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    Nanmac A4A-K-2-2-PK

    SITCK ON T/C K,72" L,10/PACK
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    DigiKey A4A-K-2-2-PK Ammo Pack 1
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    Aimtec AMA24AK2-240075Y

    Pcs/Box |Aimtec AMA24AK2-240075Y
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    Newark AMA24AK2-240075Y Bulk 120
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    Pizzato Elettrica Srl FR 874-AK22

    Rope safety switch without reset for simple stop | Pizzato USA FR 874-AK22
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    RS FR 874-AK22 Bulk 8 Weeks 1
    • 1 $35.1
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    4AK22 Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    4AK22 Hitachi Semiconductor FET Arrays Original PDF
    4AK22 Hitachi Semiconductor Silicon N-Channel Power MOSFET Array Original PDF
    4AK22 Renesas Technology Silicon N-Channel Power MOS FET Array Original PDF
    4AK22 Hitachi Semiconductor Power Transistors Data Book Scan PDF
    4AK22 Unknown FET Data Book Scan PDF
    4AK22 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    4AK22 Unknown Catalog Scans - Shortform Datasheet Scan PDF
    4AK22-E Renesas Technology MOSFET: Enhancement Mode: N Channel: SIP: 10-Pin Original PDF

    4AK22 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Hitachi motor driver

    Abstract: 2SK1254 4AK22 SP-10 Hitachi discrete DSA003638
    Text: 4AK22 Silicon N-Channel Power MOS FET Array ADE-208-1206 Z 1st. Edition Mar. 2001 Application High speed power switching Features • Low on-resistance R DS(on) 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive


    Original     		PDF 4AK22 ADE-208-1206 2SK1254 SP-10 Hitachi motor driver 4AK22 SP-10 Hitachi discrete DSA003638

    2SK1254

    Abstract: 4AK22 SP-10 Hitachi DSA00397
    Text: 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on 0.4 , VGS = 10 V, I D = 1.5 A R DS(on) 0.55 , VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current • High speed switching


    Original     		PDF 4AK22 2SK1254 SP-10 4AK22 SP-10 Hitachi DSA00397

    Hitachi DSA002759

    Abstract: No abstract text available
    Text: 4AK22 Silicon N-Channel Power MOS FET Array Application High speed power switching Features • Low on-resistance R DS on ≤ 0.4 Ω, VGS = 10 V, I D = 1.5 A R DS(on) ≤ 0.55 Ω, VGS = 4 V, I D = 1.5 A • Capable of 4 V gate drive • Low drive current


    Original     		PDF 4AK22 2SK1254 Hitachi DSA002759

    Hitachi DSA002751

    Abstract: No abstract text available
    Text: 4AK22 Silicon N-Channel Power MOS FET Array November 1996 Application High speed power switching Features • Low on-resistance RDS on ≤ 0.4 ≤, VGS = 10 V, ID = 1.5 A RDS(on) ≤ 0.55 ≤, VGS = 4 V, ID = 1.5 A • Capable of 4 V gate drive • Low drive current


    Original     		PDF 4AK22 2SK1254 SP-10 D-85622 Hitachi DSA002751

    2sk125

    Abstract: 2SK1254 4AK22 SP-10
    Text: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF

    2sk 4207

    Abstract: 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 2sk 4207 2SK176 2SK975 equivalent 2SJ177 2SJ318 PM45502C 2SK2225 2sk1058 2SJ162 pwm 100w audio amplifier 2SK1336 equivalent

    7054F

    Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
    Text: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver


    Original     		PDF 2sc4537 2sc454. 2sc4591 2sc4592 2sc4593 2sc460. 2sc4628 2sc4629 2sc4643 2sc4680 7054F BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557

    1002ds

    Abstract: 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj
    Text: 2004.1 Renesas Transistors/Thyristors/Triacs Status List Topic—High Frequency Silicon Bipolar Transistor "2SC5998" •············································································ 2


    Original     		PDF 2SC5998" C5139 2SC5247 2SC5907 2SD1504 2SJ361 2SK439 2SK494 2SK3349 BCR5KM-12L 1002ds 6020v4 TRANSISTOR BJ 131-6 2SC 8550 transistor 2sc1417 HITACHI 08122B transistor h945 6030v4 2SC 8050 25aaj

    2SK2225

    Abstract: 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent
    Text: CONTENTS • Index. 4 ■ General Information.


