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    CA5B Search Results

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    CA5B Price and Stock

    Suzhou Good-Ark Electronics Co Ltd GSECA5B003

    TVS, SNAPBACK ESD, SINGLE, BI-DI
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GSECA5B003 Cut Tape 15,767 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
    • 10000 $0.07043
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    GSECA5B003 Digi-Reel 15,767 1
    • 1 $0.36
    • 10 $0.219
    • 100 $0.36
    • 1000 $0.09064
    • 10000 $0.07043
    Buy Now
    GSECA5B003 Reel 10,000 10,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.05803
    Buy Now

    Finisar Corporation FCCG125SD1CA5B

    25G, FULL-DUPLEX, ACTIVE OPTICAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCCG125SD1CA5B Bulk 288
    • 1 -
    • 10 -
    • 100 -
    • 1000 $102.01708
    • 10000 $102.01708
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    Finisar Corporation FCBG125SD1CA5B

    25G, FULL-DUPLEX, ACTIVE OPTICAL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey FCBG125SD1CA5B Bulk 288
    • 1 -
    • 10 -
    • 100 -
    • 1000 $72.87149
    • 10000 $72.87149
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    SIWARD Crystal Technology Co Ltd OSCA5B500-SCO-H832

    OSC XO 156.25MHZ LVDS 3.3V SMD
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey OSCA5B500-SCO-H832 Reel 1,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 $6.08119
    • 10000 $6.08119
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    Coherent Inc FCCG125SD1CA5B

    Cable Assembly Fiber Optic 1.5m SFP to SFP Plug-Plug - Bulk (Alt: FCCG125SD1CA5B)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas FCCG125SD1CA5B Bulk 288
    • 1 -
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    • 100 -
    • 1000 $91.02375
    • 10000 $91.02375
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    Mouser Electronics FCCG125SD1CA5B
    • 1 -
    • 10 -
    • 100 -
    • 1000 $105.17
    • 10000 $105.17
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    CA5B Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    A13B1

    Abstract: No abstract text available
    Text: 1 1234455678 96ABCADEFCC1C3C66C 1 131C7BA1C C C C C C C 13C9A1C 1 CDE33AAF1116511C11551 !61"F#$11#%71 1 #&11&11C12&6!'&1 ' !1!155(1&&11 !51 !61'51!*11)!571#&51C1! 137E+,11(151'51 1


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    PDF 96ABCADEF CDE33AAF 137-E+ 01C3B2 1399F+ A13B1

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    Abstract: No abstract text available
    Text: 1 1234456789 1 ABCDEF18DD1DF7CD3FD77D 1 1D31FD811 1 1 1 1 1 1DFF3DA11 CD51 EF3381 1 1 1 51 561 1  !1 " CD1 !1 D1 1 ,E1 2%D6-#D1 -&%1 %1 55&%1 D#D1


    Original
    PDF ABCDEF18D D5101 5251D 51C41 D5165

    TMS34061FNL

    Abstract: lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625
    Text: SM J 3 4 0 1 0 GRAPHICS SYSTEM PROCESSOR NOVEMBER 1 98 8 - • Military Temperature . . . - 5 5 ° C to 12 5°C • Instruction Cycle Time: 200 ns . . . S M J3 4010-40 160 ns . . . S M J3 4010-50 REVISED SEPTEMBER 1989 GB PACKAGE 68-PIN GRID ARRAY TOP VIEW


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    PDF 32-Bit 128-Megabyte 16-Bit 64-Bit 256-Byte TMS34061FNL lad1-5v TMS34070NL S3406 TL 413 SPVU001 MJ340 TA2625

    s - ck5t

    Abstract: CA52
    Text: Preliminary KMM5321200BW/BWG DRAM MODULE KMM5321200BW/BWG Fast Page Mode 1Mx32 DRAM SIM M , 1K Refresh, 5V, using 1Mx16 DRAM GENERAL DESCRIPTION FEATURES The Samsung KMM5321200BW is a 1M bit x 32 Dynam ic RAM high density m em ory module. The • Part Identification


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    PDF KMM5321200BW/B KMM5321200BW/BWG 1Mx32 1Mx16 KMM5321200BW 42-pin 72-pin s - ck5t CA52

    Untitled

    Abstract: No abstract text available
    Text: «HYUNDAI H Y 5 1 1 7 1 O O A S e r ie s 1 6 M x 1 - b it CM O S DRAM DESCRIPTION The HY5117100A is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. The HY5117100A utilizes Hyundai's CMOS silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5117100A HY5117100A HY5117100Ato tRASI13) 1RP02) 1AD20-10-MAY94 HY51171OOA HY5117100AJ

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    Abstract: No abstract text available
    Text: •HY U ND A I HYM572A414A F-Series Unbuffered 4M x 72-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION T ie HYM572A414A is a 4M x 72-bit EDO mode CMOS DRAM module consisting of eighteen HY5117804B in 28/28 SOJ or TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1nF and 0.01 ^F


