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    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b4E D • 7Tbm42 GD12174 71b «SflG K N-CHANNEL POWER MOSFETS IRF620/621/622/623 FEATURES • • • • • • • Lower R d s ON Improved Inductive ruggedness Fast switching times R ugged polysilicon gate cell structure Lower input capacitance


    OCR Scan     		PDF 7Tbm42 GD12174 IRF620/621/622/623 IRF620 IRF621 IRF622 IRF623

    km41c1001

    Abstract: No abstract text available
    Text: SAMSUNG SEMICONDUCTOR INC S3E D • 7Tbm42 KM41C1001A CMOS DRAM T '4 -6 '5 1 3 - 1 M x 1 Bit Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: tcAc tnc 70ns 20ns 130ns KM41C1001A- 8 80ns 20ns 150ns KM41C1001A-10 100ns 25ns 180ns


    OCR Scan     		PDF 7Tbm42 KM41C1001A KM41C1001A 18-LEAD 7Tb414E 20-LEAD 20-PIN km41c1001

    R0310

    Abstract: 64KX4 samsung CMOS SRAM 28-pin SOJ SRAM
    Text: I SAMSUNG ELECTRONICS INC b?E D m 7Tbm42 KM 64258B 00175fc.b Ö2T SI1GK CM OS SRAM 6 4 K X 4 Bit High-Speed CMOS Static RAM With OE FEATURES GENERAL DESCRIPTION • Fast Access Tim e: 15, 20, 25ns (max.) • Low Power Dissipation Standby (TTL) : 40m A (m ax.)


    OCR Scan     		PDF KM64258B 7Tbm42 D017Sfc 64KX4 KM642S8BP/J-15: 140mA KM64258BP/J-20: 130mA KM64258BP/J-25: 120mA R0310 samsung CMOS SRAM 28-pin SOJ SRAM

    ka7309

    Abstract: TI 81W CAMERA 803 CMOS sync timing generator T3D 77 KS7214 78235 T3D 91 oil temperature sensor generator
    Text: KS7214 Timing & SYNC. Generator for B/W CCD GENERAL DESCRIPTION KS7214 is Timing control IC for generating timing signal & sync signal which required camera system using monochrome CCD Image sensor. FUNCTIONS - EIA/CCIR STANDARDS TIMING MODE - HI-BAND/ NORMAL TIMING MODE


    OCR Scan     		PDF KS7214 KS7214 48-QFP-0707 37T37 71b4142 48-QFP-0707 ka7309 TI 81W CAMERA 803 CMOS sync timing generator T3D 77 78235 T3D 91 oil temperature sensor generator

    250M

    Abstract: IRFS820 IRFS821
    Text: N-CHANNEL POWER MOSFETS IRFS820/821 FEATURES TQ-220F • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF IRFS820/821 IRFS820 IRFS821 to-220f 250M

    Untitled

    Abstract: No abstract text available
    Text: KM641001A CMOS SRAM 256K x 4 Bit With ÜE High-Speed CMOS Static RAM GENERAL DESCRIPTION FEATURES The KM641001A is a 1,048,576-bit high-speed Static Random Access Memory organized as 262,144 words • Fast Access Time 15,17,20 ns(Max.) • Low Power Dissipation


    OCR Scan     		PDF KM641001A KM641001A 576-bit KM641001A-15 KM641001A-17 KM641001A-20

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC m 4SE D 7 % H 1 4 2 000=1011 b • " T V'?>1 - VS> MJD30/30C PHP EPITAXIAL SILICON TRANSÌSTOR GENERAL PURPOSE AMPLIFIER. LOW SPEED SWITCHING APPLICATIONS. D-PACK FOR SURFACE MOUNT APPLICATIONS • Lead Formed or Surface Mount Applications (No Suffix


    OCR Scan     		PDF MJD30/30C TIP30 TIP30C MJD30 MJD30C -200m 300/tS,

    Untitled

    Abstract: No abstract text available
    Text: S A MS UN G E L E C T R O N I C S INC b?E ]> 7^142 CMOS VIDEO RAM KM428C128 1 2 8 K X 8 Bit CMOS Video RAM FEATURES • Dual port A rchitecture 128K X 8 bits RAM port 256 X 8 bits SAM port • Performance RAM access tim e tRAC • • • • • • •


