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    BD938F Search Results

    BD938F Datasheets (3)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BD938F Philips Semiconductors Silicon Epitaxial Power Transistors Original PDF
    BD938F Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    BD938F Unknown Shortform Data and Cross References (Misc Datasheets) Short Form PDF

    BD938F Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    BUV48I

    Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
    Text: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable


    Original     		PDF 2N3016 2N3021 2N3022 2N3023 2N3024 2N3025 2N3026 2N3055 2N3076 2N3171 BUV48I BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046

    B0938

    Abstract: B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F BD939F
    Text: BD934F; BD936F BD938F; BD940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP Silicon power transistor in a SOT 186 envelope with an electrically insulated mounting base, intended for use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F BD933F, BD935F, BD937F, BD939F B0941F. B0938 B0942 B0941 BD933F BD934F BD935F BD936F BD937F BD938F

    Untitled

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BO940F BD942F SILICON EPITAXIAL POWER TRANSISTORS PNP silicon power transistor in a S0T186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BO940F BD942F S0T186 BD933F, BD935F, BD937F, BD939F

    936F

    Abstract: No abstract text available
    Text: BD934F; BD936F BD938F; BD940F BD942F PHILIPS INTERNATIONAL SbE D • 7110ÔEL 0 D 4 3 0 b 4 SGM « P H I N “ SILICON EPITAXIAL POWER TRANSISTORS T -5 J - PNP Silicon power transistor in a SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F 936F

    BD936F

    Abstract: BD938F 942F BD933F BD934F BD935F BD937F BD939F BD940F BD941F
    Text: I _ PHILIPS INTERNATIONAL 5bE D BD934F; BD936F BD938F; BD940F BD942F_ 711002b 00430bH SOM M P H I N m SILICON EPITAXIAL POWER TRANSISTORS T -3 3 - 7 PNP silicon power transistor in a SOT186 envelope w ith an electrically insulated mounting base,


    OCR Scan     		PDF BD934F; BD936F BD938F; BD940F BD942F OT186 BD933F, BD935F, BD937F, BD939F BD936F BD938F 942F BD933F BD934F BD935F BD937F BD940F BD941F

    Untitled

    Abstract: No abstract text available
    Text: BD933F; BD935F BD937F; BD939F BD941F J SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F BD934F, BD936F, BD938F, BD940F BD942F.

    BPW22A

    Abstract: cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8
    Text: Contents Page Page New product index Combined index and status codes viii x Mullard approved components BS9000, CECC, and D3007 lists CV list Integrated circuits Section index xliii 1 5 Standard functions LOGIC FAMILIES CMOS HE4000B family specifications CMOS HE4000B family survey


    OCR Scan     		PDF BS9000, D3007 HE4000B 80RIBUTION BS9000 BPW22A cm .02m z5u 1kv pin configuration of BFW10 la4347 B2X84 TDA3653 equivalent TRIAC TAG 9322 HEF40106BP equivalent fx4054 core dsq8

    transistor f6 13003

    Abstract: equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350
    Text: W IDEBAND TRANSISTORS AND W IDEBAND HYBR ID 1C MODULES page P refa ce. 3 Selection guide Wideband transistors.


    OCR Scan     		PDF SC08b transistor f6 13003 equivalent transistor bj 131-6 transistor Eb 13003 BM BB112 smd TRANSISTOR code marking 2F 6n a1211 lg CQY58 BU705 TRANSISTOR 131-6 BJ 026 philips om350

    Untitled

    Abstract: No abstract text available
    Text: ! BBS33F; 3D93Sf ' BD937F; BD939F BD941F _ 711002b 01343052 3=12 H P H I N - PHILIPS INTERNATIONAL SbE D • SILICON EPITAXIAL POWER TRANSISTORS T -J 3 -0 T NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base, intended fo r use in audio output stages and fo r general purpose amplifier applications.


    OCR Scan     		PDF BBS33F; 3D93Sf BD937F; BD939F BD941F 711002b OT186 BD934F, BD936F, BD938F,

    BGY41

    Abstract: BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc
    Text: SMALL-SIGNAL FIELD-EFFECT TRANSISTORS page Selection guide N-channel junction field-effect transistors general purpose. for differential am plifiers.


    OCR Scan     		PDF LCD01 BGY41 BFW10 FET transistor CQY58 germanium RX101 equivalent components FET BFW10 bd643 bf199 283 to92 600a transistor zener phc

    FET BFW10

    Abstract: KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11
    Text: INDEX _ INDEX OF TYPE NUM BERS The inclusion of a type number in this publication does not necessarily imply its availability. Type no. book section Type no. book section Type no. book section BA220 BA221 BA223 BA281 BA314 SCOI SCOI SCOI SCOI


    OCR Scan     		PDF BA220 BA221 BA223 BA281 BA314 BA315 BA316 BA317 BA318 BA423 FET BFW10 KP101A FET BFW11 BDX38 KPZ20G CQY58A BFW10 FET RPW100 B0943 OF FET BFW11

    3BS transistor

    Abstract: BD937F b0933 BD935F BD939F 935F BD935 d941 BD933F BD934F
    Text: BD933F; BD935F BD937F; BD939F _ _ _ _BD941F _ PHILIPS I N T E R N A T I O N A L SbE D m 711002b 0043G52 3=12 « P H I N -SILICON EPITAXIAL POWER TRANSISTORS 7^ -J 3 ~ ô '7 ' NPN silicon power transistor ina SOT186 envelope with an electrically insulated mounting base,


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F 711002b 0043G52 OT186 BD934F, BD936F, 3BS transistor BD937F b0933 935F BD935 d941 BD933F BD934F

    TXD10K40

    Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
    Text: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40


    OCR Scan     		PDF bbS3131 BLU52 1N321 BYW56 1N321A BLV97 1N322 TXD10K40 TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G

    BD939F

    Abstract: 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F BD940F
    Text: BD933F; BD935F BD937F; BD939F BD941F SILICON EPITAXIAL POWER TRANSISTORS NPN silicon power transistor in a SOT 186 envelope w ith an electrically insulated mounting base, intended fo r use in audio output stages and for general purpose amplifier applications.


    OCR Scan     		PDF BD933F; BD935F BD937F; BD939F BD941F- BD934F, BD936F, BD938F, BD940F BD942F. BD939F 941f BD936F 935F BD933F BD934F BD935F BD937F BD938F