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    BD941F Search Results

    BD941F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD941F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD941F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF
    BD941F Philips Semiconductors Silicon Epitaxial Power Transistors Scan PDF

    BD941F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BD941F

    Abstract: No abstract text available
    Text: SavantIC Semiconductor Product Specification BD941F Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to


    Original     		PDF BD941F O-220F O-220F) BD941F

    THINKI transistor catalog

    Abstract: audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747
    Text: THINKI TRANSISTOR CATALOG Power Transistors For Audio Power Amplifier PC IC Vceo W (A) (V) Model Vcbo Vebo (V) (V) Vce(sat) hFE fT (V) VCE(V) IC(A) max IC(A) (MHz) Package Function TYP IB(A) 1 -0.05 -150 2SA914 -150 -5 90-450 -5 -0.01 -1 -0.03 -0.003


    Original     		PDF 2SA914 O-126 2SA900 2SC2556 2SC2556A LM317K O-220 LM317T THINKI transistor catalog audio amplifier ic bd249c catalog AUDIO HIGH POWER AMPLIFIER 3DD301 2sc3229 2SA747

    Untitled

    Abstract: No abstract text available
    Text: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F BD934F, BD936F, BD938F, BD940F BD942F.

    Untitled

    Abstract: No abstract text available
    Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,

    transistor BD939F

    Abstract: d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F
    Text: BD933F; BD935F BD937F; BD939F BD941F PHILIPS INTE RNATIONAL SbE D • TllüûSb 00M3052 S^E ■ P H I N SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SO T186 envelope w ith an electrically insulated mounting base, intended fo r use in audio o utpu t stages and fo r general purpose am plifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F Q0M3052 OT186 BD934F, BD936F, BD938F, transistor BD939F d941 935F b0933 939f 939-F BD-939F 937f BD941F BD939F

    BD939F

    Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
    Text: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F- BD934F, BD936F, BD938F, BD940F BD942F. BD939F 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    936F

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BD940F BD942F PHILIPS INTERNATIONAL SbE D • 7110ÔEL 0 D 4 3 0 b 4 SGM « P H I N “ SILICON EPITAXIAL POWER TRANSISTORS T -5 J - PNP Silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F 936F

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    BD936F

    Abstract: BD938F 942F BD933F BD934F BD935F BD937F BD939F BD940F BD941F
    Text: I _ PHILIPS INTERNATIONAL 5bE D BD934F; BD936F BD938F; BD940F BD942F_ 711002b 00430bH SOM M P H I N m SILICON EPITAXIAL POWER TRANSISTORS T -3 3 - 7 PNP silicon power transistor in a SOT186 envelope w ith an electrically insulated mounting base,


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F BD936F BD938F 942F BD933F BD934F BD935F BD937F BD940F BD941F

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    3BS transistor

    Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
    Text: BD933F; BD935F BD937F; BD939F _ _ _ BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F 711002b 0043G52 OT186 BD934F, BD936F, 3BS transistor BD937F b0933 935F BD935 d941 BD933F BD934F

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G