    Original     		PDF PM50150K 31Max 2SK2225 2sj150 2sk1058 2SK215 equivalent 2sk135 application note 2SK975 equivalent 2SK2416 2sk135 audio application 2SK135 audio amplifier 2SK2225 equivalent

    lvc16244

    Abstract: BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP
    Text: HITACHI ELECTRONIC COMPONENTS DATABOOK 2003 INDEX General Informations Multi Perpose Products Safety Considerations Hitachi Semiconductor Package Databook HITACHI Sales Locations Diodes Microcontroller Microcontroller General Microcontroller Overview List


    Original     		PDF HD49323A HA12134A HA12141N HA12155N HA12163 HA12167F HA12173 HA12179F HA12181F HA12187F lvc16244 BC240 2sk3174 CBT1G125 LV2GT14A HC32 Hitachi HA13557A transistor 2SC1162 H8 hitachi programming manual 30204SP

    hitachi j50

    Abstract: 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent
    Text: CONTENTS Index . 5 General Information . 9


    Original     		PDF D-85622 hitachi j50 2SK1168 HA16116 "cross reference" TRANSISTOR MARKING YB 826 ADE-408 GG 84 MARKING CODE N-CHANNEL MOS FIELD EFFECT TRANSISTOR 2sk1058 2SJ162 2sj177 2SJ182 equivalent

    Untitled

    Abstract: No abstract text available
    Text: 4AK22 Silicon N-Channel Power MOS FET Array HITACHI Application High speed power switching Features • Low on-resistance Rds«*, - 0-4 £2, Vos = 10 V, ID= 1.5 A RDS on)<0.55 a VGS = 4 V, ID= 1.5 A • Capable of 4 V gate drive • Low drive current •


    OCR Scan     		PDF 4AK22 2SK1254 SP-10

    2SK125

    Abstract: 2SK1254 4AK22 SP-10
    Text: HITACHI 4AK22 SILICO N N -C H A N N E L PO W ER M OS FET ARRAY HIGH S P E E D P O W E R SW ITC H IN G • FEATURES • Low On-Resistance R ds on 0.4 Cl , VQS = 10 V, l0 = 1,5 A R 0$ (on) 0.55 i ì , V = 4 V , LLJ = 1.5 A • Capable of 4 V Gate Drive • Low Drive Current


    OCR Scan     		PDF 4AK22 2SK1254 2SK1254 SP-10) 2SK1254Â 2SK1254( 2SK125 4AK22 SP-10

    2SK1275

    Abstract: 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1202 2SK1203 2SK1204 2SK696 2SK1275 4AM14 6am12 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16

    APC UPS es 500 CIRCUIT DIAGRAM

    Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
    Text: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.


    OCR Scan     		PDF ADE-408 50502C APC UPS es 500 CIRCUIT DIAGRAM sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212

    FHX04FA

    Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
    Text: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop


    OCR Scan     		PDF 3SK38 3SK38A 3SK71 4AK15 4AK16 4AK17 60/115nstyp 2SK971/2SJ173 6AM13 CXD7500M FHX04FA FHR10X 3SK38 FHR01FH FHX05FA NEC 2501L

    2SK975 equivalent

    Abstract: k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44
    Text: Section 1 Lineup by Application 1.1 Power Supply Use 1 R ecom m ended products in each pow er range Recommended Products in Each Power Range Type power supply Voltage Up to 1 0 W 10 W tO 30 W 30 W to 50 W 50 W to 100 W 100 W to 200 W 200 W 100 V to 132 V AC