    OCR Scan     		PDF KM428C128 150ns 130ns 40-PIN

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM364E213BK/BS KMM364E213BK/BS Fast Page with EDO Mode 2Mx64 DRAM DIMM based on 2Mx8, 2K Refresh, 5V G ENERAL DESCRIPTION FEATURES The Samsung KMM364E213B is a 2M bit x 64 Dynamic RAM high density memory module. The • Part Identification Samsung KMM364E213B consists of eight CMOS


    OCR Scan     		PDF KMM364E213BK/BS KMM364E213BK/BS 2Mx64 KMM364E213B KMM364E213BS cycles/32ms 1000mil) KMM364E213BK

    SSH60N06

    Abstract: No abstract text available
    Text: SA M S UN G E L E C T R O N I C S INC b4E ]> 7^4142 SSH60N06/60N10 FEATURES • • • • • • • • GG 15 4b S 45b « S M Ò K N-CHANNEL POWER MOSFETS TO-3P Lower Rds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure


    OCR Scan     		PDF SSH60N06/60N10 O-220 SSH60N06 SSH60N1 SSH60N10 SSM60N06/60N10 SSH60N06

    Untitled

    Abstract: No abstract text available
    Text: DRAM MODULE KMM372F213BK/BS KMM372F213BK/BS Fast Page with EDO Mode 2Mx72 DRAM DIMM with ECC, 2K Refresh, 3.3V G E N E R A L DESCRIPTION FEA T U R ES The Samsung KMM372F213B is a 2M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F213B consists of nine CMOS


    OCR Scan     		PDF KMM372F213BK/BS KMM372F213BK/BS 2Mx72 KMM372F213B 300mil KMM372F213BK cycles/32ms KMM372F213BS

    ADC CCIR 601

    Abstract: Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 KS0122 multi S-Video Input
    Text: KS0122 Data Sheet MULTIMEDIA VIDEO MULTISTANDARD VIDEO DECODER The KS0122 converts analog NTSC or PAL video in composite or S-video format to digitized component video. Output data can be selected for CCIR 601 or square pixel sample rates in either YUV or RGB formats. All required


    OCR Scan     		PDF KS0122 100-QFP-1420C ADC CCIR 601 Solid state CCIR ca 151 KS0122-S aexo chroma 175 ic CCIR601 KS0119 multi S-Video Input

    U420

    Abstract: ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148
    Text: SAM S UN G E L E C T R O N I C S INC b7E ]> • 7Tbm4B IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • DD17Pbfi TST ■ SMGK D-PACK Lower R d s o n Improved inductive ruggedness Fast switching times Rugged poiysilicon gate cell structure


    OCR Scan     		PDF 0D172bfl IRFR420/422 IRFU420/422 IRFR420/U420 IRFR422/U422 IRFR420/421 U420 ic 74148 74148 IC IRFR420 16-4 74148 IRFR422 irfr520 74148 free irfu420 of ic 74148

    HMR-11000

    Abstract: HMR11000
    Text: SAMSUNG ELECTRONICS INC O HARRIS bOE D 7^4145 OGlliaO ^ 05 HMR-11000 GaAs MMIC Attenuator DC-18 GHz PRODUCT DATA Features Applications * Low VSWR • Gain Control * Ultra Low Power Consumption • Temperature Compensation * Voltage Controlled Impedence • SPST Switching


    OCR Scan     		PDF HMR-11000 DC-18 HMR11000

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b?E D • 7 ^ 4 1 4 2 DDlSSSfl 171 I KM41C4000B SUGK CMOS DRAM 4 M x 1 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM41C4000B is a high speed CMOS 4,194,304 x 1 Dynamic Random Access Memory. Its de­


    OCR Scan     		PDF KM41C4000B KM41C4000B 110ns KM41C4000B-7 130ns KM41C4000B-8 150ns KM41C4000B-6 SN54BCT8373A i1bl723

    Untitled

    Abstract: No abstract text available
    Text: KM64BV4002 CMOS SRAM 1Mx4Bit With /OE High-Speed BiCMOS Static RAM (3.3V Operating) FEATURES GENERAL DESCRIPTION • Fast Access Time 12,13,15 ns(Max) • Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS): 30 mA(Max.) Operating KM64BV4002J-12:160mA(Max.)


