EDO KM48V2100B 44v16104 1mx1 DRAM DIP
Text: CMOS DRAM General Information 2. Product Guide D e iifty m » iJ P P N M I>1SS:<?p7ÍRRk3^ 1M bit 1Mx1 5V±10% KM41C1000D# 256Kx4 5V±10% KM44C256D# 128Kx8 5V±10% KM48C128# 60/70/80 Fast Page P:18 Pin DIP 1Mx1 60/70/80 Fast Page J:20 Pin SOJ 55/60/70 Fast Page
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KM41C1000D#
KM41C1000D-L#
256Kx4)
256Kx4
KM44C256D#
KM44C256D-L#
128Kx8
KM48C128#
KM48C128
KM48C124#
1004CL
KM48V2104B
KM44V16104AK
KM416V256BL
4M DRAM EDO
KM48V2100B
44v16104
1mx1 DRAM DIP
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4104B
Abstract: No abstract text available
Text: KM44C4004BK CMOS DRAM ELECTRONICS 4 M x 4 Bit C M O S Dynamic R A M with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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OCR Scan
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KM44C4004BK
4104B
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KM416C60-7
Abstract: KM48C2104B KM416C60-6 KM48C2004B dram 64kx1 km416c60 KM44V1004CL-7
Text: General Information CMOS DRAM 1. Introduction j KM41C1000D-6 1M bit KM41C1000D-7 KM41C1000D-8 I KM41C1000D-L6|—¡ KM41C1000D-L7[— j KM41C1000D-L8 1 4M bit M 64Kx1« 4Mx1 KM48C124-55 —j KM48C124-6 KM48C124-7 KM416C60-55 — KM416C60-6 KM416C60-7 KM416C64-55
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KM41C1000D-6
KM41C1000D-7
KM41C1000D-8
KM41C1000D-L6
KM41C1000D-L7
KM41C1000D-L8
KM48C124-55
KM48C124-6
KM416C60-6
KM416C64-6
KM416C60-7
KM48C2104B
KM48C2004B
dram 64kx1
km416c60
KM44V1004CL-7
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Untitled
Abstract: No abstract text available
Text: KM M 3 7 2 F 8 0 0 B K KM M 372F81 OB K DRAM MODULE K M M 3 7 2 F 8 0 0 B K / K M M 3 7 2 F 8 1 0 B K Fast Page with EDO Mo de 8M x 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V G E N E R A L DESCRI PTI ON F E A TU RE S The Samsung KMM372F80 1 0B is a 8Mx72bits Dynamic RAM
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372F81
KMM372F80
8Mx72bits
300mil
16bits
48pin
168-pin
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Untitled
Abstract: No abstract text available
Text: KMM374F400BK DRAM Module ELECTRONICS KMM374F400BK & KMM374F410BK EDO Mode without buffer 4Mx72 DRAM DIMM with ECC based on 4Mx4, 4K & 2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F40 1 0BK is a 4M bit x 72 • Part Identification Dynamic RAM high density memory module. The
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KMM374F400BK
KMM374F410BK
4Mx72
KMM374F40
300mil
168-pin
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