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    BUZ54

    Abstract: No abstract text available
    Text: P o w e r M O S t r a n s i s t o r _B U Z 5 4 _ N AMER PHILIPS/DISCRETE ^ ObE D • ^53=131 D014717 5 ■ ^ J - 3 1 -1 3 Jul y 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a


    OCR Scan     		PDF BUZ54 bhS3T31 D014717 JBUZ54 T-39-13 BUZ54

    D1407

    Abstract: BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406
    Text: BUZ54 PowerMOS transistor N AMER PH IL IP S/ DISCR ET E — QbE D — — • ^53=131 D014717 5 7 31-13 ~ — - July 1987 QUICK REFERENCE DATA PARAMETER sym bo l Drain-source voltage VDS Drain current d.c. Id Total power dissipation Ptot Drain-source on-state resistance


    OCR Scan     		PDF BUZ54_ bfa53131 BUZ54 T-39-13 D1407 BUZ54 t03 package transistor pin dimensions MC 140 transistor 2sc406

    D01471

    Abstract: No abstract text available
    Text: SAMSUNG ELECTRONICS INC b 4 E ]> • TTbMlME DDIMTOT 154 KM M536256W/WG SflfiK DRAM MODULES 256Kx36 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KMM536256W is a 256K b it x 36 Dynam­ ic RAM high d e n sity m em ory m odule. The Sam sung


    OCR Scan     		PDF M536256W/WG 256Kx36 KMM536256W M536256W 40-pin 72-pin 22fiF KMM536256W-7 130ns KMM536256W-8 D01471