    OCR Scan     		PDF KM64BV4002 KM64BV4002J-12 160mA KM64BV4002J-13 KM64BV4002J-15 KM64BV4002J 32-SOJ-400 KM64BV4002 304-bit

    Untitled

    Abstract: No abstract text available
    Text: KSR2105 PNP EPITAXIAL SILICON TRANSISTOR SWITCHING APPLICATION Bias Resistor Built In SOT-23 • Switching Circuit, Inverter, Interlace circuit Driver circuit • Built in bias Resistor (R,=4.7K1), R2=10Kfl) • Complement to KSR1105 ABSOLUTE MAXIMUM RATINGS (Ta=25°C )


    OCR Scan     		PDF KSR2105 OT-23 10Kfl) KSR1105 7Tbm42

    Untitled

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b7E D • 7TL,4m2 DDlbSSb TT3 « S M C K KM424C257 CMOS VIDEO RAM 256K X 4 Bit CMOS Video RAM FEATURES GENERAL DESCRIPTION • Dual port Architecture 256K x 4 bits RAM port 512 x 4 bits SAM port * Perform ance The Samsung K M 4 2 4 C 2 5 7 is a CMOS 2 5 6 K X 4 bit Dual


    OCR Scan     		PDF KM424C257 110ns 130ns 150ns 28-PIN

    Untitled

    Abstract: No abstract text available
    Text: KM44C1003C/CL/CSL CMOS DRAM 1M x4B it CMOS Quad CAS RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES • Performance range: tR A C tC A C tR C KM44C1003C/CIVCSL-5 50ns 13ns 90ns KM44Ú1003C/CL/CSL-6 60ns 15ns 110ns KM44C1003C/CL/CSL-7 70ns 20ns 130ns KM44C1003C/CL/CSL-8


    OCR Scan     		PDF KM44C1003C/CL/CSL KM44C1003C/CIVCSL-5 1003C/CL/CSL-6 110ns KM44C1003C/CL/CSL-7 130ns KM44C1003C/CL/CSL-8 150ns cycle/16m 7TL4142

    Untitled

    Abstract: No abstract text available
    Text: KM416C1000BJ CMOS DRAM ELECTRONICS 1Mx16Bit CMOS Dynamic RAM with Fast Page Mode D ESC R IPT IO N This is a family of 1,048,576 x16 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh


    OCR Scan     		PDF KM416C1000BJ 1Mx16Bit 1Mx16 71bm4E 16C1000BJ 40SOJ 1000B

    Untitled

    Abstract: No abstract text available
    Text: KM44C4005BS CMOS DRAM ELECTRONICS 4M x 4 Bit CMOS Quad CAS DRAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4bit Quad CAS with Extended Data Out Mode DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode.


    OCR Scan     		PDF KM44C4005BS 16Mx4, 512Kx8) 71b414E 003455b

    44C160

    Abstract: No abstract text available
    Text: KM44C16004A, KM44C16104A CMOS DRAM 1 6 M x 4 B i t CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a fam ily of 16,777,216 x 4 bit Extended Data Out M ode CM O S DRAMs. Extended Data O ut Mode offers high speed random access of m em ory cells w ithin the sam e row. Refresh cycle 4K Ref. o r 8K Ref. ,


    OCR Scan     		PDF KM44C16004A, KM44C16104A 16Mx4 44C160

    KS57C5016

    Abstract: No abstract text available
    Text: K S57C 5016 4-BIT CMOS Microcontroller ELECTRONICS Product Specification OVERVIEW The KS57C5016 single-chip CMOS microcontroller is designed for high performance using Samsung's newest 4-bit CPU core and the SAM4 product development approach Samsung Arrangeable Microcontrollers . With its


    OCR Scan     		PDF KS57C5016 64-pin anb34 fx/64 002basa

    Jzc 40F

    Abstract: No abstract text available
    Text: CMOS DIGITAL INTEGRATED CIRCUIT KS0066 DOT MATRIX LCD CONTROLLER & DRIVER The K S0066 is a dot matrix LCD driver & controller LSI which is fabricated by low power CMOS technology FUNCTION • Character type dot matrix LCD driver & controller • Internal driver: 16 common and 40 segment signal output.


    OCR Scan     		PDF KS0066 S0066 32kinds KSQ066F00, Jzc 40F