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    PDF HYM572A414A 72-bit HY5117804B HYM572A414AFG/ATFG/ASLFG/ASLTFG -0004gOQ 4b750flfl D005fl51 1EC07-10-JAN96

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    Abstract: No abstract text available
    Text: ^HYUNDAI HYM564224A R-Series Unbuffered 2M x 64-bit CMOS DRAM MODULE _ with EXTENDED DATA OUT DESCRIPTION The HYM564224A is a 2M x 64-bit EDO mode CMOS DRAM module consisting of eight HY5118164B in 42/42 pin SOJ or 44/50 pin TSOP-II and one 2048 bit EEPROM on a 168 pin glass-epoxy printed circuit board. 0.1 ¡aF and


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    PDF HYM564224A 64-bit HY5118164B HYM564224ARG/ATRG/ASLRG/ASLTRG 22SI5 Mb750flfl 1CE16-10-APR96

    KM44C4104bk

    Abstract: cd-rom circuit diagram
    Text: K M 4 4 C 4 10 4 B K CMOS D R A M ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power


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    PDF KM44C4 KM44C4104BK 7Tbm42 0034bb2 KM44C4104bk cd-rom circuit diagram

    Untitled

    Abstract: No abstract text available
    Text: - PRELIMINARY - February 1996 Edition 1.0 FUJITSU P R O D U C T PR O F IL E S H E E T MB81V4405C-60/-70 CMOS 1 M X 4 BIT HYPER PAGE MODE DRAM CMOS 1,048,576 x 4 bit Hyper Page Mode Dynamic RAM The Fujitsu MB81V4405C is a fully decoded CMOS Dynamic RAM DRAM that contains 4,194,304


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    PDF MB81V4405C-60/-70 MB81V4405C 024-bits MB81V4405C-60 MB81V4405C-70 26-LEAD FPT-26P-M01) F26001S-3C-3

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    Abstract: No abstract text available
    Text: FUJITSU MICROELECTRONICS 7Û 3749762 FUJITSU MICROELECTRONICS D e | 374c17t,a 0003Gb3 □ |' 78C 03063 FUJITSU M OS M em ories • MB85204-10, MB85204-12, MB85204-15 262,144 x 4-Bit Dynamic Random Access Memory SIP Module Description The Fujitsu MB85204 is a fully decoded, 262,144 word X 4-bit


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    PDF 0003Gb3 MB85204-10, MB85204-12, MB85204-15 MB85204 MB81256 18-pad 24-pin 0D03077

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    Abstract: No abstract text available
    Text: |U |IC=RO N 2 MEG DRAM MODULE X MT18D236 36 DRAM MODULE 2 MEG x 36 DRAM FAST PAGE MODE FEATURES • Common RAS control per side pinout in a 72-pin single-in-line package • High-performance, CMOS silicon-gate process. • Single 5V ±10% power supply • All device pins are fully TTL compatible


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    PDF MT18D236 72-pin 052mW 024-cycle 72-Pin T18D236M MT180236

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    Abstract: No abstract text available
    Text: MICRON TECHNOLOGY INC SSE D • b 1 1 1 5 4 =5 O O O S l b ? TE7 ■ MRN MT24D88C240 2 MEG x 40, 4 MEG x 20 1C DRAM CARD 1C DRAM CARD 8 MEGABYTES 2 MEG x 40, 4 MEG x 20 PIN ASSIGNMENT End View 88-Pin Card (U-1) • JEIDA, JEDEC and PCMCIA standard 88-pin IC


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    PDF MT24D88C240 88-Pin X16/18/20 x32/36/40

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    Abstract: No abstract text available
    Text: M I CR ON T E C H N O L O G Y INC 5SE ]> bl 1 1 S 4 e} OQOMfcjfl? 332 MICRON • 4 MEG TtCHNOLOGV INC DRAM MODULE X 8 IURN MT8D48 DRAM MODULE 4 MEG X 8 DRAM FAST PAGE MODE MT8D48 LOW POWER, EXTENDED REFRESH (MT8D48 L) FEATURES • Industry standard pinout in a 30-pin single-in-line


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    PDF MT8D48 MT8D48) MT8D48 30-pin 800mW 024-cycle 128ms A0-A10

    Untitled

    Abstract: No abstract text available
    Text: MT4C4004J 1 MEG X 4 DRAM M IC R O N DRAM 1 MEG x 4 DRAM FEATURES _ • Four independent CAS controls, allowing individual manipulation to each of the four data Input/Output ports DQ1 through DQ4 . • Offers a single chip solution to byte level parity for 36bit words when using 1 Meg x 4 DRAMs for memory


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    PDF MT4C4004J 36bit 225mW 024-cycle 4004JD

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    Abstract: No abstract text available
    Text: M IC R O N □ P A M _ _ _ _ . . . 512K MT16D51232 32. 1 MEG x 16 DRAM MODULE X 5 1 2 K _ x 3 2 > 1 M E G x 16 FAST PAGE MODE (MT16D51232 LOW POWER, EXTENDED REFRESH (MT16D51232 L) MODULE IV IV /U U I.L . FEATURES PIN ASSIGNMENT (Top View) OPTIONS 72-Pin SIMM


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    PDF MT16D51232 MT16D51232) MT16D51232 72-Pin Power/64ms MT1BD51232

    Untitled

    Abstract: No abstract text available
    Text: MT10D25640 256K X 40 DRAM MODULE |U |IC = R O N 256K x 40 DRAM FAST PAGE MODE MT10D25640 LOW POWER, EXTENDED REFRESH (MT10D25640 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.