    OCR Scan     		PDF 2SK1151 2SK1152 2SK1862 2SK1863 2SK1155 2SK1157 2SK1313 2SK1314 2SK1540 2SK1541 2SK975 equivalent k2796 equivalent transistor 2sk POWER MOS FET 2sj 2sk .model 2SK216 TRANSISTOR 2SK 1180 SK1626 2SK215 equivalent DRUM DRIVER 2sj44

    2sk1058 equivalent

    Abstract: MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297
    Text: JfHITACHI POWER TRANSISTORS 1 Contents Page 1. discrete and module devices New Degree of Freedom Hitachi's Power Transistors cover all field applications ranging from low to high frequ encies, also su itab le for fullautomated assembly processes such as surface-mount devices eg. UPAK, MPAK,


    OCR Scan     		PDF O220F SP-10 SP-12 SP-12TA 1560D 2sk1058 equivalent MBM300BS6 Hitachi MOSFET 2SK1270 transistor 2sk 12 2sk1645 2SK975 equivalent equivalent transistor 2sk 2SK1058 MOSFET APPLICATION NOTES 2SC297

    2SK1778

    Abstract: 2SK971 2SK970 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17 4AK18
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1665 2SJ215 2SJ217 2SK1303 2SK1778 2SK971 2SK970 2SK972 2SK973 2SK975 4AK16 4AK17 4AK18

    2SH14

    Abstract: 2SH21 2SH11 2SH19 2SK1056 6AM13 4AK19
    Text: POWER MOS FET •G eneral amplifier Package code Type No. -tas 2SK1197 TO-3P 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 to Ratings Vos* j 10 Vosx (V)| «A) 100 1 0.5 -7 -120 -7 -140 -7 -160 -8 -180 -200 ! -8 Characteristics Mai ResfO» Ciss Status (S itili. <PF)«W>


    OCR Scan     		PDF 2SK1197 2SJ160 2SJ161 2SJ162 2SJ351 2SJ352 2SK1056 2SK1087 2SK1058 2SK2220 2SH14 2SH21 2SH11 2SH19 6AM13 4AK19

    Untitled

    Abstract: No abstract text available
    Text: HH'lbSüS 0013715 Ö23 • H I T 4 4 A K 2 2 HI T A C H I / OPTOELECTRONICS blE » SILICON N-CHANNEL POWER MOS FET ARRAY HIGH SPEED POWER SWITCHING ■ FEATURES • Low On-Resistance Rds (on) ^ 0.4 f l , , = 10 V, l0 = 1.5 A Rm (on) ^ 0.55 £2 = 4 V, lD= 1.5 A


    OCR Scan     		PDF 2SK1254 2SK1254

    HITACHI Power MOSFET Arrays

    Abstract: 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973 4AK15
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 HITACHI Power MOSFET Arrays 2sk1299 2SK975 2sk1306 2SK1919 2SK970 2SK971 2SK972 2SK973

    6AM12

    Abstract: SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1 4AK15
    Text: 14 HITACHI 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully moulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 SP-12 6AM11 2SK970 6AM12 SP12TA 2sk970 SP12 PACKAGE TYPE 6 2SK971 4AK16 2SK972 2SK973 2SK97-1

    2SK1254

    Abstract: 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK15 4AK16 4AK17
    Text: HITACHI 14 1.6 Power MOSFET Arrays For the ultimate in high density packaging, Hitachi produces both fully m oulded 10-pin SIL array containing 4 logic level DUI-Series MOSFETs and in condensed 12-pin SIL array containing 6 logic level Dm-Series MOSFETs. These are very suitable for full bridge switching


    OCR Scan     		PDF 10-pin 12-pin 4AK17 2SK972 4AK15 2SK971 2SK1254 2sj177 2SK970 2SK971 2SK972 2SK973 2SK975 4AK16 4AK17