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    PDF MT10D25640 MT10D25640) MT10D25640 72-pin 750mW 512-cycle T10D25640G CYCLE22

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N MT8C8024 DRAM MODULE 1MEG x 8 DRAM FAST PAGE MODE PIN ASSIGNMENT (Top View OPTIONS Vcc CÄ5 DQ1 A0 A1 DQ2 A2 A3 Vss DQ3 A4 A5 DQ4 A6 A7 DQ5 A8 A9 NC DQ6 W Vss DQ7 NC DQ8 NC raS NC NC Vcc MARKING • Tim ing 80ns access 100ns access 120ns access


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    PDF MT8C8024 100ns 120ns 30-pin MT8C8024

    Untitled

    Abstract: No abstract text available
    Text: ADVANCE MT4 L C1M16CX S 1 MEG X 16 DRAM IURN blllSHT I3004b21 4HT p ilC R O N MICRON TECHNOLOGY INC SSE » DRAM X 1 6 D R A M m 1 M E G 5.0V SELF REFRESH (MT4C1M16CX S) 3.0/3.3V, SELF REFRESH (MT4LC1M16CX S) FEATURES PIN ASSIGNMENT (Top View) • Self Refresh, ie "Sleep Mode"


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    PDF C1M16CX I3004b21 MT4C1M16CX MT4LC1M16CX MT4C1M16C3/5 C1M16CXS 0004b44

    Untitled

    Abstract: No abstract text available
    Text: MICRON 256K DRAM MT4C4258 X 4 DRAM 256K X 4 DRAM DRAM STATIC COLUMN FEATURES • Industry standard x4 pinout, timing, functions and packages • High-performance, CMOS silicon-gate process • Single +5V +10% power supply • Low power, 3mW standby; 175mW active, typical


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    PDF MT4C4258 175mW 512-cycle 20-Pin 100ns

    Untitled

    Abstract: No abstract text available
    Text: M IC R O N 512K 512K X MT20D51240 40 DRAM MODULE 40 DRAM FAST PAGE MODE MT20D51240 LOW POWER, EXTENDED REFRESH (MT20D51240 L) FEATURES • • • • • • • • • PIN ASSIGNMENT (Top View) 72-pin single-in-line package High-performance, CMOS silicon-gate process.


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    PDF MT20D51240 MT20D51240) MT20D51240 72-pin 780mW 512-cycle T20D51240G

    Untitled

    Abstract: No abstract text available
    Text: blllSM'ì 0004371 2E2 B U R N SSE D MICRON TECHNOLOGY INC ADVANCE ic n o N MT4C8512/3 5 1 2 K x 8 DRAM DRAM 512K x 8 DRAM FAST PAGE M O D E • Industry standard x8 pinouts, timing, functions and packages • Address entry: 10 row addresses, nine column addresses


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    PDF MT4C8512/3 350mW 024-cycle MT4C8513 28-Pin blllS41

    Untitled

    Abstract: No abstract text available
    Text: KM44V16000AS CMOS D R AM ELECTRONICS 1 6 M x 4 B i t CMOS Dynamic RAM with Fast Page Mode DESCRIPTION This is a family of 16,777,216 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Refresh cyde 4K Ref. or 8K Ref. , access time(-5, -6,


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    PDF KM44V16000AS 16Mx4

    KM44C4100BK

    Abstract: No abstract text available
    Text: KM4 4 C 4 1 OOB K CMOS D R AM ELECTRONICS 4 M X 4 Bit C M O S Dynamic H A M with Fast Page M ode DESCRIPTION This is a family of 4,194,304 x 4 bit Fast Page Mode CMOS DRAMs. Fast Page Mode offers high speed random access of memory cells within the same row. Power supply voltage +5.0V or +3.3V , refresh cycle


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    PDF 16Mx4, 512Kx8) KM44C4100BK KM44C4100BK

    Untitled

    Abstract: No abstract text available
    Text: KM44V41OOA/AL/ALL/ASL CMOS DRAM 4M x 4 Bit CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION T h e S a m s u n g K M 4 4V 41 O O A /A L /A L L /A S L is a h ig h s p e e d C M O S 4 ,1 9 4 ,3 0 4 b i t x 4 D y n a m ic R a n d o m • Performance range:


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    PDF KM44V41OOA/AL/ALL/ASL 110ns 130ns 150ns KM44V41 24-LEAD 300MIL) 300MIL, D0n43b